41results about How to "Increase wavelength" patented technology

A wavelength tunable VCSEL is provided. The wavelength tunable VCSEL includes a current constricting layer which is formed on a lower distributed Bragg reflector, upper and lower electrodes for laser oscillation, and additional electrodes which are formed on a predetermined region of an upper distributed Bragg reflector from which light is emitted so as to vary a width of an effective resonance region. Compared to an existing VCSEL, the wavelength tunable VCSEL can rapidly change a wavelength of emitted light and prevent the deterioration of gain characteristics of laser oscillation due to variations in the width of the effective resonance region according to variations in a temperature. As a result, a wavelength tunable region of emitted laser can be increased.

An optical pickup includes a first optical source producing a first optical beam having a wavelength λ1, a second optical source producing a second optical beam having a wavelength λ2 (λ1<λ2), and a single objective lens focusing any of the first and second optical beams to an optical recording medium, the first optical beam is incident to the objective lens as a parallel beam and the second optical beam is incident to the objective lens as a divergent optical, wherein an aperture is provided at a front side of the objective lens with offset from a principal point at the front side by a distance t given by an equation t=L−NA1·f / tan(asin(NA2obj)), wherein f represents a focal distance of the objective lens, NA1 represents the numerical aperture at the side of the image surface when the first optical source is turned on, NA2obj represents the numerical aperture at the front side when the second optical source is turned on, and L represents the object distance at the time when the second optical source is turned on.

The invention discloses an optical microcavity optical frequency comb generation apparatus and generation method based on injected seed light. The optical microcavity optical frequency comb generation apparatus comprises pumping laser, a first optical amplifier, a first beam splitter, a fiber loop, an optical filter, a binding device and an optical microcaity, wherein an input end of the first amplifier is connected to the pumping laser; an input end of the first beam splitter is connected to an output end of the first optical amplifier; one end of the fiber loop is connected to a second output end of the first beam splitter; an input end of the optical filter is connected to the other end of the fiber loop; a first input end of the binding device is connected to the first output end of the first beam splitter; a second input end of the binding device is connected to an output end of the optical filter; an input end of the optical microcavity is connected to the output end of the binding device; output of the pumping laser is divided into two parts by the first beam splitter after amplification by the first optical amplifier, including pumping light and seed light orderly passing through the fiber loop and the optical filter; and the pumping light and the seed light are injected into the optical microcavity via the binding device, and then optical frequency comb with controllable comb gaps is produced.

The invention discloses a parallelism-adjustable micro-electro-mechanical system Fabry-Perot cavity wavelength tunable filter. The surface of a micro-bridge part is used as an upper electrode of the Fabry-Perot cavity; a grating is located at the center of the surface of the micro-bridge part; the bottommost layer is used as a substrate; a plurality of lower electrodes are distributed below the micro-bridge part in symmetry and in parallel, and respectively fixed on two insulation layers; the two insulation layers cover on the substrate and are used for electrically insulating the plurality of the lower electrodes from the upper electrode; two rectangular holes are formed at two sides of the micro-bridge part; the front cavity surface is located at the lower surface of the bridge surface corresponding to the grating area; the rear cavity surface is located at the upper surface of the substrate which is located below the grating and between the two insulation layers as the rear cavity surface of the Fabry-Perot cavity; and different voltages are applied between the plurality of the lower electrodes and the upper electrode so as to form a complex electrostatic field, so that the movable cavity surface of the Fabry-Perot cavity can be adjusted in appearance while moving downwards, thereby adjusting the parallelism between the front cavity surface and the rear cavity surface of the Fabry-Perot cavity.

The invention relates to a light-emitting device, a display panel and a fabrication method of the light-emitting device. The light-emitting device comprises a transparent electrode, a light-emitting layer, a half-transparent electrode, a micro-cavity adjustment layer and a reflection layer which are sequentially arranged on a substrate, wherein the half-transparent electrode, the micro-cavity adjustment layer and the reflection layer form a micro-cavity adjustment structure. Compared with an existing bottom emission light-emitting device, the light-emitting device has the advantages that the front-surface light giving-out efficiency of the light-emitting device can be effectively improved, and the color domain can be adjusted; and meanwhile, the micro-cavity adjustment structure of the light-emitting device is formed at an outer side of the electrode of the light-emitting device, and no influence on charge transmission and recombination of the light-emitting device during working is generated, and the light-emitting device is simpler and more effective.

