The invention discloses a vertical monomolecular film
field effect transistor based on a two-dimensional laminated heterostructure and a preparation method of the vertical monomolecular film
field effect transistor, and belongs to the field of
new materials and molecular
field effect transistors. The vertical monomolecular film
field effect transistor is composed of the two-dimensional material template layer, the ultra-flat
metal electrode, a two-dimensional material insulating support layer, a self-assembled monomolecular film, a two-dimensional material drain terminal
electrode, an insulating two-dimensional material
dielectric layer and a conductive two-dimensional material gate
electrode layer. According to the invention, a novel two-dimensional material is adopted to replace the gridand
dielectric layer materials in a traditional
field effect transistor, a two-dimensional material insulating layer is introduced to accurately control the atomic-scale thickness of the electrode spacing, and the two-dimensional material
thin layer is introduced to improve the flatness of the
metal electrode, so that the device achieves the atomic-scale flatness and controllable atomic
layer thickness; the vertical molecular
field effect transistor which has
room temperature stability, is regulated and controlled by the
solid-state grid and is provided with the ultra-flat
metal electrode isrealized, and the stability of the device and the possibility of large-scale integration are greatly improved.