47results about How to "Meet different performance needs" patented technology

The invention provides a method for preparing a SiCp enhanced AZ91D composite material blank. The method comprises the following steps of: preparing a high-temperature binding agent; preparing a SiC particle precast block by adopting a wet method; drying and sintering the precast block; and extruding and impregnating to obtain the SiCp enhanced AZ91D composite material blank. The method for preparing the SiCp enhanced AZ91D magnesium-based composite material has the advantages of high automatic degree, stable and efficient process flow, excellent and reliable quality of blank and convenience for realizing scale production.

The invention discloses an application of a hemispherical Luneberg lens antenna, such as the application in satellite communication. The hemispherical Luneberg lens antenna is a hemisphere with radiusR and is designed to include n concentric layers, and the average dielectric constant epsilon(i) of the ith concentric layer is equal to 2-(ri / R)<2>, wherein n is an integer not less than 3, r1 is the radius of the center layer, rn=R, ri is the radius of the ith concentric layer, 1<=i<=n, and a cavity is distributed in at least one of the n concentric layers. The shape, size and distribution of the cavity structure of the hemispherical Luneberg lens antenna are adjustable and controllable. The average dielectric constant of the concentric layers can be precisely controlled. Different design requirements can be met. The hemispherical Luneberg lens antenna has a wide range of application. Moreover, there are a variety of materials which can be used, the production process is simple, the rate of finished products is high, there is no interlayer gap, and the product quality is more stable and reliable.

The invention discloses a super-power limiter MMIC based on bonding transfer and a preparation method thereof. The preparation method comprises: etching a PIN mesa structure and an upper electrode on the front side of a Si wafer; spin coating and adhering the front side of the Si wafer Bond the Si wafer with the front side of the temporary carrier; thin the Si wafer substrate; prepare the lower electrode on the back of the Si wafer; clean the thin layer of the PIN structure supported by the temporary substrate and the completed The SiC substrate prepared by the peripheral circuit; the thin layer of the PIN tube supported by the temporary substrate and the front side of the SiC substrate prepared by the peripheral circuit are bonded and interconnected; the temporary substrate is removed; the etching isolating the PIN mesa; the PIN The structure is interconnected with SiC circuits to obtain an ultra-high power limiter MMIC based on bonding transfer. The invention integrates the high-performance Si PIN limiter into the MMIC to realize the high-integration and high-power limiter MMIC.

Provided is a prop support strap for stage performers. The prop support strap comprises a vertical plate and a box body with an opening in the front side, wherein the box body is positioned in front of the vertical plate and fixedly connected with the vertical plate. A horizontal placing groove is formed in the front side of the vertical plate and positioned above the box body, the inner walls ofthe two sides of the placing groove are movably provided with first screw rods through bearings respectively, the opposite ends of the two first screw rods are fixedly connected through a connecting block, the threads of the two first screw rods are opposite, the inner walls of the upper and lower ends of the placing groove are provided with limiting grooves respectively, each first screw rod is matched with a first nut, and the first screw rods are in threaded fit with the first nuts. According to the prop support strap, adjustment can be carried out according to different shoulder widths ofthe performers, so that the performers feel more comfortable when wearing the prop support strap; moreover, different wings can be replaced according to different performance demands, and the performance demands are met.

A bainite isothermal heat treatment method of medium-carbon silicomanganese nickel-chromium-series low-alloy steel aims to solve a problem that performance requirements of some key components cannot be satisfied since yield strength is significantly low when a temper temperature is lower than an isothermally quenching temperature in a conventional isothermal heat treatment technology. The method includes following steps: performing austenitizing treatment to the medium-carbon silicomanganese nickel-chromium-series low-alloy steel; carrying out isothermal oil-quenching or isothermal gas-quenching at a temperature which is higher than a martensite transformation temperature by 5-60 DEG C with the temperature being maintained for 120-180 min; and performing tempering at a temperature which is higher than an isothermal quenching temperature by 10-60 DEG C for 30-150 min. Through treatment by the method, the medium-carbon silicomanganese nickel-chromium-series low-alloy steel has a tensile strength reaching 1590-1980 MPa, a yield strength reaching 1350-1770 MPa and a ductility being 14-25%.

The invention discloses a manufacturing method of a hemispherical Lunberian lens antenna. The hemispherical Lunberian lens antenna is distributed with cavities, has a hemispherical surface and a bottom plane, and the bottom plane is a plane passing through the center of the sphere; it is characterized in that the Described method comprises the steps: (1) select the material that is used to manufacture hemispherical Lunberg lens antenna; (2) determine the structural parameter of hemispherical Lunberg lens antenna; (3) make the hemispherical Lunberg lens antenna with described structural parameter A three-dimensional digital model; and (4) manufacturing the hemispherical Lunberg lens antenna according to the three-dimensional digital model by using an additive manufacturing method; and (5) pasting a metal foil layer on the bottom plane. The shape, size and distribution of the cavity structure in the hemispherical Lunberg lens antenna produced by the present invention are adjustable and controllable, which realizes the precise control of the average dielectric constant of the concentric layer and can meet different design requirements; and the production materials are widely used , The production process is simple, the yield is high, and there is no gap between layers, which makes the product quality more stable and reliable.

The invention discloses a high-strength and high-toughness heat treatment method of medium-carbon silicon-manganese-chromium-nickel series low alloy steel, relating to a high-strength and high-strength heat treatment method of low alloy steel and aiming at solving the problem that the medium-carbon silicon-manganese-chromium-nickel series low alloy steel treated by a traditional heat treatment process cannot simultaneously obtain excellent strength, ductility and toughness. The high-strength and high-toughness heat treatment method comprises the following steps of: 1, carrying out austenitizing treatment on the medium-carbon silicon-manganese-chromium-nickel series low alloy steel, and then carrying out isothermal quenching to finish primary heat treatment; and 2, carrying out isothermal quenching on the medium-carbon silicon-manganese-chromium-nickel series low alloy steel subjected to the primary heat treatment in the step 1, and finally quenching to room temperature. The medium-carbon silicon-manganese-chromium-nickel series low alloy steel treated by using the method disclosed by the invention has the tensile strength of 1580MPa-2000MPa, the yield strength of 1340MPa-1870MPa, the ductility of 9.0-22.9 percent and the percentage reduction of area of 16.0-43.2 percent. The high-strength and high-toughness heat treatment method can be used for heat treatment of the medium-carbon silicon-manganese-chromium-nickel series low alloy steel.