The invention discloses a preparation method and application of a carbon quantum dot-based fluorescence sensor with a hexavalent chromium ion detection function, relates to the preparation method andthe application of the carbon quantum dot-based fluorescence sensor and aims at solving the problems that fluorescence carbon quantum dots in an existing method of utilizing fluorescence carbon quantum dots to detect heavy metal has lower emission wavelength and visual fluorescence detection cannot be achieved. The method comprises the steps: 1, dissolving a carbon source into N,N-dimethyl formamide and performing ultrasonic treatment to form an even mixed solution A; 2, pouring the solution A into a reaction kettle and reacting to obtain a solution B; 3, putting the solution B into a centrifugal tube, centrifuging repeatedly and keeping liquid supernatant; 4, dialyzing the liquid supernatant with a dialysis bag to obtain a carbon quantum dot solution, namely the carbon quantum dot-based fluorescence sensor. The emission wavelength of the fluorescence carbon quantum dots prepared by the preparation method can reach 530 to 550 nm, and visual fluorescence detection on heavy metal ions can be achieved. The carbon quantum dot-based fluorescence sensor disclosed by the invention is applied to the field of heavy metal detection.

The invention provides a pre-chirp and SSFS (Soliton Self-Frequency Shift) based wavelength space adjustable double-color soliton pulse light source system which is suitable for the technical field of lasers. The wavelength space adjustable double-color soliton pulse light source system comprises a femtosecond laser, a pre-chirp optical device, a lens and an anomalous dispersion optical fiber along the direction of an optical path; the femtosecond laser is used for generating a first soliton and a second soliton; the energy of the input pulse of the femtosecond laser can be adjusted and the soliton order number N is increased along with the increase of the energy of the input pulse; the pre-chirp optical device is used for adjusting the width of the input pulse to ensure that the wavelength of the first soliton is maintained to be unchanged under the condition that the soliton order number is improved; the adjustment direction on the width of the input pulse is the same as that of the energy of the input pulse of the femtosecond laser. According to the wavelength space adjustable double-color soliton pulse light source system, the wavelength space tuning between the two solitons is based on the basic attribute of soliton components in high-order solitons, namely that the higher the soliton order number N, the closer the peak power and the pulse width of the two solitons, and accordingly the wavelength space between the two solitons after the SSFS is small.

The invention discloses a light-emitting diode epitaxial wafer, a manufacturing method thereof, a light-emitting diode chip manufacturing method, and a substrate recycling method, which belongs to the field of light-emitting diodes. The light-emitting diode epitaxial wafer comprises a GaAs substrate, and a first epitaxial layer growing on the GaAs substrate, wherein the first epitaxial layer comprises an N-type GaAs buffer layer, a first N-type GaXIn1-XP layer, an N-type GaAs layer, an N-type AlAs sacrificial layer, an N-type GaInP etching stop layer, an N-type GaAs ohmic contact layer, an N-type AlInP layer, a quantum well layer and a P-type layer located on the GaAs substrate in sequence, and X is larger than 0.47 but smaller than 0.51. The light-emitting diode epitaxial wafer manufacturing method comprises steps: the GaAs substrate is provided; the first epitaxial layer grows on the GaAs substrate; and the light-emitting diode epitaxial wafer is obtained. According to the embodiment of the invention, the GaAs substrate is stripped from the first epitaxial wafer, the GaAs substrate is not fully damaged, and environmental pollution is reduced; and the stripped GaAs substrate is used for manufacturing the epitaxial wafer again, repeated use of the GaAs substrate is realized, and the cost of the LED epitaxial wafer is greatly reduced.

The invention relates to a wavelength expansion InGaAs detector structure on a GaAs substrate. The cut-off wavelength of the detector prepared by using the structure is greater than 1.7 micrometers but smaller than 3.5 micrometers, aluminum-containing arsenide materials are arranged on the GaAs substrate in an epitaxy way to be used as a buffer layer and a lower contact layer, InGaAs is used as an absorption layer, and in addition, aluminum-containing arsenide materials are adopted to be used as a window layer and an upper contact layer. The detector structure provided by the invention can expand the application range of the InGaAs detector and the array of the InGaAs detector, the GaAs substrate with maturer process and higher quality is adopted, the device cost can be reduced, the influence on the epitaxial layer hidden current caused by the substrate defects is reduced, the quantum efficiency is improved, and wide application prospects are realized.

