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Linear polarization light-emitting laser diode having resonant cavity

A laser diode and linear polarization technology, applied to the field of linearly polarized light-emitting laser diodes, can solve the problems of reducing laser usage efficiency, affecting the luminous efficiency and polarization characteristics of polarized light-emitting devices, and weak penetrating ability, achieving excellent optical polarization characteristics and improving light output. Efficiency and wavelength uniformity, the effect of improving the extinction ratio

Active Publication Date: 2015-10-28
XI AN JIAOTONG UNIV
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Problems solved by technology

In the field of medicine, laser acupuncture has been widely used clinically. However, ordinary laser light has a large scattering loss and weak penetration ability after being injected into skin tissue, which reduces the efficiency of laser use. Polarized laser can just solve this problem.
In addition, in the diagnosis and treatment of laser medicine, according to the difference in the optical properties of normal tissue and diseased tissue (tumor), the polarized laser is incident, and then according to the difference in the degree of polarization of the scattered light, to obtain better contrast of the diseased tissue , but the extinction ratio of polarized laser light produced by existing GaN-based LEDs is low, and the half-width of polarized laser light is wide, which seriously affects the luminous efficiency and polarization characteristics of polarized light-emitting devices

Method used

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  • Linear polarization light-emitting laser diode having resonant cavity
  • Linear polarization light-emitting laser diode having resonant cavity

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Embodiment 1

[0026] refer to figure 1 A GaN-based LED chip with a horizontal structure consists of a sapphire substrate 1, u-GaN buffer layer 2, n-GaN3, n-electrode 8, quantum well 4, p-GaN5, ITO layer 6 and p-electrode 7, during the manufacturing process , by nanoimprinting or laser interference method to make strip grating 9 patterns, and then use photon beam evaporation to deposit metal Ag to remove the mask to form strip grating 9; sputter ITO layer 6 on p-GaN5 as current spreading layer, and then use the method of sputtering to make the reflector 10 on the ITO layer 6, and then use dry etching to expose the n-GaN3, and finally make the upper electrode.

Embodiment 2

[0028] refer to figure 2 , a GaN-based LED chip with a flip-chip structure includes a metal substrate 12 bonding layer, a metal adhesion layer 11, a p-electrode 7, an ITO layer 6, p-GaN5, a quantum well 4, n-GaN3, an n-electrode 8, u -GaN buffer layer 2 and sapphire substrate 1, the difference between the manufacturing process and the first embodiment is that: the mirror 10 is made on the sapphire substrate 1, and the strip grating is made on the ITO layer 6.

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Abstract

The present invention discloses a linear polarization light-emitting laser diode having a resonant cavity, comprising a GaN-based LED chip, and a reflector and a plurality of bar-shaped gratings which are respectively arranged at the upper part and the lower part of the GaN-based LED chip, wherein the bar-shaped gratings are distributed successively from the left to the right, and are arranged in parallel. The linear polarization light-emitting laser diode of the present invention has excellent light-emitting efficiency and polarization properties.

Description

technical field [0001] The invention belongs to the field of optoelectronic devices, and relates to a linearly polarized light-emitting laser diode, in particular to a linearly polarized light-emitting laser diode with a resonant cavity. Background technique [0002] GaN-based LEDs, as a new generation of solid-state lighting sources, have the advantages of low power consumption, long life, and high luminous efficiency, and are playing an increasingly important role in lighting and display. The structure of the LED epitaxial wafer is designed, and the emission of polarized laser light can be realized after adding a resonant cavity and a grating. LD with polarized light is a promising research direction, which has important research significance and potential application value. In the field of medicine, laser acupuncture has been widely used clinically. However, ordinary laser light has a large scattering loss and weak penetration ability after injected into skin tissue, whi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/34H01S5/187H01S5/068
Inventor 云峰熊瀚黄亚平
Owner XI AN JIAOTONG UNIV
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