Light-emitting diode epitaxial wafer, manufacturing method thereof, light-emitting diode chip manufacturing method, and substrate recycling method
A technology of light-emitting diodes and epitaxial wafers, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., to achieve the effects of reducing environmental pollution, reducing costs, and small lattice mismatch
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Embodiment 1
[0054] An embodiment of the present invention provides a light emitting diode epitaxial wafer, see figure 1 , the light emitting diode (Light Emiting Diode, LED for short) epitaxial wafer includes a GaAs substrate 11 and a first epitaxial layer grown on the GaAs substrate 11 .
[0055] Wherein, the first epitaxial layer includes an N-type GaAs buffer layer 12 on the GaAs substrate 11, a first N-type Ga X In 1-X P layer 13 , N-type GaAs layer 14 , N-type AlAs sacrificial layer 16 , N-type GaInP etch stop layer 17 , N-type GaAs ohmic contact layer 18 , N-type AlInP layer 19 , quantum well layer 20 , and P-type layer 21 . 0.47<X<0.51.
[0056] Among them, the first N-type Ga X In 1-X The lattice constants of the P layer, the N-type GaAs layer, and the N-type AlAs sacrificial layer are similar to those of the GaAs substrate and the AlGaInP LED epitaxial layer materials, and the lattice mismatch is small. figure 2 shows the Ga X In 1-X Lattice constants of P and GaAs. When...
Embodiment 2
[0063] The embodiment of the present invention provides a method for preparing an epitaxial wafer of a light emitting diode, which is suitable for preparing an epitaxial wafer of an AlGaInP LED. see Figure 5 , the method includes:
[0064] Step 201, providing a GaAs substrate.
[0065] Step 202, growing a first epitaxial layer on the GaAs substrate to obtain an LED epitaxial wafer.
[0066] Wherein, the first epitaxial layer includes an N-type GaAs buffer layer, a first N-type Ga X In 1-X P layer, N type GaAs layer, N type AlAs sacrificial layer, N type GaInP etch stop layer, N type GaAs ohmic contact layer, N type AlInP layer, quantum well layer, and P type layer. 0.47<X<0.51.
[0067] Optionally, the first N-type Ga X In 1-X The growth conditions of the P layer include growth temperature of 640-660 degrees, TMGa flow of 40-50sccm, TMIn flow of 800-850sccm, PH3 flow of 900-1100sccm, thickness of 100-300nm, doping concentration of 1e-18~ 5e-18, the lattice mismatch is...
Embodiment 3
[0075] The embodiment of the present invention provides a method for preparing a light emitting diode chip, which is suitable for preparing an AlGaInP LED chip. see Figure 6 , the method includes:
[0076] Step 301, providing a first epitaxial wafer.
[0077] Wherein the structure of the first epitaxial wafer is the same as that of the LED epitaxial wafer provided in Embodiment 1, and will not be repeated here.
[0078] Step 302, bonding the first epitaxial wafer to the first substrate.
[0079] Among them, see Figure 7 , the first epitaxial layer 10 is located between the GaAs substrate 11 and the first substrate 30 .
[0080] The prepared first epitaxial wafer can be bonded to the first substrate through a metal bonding process, and the material of the first substrate can be Si, sapphire, flexible conductive polyester resin (English: Polyethylene Terephthalate, abbreviated: PET or PEIT), or copper.
[0081] Since the epitaxial layer is very thin, the first epitaxial ...
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