The present invention discloses a linear polarization light-emitting laser diode having a resonant cavity, comprising a GaN-based LED chip, and a reflector and a plurality of bar-shaped gratings which are respectively arranged at the upper part and the lower part of the GaN-based LED chip, wherein the bar-shaped gratings are distributed successively from the left to the right, and are arranged in parallel. The linear polarization light-emitting laser diode of the present invention has excellent light-emitting efficiency and polarization properties.

The present invention provides a manufacturing method for a titanium ball that improves a deodorizing function, an antibacterial function, an antifouling function, and an air and water purifying function of titanium dioxides so as to allow coating a base material (21, 22) with titanium oxide (23) simply and accurately, which is also a manufacturing method for a titanium ball that sufficiently displays the above-described functions even in a dark place such as a toilet tank, and is characterized by including a step of making titanium oxide powder collide and / or frictionally contact for discoloration.

The invention provides a manufacturing method of a PTFE ceramic modified substrate film for a high-performance circuit board. The PTFE ceramic modified base material film for the high-performance circuit board is prepared by mixing a polytetrafluoroethylene suspension resin with a ceramic powder according to a weight ratio of 100:(1-60), and then carrying out mold pressing, sintering and turning on the obtained mixture. The PTFE ceramic modified substrate film has the advantages of aging resistance, high and low temperature resistance, corrosion resistance, low water absorption, dielectric stability and the like of a PTFE material, and ceramic modification can adjust the dielectric constant, reduce or maintain low dielectric loss and increase the strength. The PTFE ceramic modified substrate film has a low DK value and a low DF value or a high DK value and a low DF value, required by the high-performance circuit board substrate under high-frequency and low-wavelength conditions, such as Sub6 and millimeter waves.

The invention relates to a multi-wavelength filter based on a polarization-maintaining fiber grating, which belongs to the fields of optical fiber communication and instrumentation. A chirped fiber grating (15) is written on a polarization-maintaining fiber (11), and a phase shift (16) is introduced into the chirped fiber grating. Under the action of the stress axis X (12) and the stress axis Y (13) of the polarization-maintaining fiber, the refractive index of the fiber core (14) on the X-axis and the Y-axis is different, forming birefringence, from the polarization-maintaining chirped fiber grating ( The spectrum of 15) has two mutually symmetrical polarization transmission peaks (21) and (22), and the bandwidth of each polarization transmission peak is consistent with the bandwidth of a chirped fiber grating on an ordinary optical fiber. When a phase shift (16) is introduced into the chirped fiber grating (15), corresponding extremely narrow narrow The position of the slit in the bandwidth range can be changed by changing the position of the phase shift introduced, and the transmission depth of the slit can be changed by changing the phase shift amount θ introduced by the phase shift, and the filter wavelength of the slit can also be finely adjusted at the same time, changing The number m of phase shifts can be introduced to change the filtering number of the filter.

The invention relates to a coaxial laser with wavelength calibration and a light source core thereof. The coaxial laser comprises a TO tube base, a TEC refrigerator, heat conduction cushion blocks, analuminum nitride cushion block, a laser chip, a thermistor and a TO pin. The TEC refrigerator, the laser chip and the thermistor are all electrically connected with the TO pin. The main optical axisof the laser chip is coaxial with the central axis of the TO tube base. The TEC refrigerator comprises a temperature control cold face and a heat dissipation hot face. The heat conduction cushion blocks are welded to the temperature control cold face. The heat conduction cushion blocks comprise a first cushion block and a second cushion block. The first cushion block is fixedly arranged on the upper surface of the second cushion block. The second cushion block is arranged on the upper surface of the TEC refrigerator. The thermal diffusion coefficient of a material for manufacturing the first cushion block is greater than 40mm <2> / s. The thermal diffusion coefficient of a material for manufacturing the second cushion block is less than 10mm <2> / s. The invention not only effectively solves the problem of poor indicating value stability of the existing coaxial laser, but also truly realizes the wavelength self-calibration function. The coaxial laser effectively improves the TDLAS gas detection precision, and is more suitable for a TDLAS gas detection system.

The invention provides a two-dimensional material flexible substrate structure, a focal plane optical detector array and a manufacturing method thereof. The two-dimensional material flexible substratestructure comprises a support substrate, a two-dimensional material layer positioned on the surface of the support substrate, and a patterned flexible substrate positioned on the surface of the two-dimensional material layer. The patterned flexible substrate comprises a plurality of pattern units spaced at intervals. According to the two-dimensional material flexible substrate structure providedby the invention, the patterned flexible substrate is combined with the two-dimensional material layer, attraction between upper and lower atoms is greatly weakened by Van der Waals bonding at an interface between the patterned flexible substrate and the two-dimensional material, strength of a Van der Waals force formed at the interface is far less than bond energy of a covalent bond, and the patterned flexible substrate can completely self-control strain absorption and release stress, eliminate or reduce threading dislocation and other lattice structural defects to the greatest extent, and has extremely high absolute flexibility.

