Zinc oxide/strontium ruthenate core-shell nanowire and preparation method thereof

A zinc oxide nanowire, core-shell nanotechnology, applied in the direction of zinc oxide/zinc hydroxide, chemical instruments and methods, nanotechnology, etc., to achieve good application prospects, low price, simple and easy process

Active Publication Date: 2014-12-24
江苏先进无机材料研究院
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention aims to overcome existing SrRuO 3 Defects of nanomaterial preparation methods and further expansion of SrRuO 3 The type of nanomaterials, the invention provides a zinc oxide / strontium ruthenate core-shell nanowire and its preparation method

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  • Zinc oxide/strontium ruthenate core-shell nanowire and preparation method thereof
  • Zinc oxide/strontium ruthenate core-shell nanowire and preparation method thereof
  • Zinc oxide/strontium ruthenate core-shell nanowire and preparation method thereof

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preparation example Construction

[0031] The invention relates to a preparation method of zinc oxide / strontium ruthenate core-shell nanowires, belonging to the technical field of preparation of low-dimensional nanometer materials. The realization process of the present invention comprises three parts, namely the preparation of ZnO seed crystal layer, the preparation of ZnO nano wire and ZnO / SrRuO 3 Preparation of core-shell nanowires. The specific steps are as follows: ①Prepare a dense ZnO seed layer on Si substrate by sol-gel method; ②Grow one-dimensional ZnO nanowires with good uprightness by aqueous solution method; ③Use ZnO nanowires as a template, use pulse Preparation of SrRuO by Laser Deposition 3 Thin films, obtained ZnO / SrRuO 3 core-shell nanowires. The Si substrate adopted by the invention is cheap, and the large-area preparation of the ZnO nanowire can be realized by using the aqueous solution method, and the template of the ZnO nanowire does not need high-temperature treatment, and the process o...

Embodiment 1

[0050] The concrete steps of the method provided according to the invention are:

[0051] 1) Preparation of ZnO seed layer by sol-gel method

[0052] Dissolve 8.92g of monoethanolamine in 200ml of ethylene glycol methyl ether solvent, add 32.8g of zinc acetate, and stir in a 65°C water bath for 35 minutes to form a 0.75mol / L sol precursor (mixed solution of monoethanolamine and zinc acetate) . After immersing the Si substrate cleaned with hydrofluoric acid into the prepared sol for 1 minute, a gel film was formed at a pulling speed of 1 cm / min, then heat-treated at 320 °C for 20 minutes, and then pulled at a rate of 2 °C / min for the second time. The temperature is slowly raised to 540°C at a minute rate, and a dense ZnO seed layer is formed after holding the temperature for 1 hour;

[0053] 2) Preparation of ZnO nanowires by aqueous solution method

[0054] Dissolve 1.4g of hexamethylenetetramine in 200mL of deionized water, add 1.6mL of polyvinylamine and stir, add 200mL o...

Embodiment 2

[0060] The concrete steps of the method provided according to the invention are:

[0061] 1) Preparation of ZnO seed layer by sol-gel method

[0062] Dissolve 9.51g of monoethanolamine in 200ml of ethylene glycol methyl ether solvent, add 34.99g of zinc acetate, and stir in a 75°C water bath for 45 minutes to prepare a 0.8mol / L sol precursor. After immersing the Si substrate cleaned with hydrofluoric acid in the prepared sol for 2 minutes, a gel film was formed at a pulling speed of 2 cm / min, and then heat-treated at 340°C for 25 minutes. The temperature is slowly raised to 560°C at a minute rate, and a dense ZnO seed layer is formed after holding for 2 hours;

[0063] 2) Preparation of ZnO nanowires by aqueous solution method

[0064] Dissolve 1.68g of hexamethylenetetramine in 200mL of deionized water, add 1.8mL of polyvinylamine and stir, add 200mL of 3.57g of zinc nitrate aqueous solution after dissolving, stir thoroughly for 40 minutes and prepare a 0.03mol / L growth sol...

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Abstract

The invention relates to a zinc oxide / strontium ruthenate core-shell nanowire and a preparation method thereof. The zinc oxide / strontium ruthenate core-shell nanowire comprises a zinc oxide nanowire layer constituted by a zinc oxide nanowire growing vertically and a strontium ruthenate film covered on the zinc oxide nanowire layer.

Description

technical field [0001] The invention belongs to the technical field of preparation of low-dimensional nanometer materials, and in particular relates to a zinc oxide / strontium ruthenate core-shell nanowire and a preparation method thereof. Background technique [0002] SrO 3 With a three-dimensional orthogonal distortion perovskite structure ( The lattice constant converted into a pseudocubic unit cell is ) (C.W.Jones, P.D.Battle, P.Lightfoot, and W.T.A.Harrison, Acta Crystallogr.Sect.C 1989(45):365.), is a transition metal conductive oxide with a room temperature resistivity of about 230μΩ.cm. SrO 3 It still has good chemical and thermal stability at a high temperature of 900°C, and it is compatible with the widely studied superconducting, ferroelectric, piezoelectric, and pyroelectric functional materials (such as: YBCO, BFO, PZT, SBT) etc.) has a similar crystal structure and good lattice matching, so it has a wide range of applications, and can be used as a buffer l...

Claims

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Application Information

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IPC IPC(8): C01G9/02C01G55/00B82Y30/00B82Y40/00
Inventor 郑明郑仁奎李雪艳李效民
Owner 江苏先进无机材料研究院
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