The invention discloses a preparation method of a
crystalline silicon solar cell. In the
passivation process technology of the back surface of a
silicon wafer, because aluminum
oxide has constant
negative charge, the composition of the back surface can be lowered, and the same time, because
silicon nitride in rich in
hydrogen,
passivation can be realized effectively, and in addition, the
passivation overlapping
layers of aluminum
oxide and
silicon nitride act as a
back reflector, the absorption of long beam
waves can be improved greatly, the passivation overlapping
layers are positioned between a back
surface electrode and the silicon
wafer, the warping degree of the
crystalline silicon solar cell can be lowered greatly, and the influence on the lifetime of a minority carrier in the silicon
wafer can be lowered effectively; and when the back
surface electrode is manufactured, because the passivation overlapping
layers for the
corrosion depth in the
corrosion region is just removed, the problem that the back
surface electrode and the silicon wafer have less possibility of forming favorable
ohmic contact due to the back surface passivation of the silicon wafer can be solved effectively, at the same time, a dense
network structure is formed by connecting all the adjacent electric conducting materials by utilizing a silver wire, and the
network structure is especially favorable for the collection and conduction of back surface current carriers of the silicon wafer.