The invention discloses a method for solving problems of glue overflowing, glue attachment and glue drawing of a needle in SMD (Surface Mount Device) type LED (Light Emitting Diode) sealing procedure by use of a film releasing agent. The method comprises the following steps: a. after debugging a machine, wiping the surface of a glue dispensing needle with non-dust cloth to ensure that the surface is smooth, clean and dry and has no glue or other pollutants; b. dipping a piece of clean dust-free cloth in the film releasing agent, wiping a glue injection outlet of the glue dispensing needle with the non-dust cloth, wherein the film releasing agent needs to be prevented from dropping on the material under the needle during the process of dipping the dust-free cloth in the film releasing agent; c. checking the glue dispensing needle, wherein only a thin layer of film releasing agent is left on the surface of the glue dispensing needle, and the needle cannot be wiped with too much film releasing agent; d. evaporating the film releasing agent for 5-10min after wiping; and e. starting the machine for operation. According to the method, after the glue dispensing needle is wiped with the film releasing agent, the surface of the needle of the machine has certain repulsive action on epoxy resin adhesive for sealing and the problems of glue overflowing, glue attachment and glue drawing on the needle are solved well.

The invention discloses a method for manufacturing a superconducting cable conductor film. A pulsed laser deposition molecular beam epitaxial film preparation system is used for producing a substratefilm, and the pulsed laser deposition molecular beam epitaxial film preparation system is equipped with a turbo molecular pump to evacuate a deposition chamber to be a vacuum. By means of the method,the wavelength and single-pulse energy of an excimer laser are increased, the pulse particle beam rate is accelerated, and a low pulse energy and high repetition frequency method is adopted to achievethe purpose of high-quality deposition of high-quality films. By means of the method, the distance between a target and a substrate is increased; and through multiple experiments, the distance between the target and the substrate is increased from the original 3.5 mm to 4 mm, so that the phenomenon of film holes caused by too small distance is effectively avoided, and the uneven thickness is alsoavoided. The method needs simple equipment, the technological process is simple and easy to control, the surface of the prepared iron-based superconducting thin film is flat, the density is good, andthe inner face 60-degree rotation double domain structure is formed in the surface.

The invention relates to a wavelength irrelevant fused quartz transmission polarization beam-splitting grating used for ultraviolet to near-infrared wave bands with wavelength ranging from 300 nanometers to 1800 nanometers. The grating is characterized in that incidence conditions and uniformized structure parameters are not changed with wavelength. The uniformized structure parameters are as follows: the dutyfactor of the grating is 0.5, the ratio of incident wavelength to the grating period ranges from 1.74 to 1.75, the ratio of etched depth to the grating period ranges from 2.21 to 2.22, and the grating has extremely high transmission efficiency and polarization extinction ratio in the wave bands. In the practice of production, the wavelength irrelevant fused quartz transmission polarization beam-splitting grating can be processed by the optical holography recording technique or an electron beam write-through device combined with the micro-electronic deep etching process and has the advantages of mature process, low manufacturing cost, mass production and important practical prospect.

The invention relates to a distance sensor module, a mobile terminal, a distance detection method and device and a storage medium. The distance sensor module is arranged below a screen of the mobile terminal. The distance sensor module comprises a light emitter, a light receiver, an analog front end, an analog-digital converter and a micro-control unit. The method comprises the steps of: controlling the light receiver to generate a light signal after receiving reflected detection light emitted by the light emitter, wherein the detection light is detection light with the wavelength larger than1,300 nm; controlling the optical receiver to convert the optical signal into a first current signal; executing processing conversion on the first current signal to obtain a digital signal; and controlling the micro-control unit to detect the distance according to the digital signal. Because the wavelength of the detection light is increased and the frequency is reduced, the photon energy in the detection light is low, and the problem that the detection light is excited in the mobile terminal screen to generate bright spots is further solved.

