The invention discloses a barium zirconate titanate film annealing method based on radio frequency magnetron sputtering, and belongs to the technical field of barium zirconate titanate preparation. Strontium titanate is used as a matrix, a strontium ruthenate material is sputtered to be used as a substrate, the substrate is sputtered to the surface of the matrix by using a magnetron sputtering technology, and then a barium zirconate titanate target material is used for sputtering a barium zirconate titanate material to be plated on the surface, wherein the zirconium content in the barium zirconate titanate target material is 20 mol.%. In the strontium ruthenate electrode deposition process, mixed atmosphere sputtering is adopted to obtain a film, in the barium zirconate titanate film deposition process, mixed atmosphere sputtering is adopted to obtain the film with the thickness of 280 nm, after sputtering is finished, a sample is subjected to heat preservation treatment, and then part of the sample is taken out to be subjected to annealing treatment. By means of the annealing process, the intensity of the diffraction peak of the barium zirconate titanate film is effectively enhanced, the crystallinity of the barium zirconate titanate film is improved, then the quality of the film is improved, and the ferroelectric performance of the film is obviously improved.