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Wave length adjustable vertical cavity surface emitting laser diode

A surface-emitting laser, vertical cavity technology, used in lasers, laser parts, semiconductor lasers, etc., can solve the problems of high gain loss of laser resonance characteristics, difficulty in rapidly changing operating temperature, and increase in operating temperature, and achieve widened wavelength tunable. area, the effect of avoiding the deterioration of the laser resonance gain characteristics

Inactive Publication Date: 2004-02-18
SAMSUNG ELECTRONICS CO LTD
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  • Summary
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Problems solved by technology

[0005] However, when changing the wavelength of emitted light by changing the operating temperature, it is difficult to change the wavelength of emitted light because it is difficult to quickly change the operating temperature.
In addition, if the operating temperature increases, the laser resonance characteristics will be severely degraded due to too much gain loss
Also, the VCSEL may stop working due to sudden release during its operating temperature change

Method used

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  • Wave length adjustable vertical cavity surface emitting laser diode
  • Wave length adjustable vertical cavity surface emitting laser diode
  • Wave length adjustable vertical cavity surface emitting laser diode

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Embodiment Construction

[0018] The wavelength tunable VCSEL in an embodiment of the present invention will be described below with reference to the accompanying drawings. In the drawings, the thickness of layers or regions are exaggerated for clarity.

[0019] see figure 2 , reference numeral 40 denotes a substrate, which is a compound semiconductor substrate on which upper and lower distributed Bragg reflectors (DBRs) 50 and 70 and a cavity resonance layer 60 are formed. A lower DBR 50 is formed on the substrate 40 . The lower DBR 50 is formed by alternately stacking first and second compound semiconductor layers 52 and 54 . The first and second compound semiconductor layers 52 and 54 preferably do not absorb light emitted from the cavity resonance layer 60 . Therefore, the energy bandgap of the first and second compound semiconductor layers 52 and 54 is preferably larger than the resonance wavelength. For example, both the first and second compound semiconductor layers 52 and 54 are preferably...

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Abstract

A wavelength tunable VCSEL is provided. The wavelength tunable VCSEL includes a current constricting layer which is formed on a lower distributed Bragg reflector, upper and lower electrodes for laser oscillation, and additional electrodes which are formed on a predetermined region of an upper distributed Bragg reflector from which light is emitted so as to vary a width of an effective resonance region. Compared to an existing VCSEL, the wavelength tunable VCSEL can rapidly change a wavelength of emitted light and prevent the deterioration of gain characteristics of laser oscillation due to variations in the width of the effective resonance region according to variations in a temperature. As a result, a wavelength tunable region of emitted laser can be increased.

Description

technical field [0001] The invention relates to a semiconductor laser, in particular to a wavelength tunable vertical cavity surface emitting laser diode (VCSEL). Background technique [0002] The structure of the VCSEL has multiple distributed Bragg reflectors (DBRs), each with a refractive index of 99%, and they are formed above and below the active layer so that in the direction perpendicular to each stack make the light resonate. The DBR is obtained by stacking a variety of materials with large refractive index differences and similar lattice constants to facilitate crystal epitaxial growth, for example: by alternately stacking GaAs and AlAs or alternately stacking two dielectric materials with large refractive index differences Thus, the two dielectric materials can be obtained from, for example, silicon dioxide SiO 2 layer, aluminum oxide Al 2 o 3 layer and TiO 2 layer selection. In such a DBR, it is desirable to have an energy band gap larger than the resonance ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/18H01S5/042H01S5/183H01S5/343
CPCB82Y10/00H01S5/0614H01S5/18325H01S5/18311B82Y20/00
Inventor 金泽
Owner SAMSUNG ELECTRONICS CO LTD
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