A method for surface treatment of a transparent polymer part is disclosed, consisting of, in a first step, etching a determined topography of patterns in relief onto the external surface of a metal mould using a femtosecond laser and, in a second step, applying the mould under pressure onto the surface of the part to be treated, in such a way as to reproduce the patterns of the mould, in negative, on the part; said topography of patterns being adapted to the type of polymer, both to optimize the wettability of the surface preventing the formation of condensation on said surface and also so as not to affect the optical properties of the part.

The invention discloses a vertical external cavity surface emitting laser. The vertical external cavity surface emitting laser comprises a collimating lens; a laser emitting chip which is located at the first side of the collimating lens, the laser emitting chip comprises a first electrode provided with a first light outlet, a first contact layer, an active layer, a second contact layer and a second electrode provided with a second light outlet sequentially stacked from bottom to top, and the first light outlet being located on the focal plane of the first side of the collimating lens; a diffraction grating which is positioned at the second side of the collimating lens, and the first side being opposite to the second side; and a first top cavity mirror which is positioned on one side, faraway from the collimating lens, of the laser emitting chip, or a second top cavity mirror which is positioned in the laser emitting chip. The diffraction grating has a very wide tuning range and can provide flat first-order diffraction efficiency, so that the gain spectrum range of the active layer of the laser emitting chip is fully covered, the wavelength tuning range is the gain spectrum range,the wavelength tuning range is widened, and the vertical outer resonant cavity enables the cavity length of the gain resonant cavity to be increased and the spectral line width to be narrowed.

The invention discloses a bridge-tunnel connecting segment anti-freezing system based on a semiconductor laser technology. The bridge-tunnel connecting segment anti-freezing system comprises a tunnel,a beam body, bridge piers, semiconductor lasers, a driving power supply, a control room, transmission cables, a freezing zone and a sidewalk; an arch ring of the tunnel is connected with the beam body, the beam body is supported by the bridge piers, the transmission cables and a plurality of semiconductor lasers are embedded in concrete of the sidewalk of the beam body, the transmission cables and the plurality of semiconductor lasers are in parallel connection, the semiconductor lasers embedded in the sidewalk are not completely closed, a front radiation zone is exposed and capable of irradiating laser into the freezing zone, the semiconductor lasers are connected with the distant driving power supply through the transmission cables, the driving power supply is placed in the control room, and the driving power supply can be manually powered on in the control room. By adopting the bridge-tunnel connecting segment anti-freezing system based on the semiconductor laser technology, the freezing on a bridge deck can be prevented and removed under low-temperature humid and easily-freezing conditions.

The invention discloses diamond optical fiber and a manufacturing method thereof. The optical fiber is the diamond optical fiber which comprises a hollow conduit, wherein a diamond film is plated on the inner wall of the hollow conduit, and the thickness of the diamond film is ranged from 1 nanometer to 10 millimeters. The manufacturing method of the diamond optical fiber comprises the following steps: (1) washing the inner surface of the hollow conduit with pure water and drying the inner surface of the hollow conduit after the inner surface of the hollow conduit is corroded by acid, (2) leading methane and hydrogen into the hollow conduit, disposing the hollow conduit with radio frequency or microwave to enable plasma to form in the cavity of the hollow conduit, and thus the diamond film is precipitated on the inner wall of the hollow conduct, (3) placing the hollow conduit with the diamond film being precipitated on the inner wall of the hollow conduit in a sealed container, heating continuously more than 5 minutes under the condition that temperature is less than 800 DEG C, and taking out an end product. The diamond optical fiber is made of hollow conduit with the diamond film plated on the inner wall of the hollow conduit layer, the transmission wavelength of the diamond optical fiber can be transmitted from an ultraviolet wave band to a far infrared wave band, and a high-power lasher can be transmitted, and the diamond conduit has certain bendability and high promotion value.

The invention discloses a dual-wavelength switchable optical fiber laser. The fiber laser comprises a first laser pumping source, a first collimating lens, a dichroscope, a first focusing lens, a first fiber bragg grating, a second fiber bragg grating, a single-cladding Dy3 +: InF3-doped fiber, a third fiber bragg grating, a fourth fiber bragg grating, a second focusing lens, a second collimating lens and a second laser pumping source which are sequentially arranged along the horizontal direction. The first laser pumping source generates laser with the wavelength of 1.7 microns, the second laser pumping source generates laser with the wavelength of 2.35 microns, the first fiber bragg grating and the fourth fiber bragg grating form a first resonant cavity for generating laser with the wavelength of 3 microns, and the second fiber bragg grating and the third fiber bragg grating form a second resonant cavity for generating laser with the wavelength of 4.3 microns. According to the invention, double output and free switching of 3 [mu]m laser and 4.3 [mu]m laser can be realized, and the device is high in stability and high in laser generation efficiency.

The invention provides a pre-chirp and SSFS (Soliton Self-Frequency Shift) based wavelength space adjustable double-color soliton pulse light source system which is suitable for the technical field of lasers. The wavelength space adjustable double-color soliton pulse light source system comprises a femtosecond laser, a pre-chirp optical device, a lens and an anomalous dispersion optical fiber along the direction of an optical path; the femtosecond laser is used for generating a first soliton and a second soliton; the energy of the input pulse of the femtosecond laser can be adjusted and the soliton order number N is increased along with the increase of the energy of the input pulse; the pre-chirp optical device is used for adjusting the width of the input pulse to ensure that the wavelength of the first soliton is maintained to be unchanged under the condition that the soliton order number is improved; the adjustment direction on the width of the input pulse is the same as that of the energy of the input pulse of the femtosecond laser. According to the wavelength space adjustable double-color soliton pulse light source system, the wavelength space tuning between the two solitons is based on the basic attribute of soliton components in high-order solitons, namely that the higher the soliton order number N, the closer the peak power and the pulse width of the two solitons, and accordingly the wavelength space between the two solitons after the SSFS is small.

The invention discloses a sunlight room with a selective transmission photovoltaic film for plant light supplementing. The sunlight room comprises a south wall, a north wall, sloped beams, glass, the selective transmission photovoltaic film, plant light supplementing lamps, a storage battery and a control box. The south wall is connected with the north wall through the sloped beams at the top; the glass is the roof of the sunlight room, and is supported and fixed through the sloped beams; the glass is covered with the selective transmission photovoltaic film, and the plant light supplementing lamps are located below the sloped beams and fixed on the sloped beams. By means of the sunlight room, it is achieved that under the condition that additional energy does not exist, solar energy is completely converted into sunlight required by plants, sunlight is supplied to plants in a reasonable mode, the structure is simple and compact, the cost is low, and the popularization potential is large.

The invention discloses a manufacturing method of an ultraviolet light-emitting diode epitaxial structure layer. The method comprises an AlN buffer layer, a non-doped AlN thin film layer, an n-type doped AlN layer, an active layer and a p-type doped AlN layer, wherein the AlN buffer layer, the non-doped AlN thin film layer and the n-type doped AlN layer successively grow on a sapphire substrate through a sputter coating mode, the active layer grows through an MOCVD mode, and the p-type doped AlN layer grows through the sputter coating mode. The method has advantages that the MOCVD grows through a physical sputtering mode, a high-quality AlN material which is not easy to grow is grown, and n-type Si doping and p-type Mg doping are realized; based on that, growth of an AlGaN active layer with s higher Al content by the MOCVD is easier to realize; an ultraviolet light emitting diode can emit ultraviolet light with a shorter wavelength; therefore, an epitaxial structure design of the ultraviolet light-emitting diode is simplified, manufacturing difficulty of the ultraviolet light-emitting diode is reduced, and overall light-emitting efficiency of the ultraviolet light-emitting diode isimproved because a p-type doped GaN ohmic contact epitaxial layer capable of absorbing the ultraviolet light does not need to be manufactured.

The invention discloses a parallelism-adjustable micro-electro-mechanical system Fabry-Perot cavity wavelength tunable filter. The surface of a micro-bridge part is used as an upper electrode of the Fabry-Perot cavity; a grating is located at the center of the surface of the micro-bridge part; the bottommost layer is used as a substrate; a plurality of lower electrodes are distributed below the micro-bridge part in symmetry and in parallel, and respectively fixed on two insulation layers; the two insulation layers cover on the substrate and are used for electrically insulating the plurality of the lower electrodes from the upper electrode; two rectangular holes are formed at two sides of the micro-bridge part; the front cavity surface is located at the lower surface of the bridge surface corresponding to the grating area; the rear cavity surface is located at the upper surface of the substrate which is located below the grating and between the two insulation layers as the rear cavity surface of the Fabry-Perot cavity; and different voltages are applied between the plurality of the lower electrodes and the upper electrode so as to form a complex electrostatic field, so that the movable cavity surface of the Fabry-Perot cavity can be adjusted in appearance while moving downwards, thereby adjusting the parallelism between the front cavity surface and the rear cavity surface of the Fabry-Perot cavity.