A kind of preparation method of flexible epitaxial ferroelectric thin film
A ferroelectric thin film, flexible technology, applied in the field of preparation of flexible epitaxial ferroelectric thin film, can solve the problems of unsuitability, low tensile strength, expensive price, etc., and achieve the effect of optimization of preparation technology and excellent ferroelectric performance
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Embodiment 1
[0045] A method for preparing a flexible epitaxial PZT ferroelectric thin film by a sol-gel method is characterized in that, comprising the following steps:
[0046] 1.1 Preparation of single crystal mica sheet and preparation of bottom electrode: choose smooth and crack-free natural mica sheet, then stick the natural mica sheet on the operating table, and tear it up layer by layer with pointed tweezers until the single crystal flexible mica sheet is The thickness is less than 50μm (curvature radius ≤2.5mm); then a layer of cobalt ferrite CoFe is prepared on the upper single crystal flexible mica sheet by laser pulse deposition method 2 O 4 (hereinafter referred to as CFO) as a buffer layer and a seed layer, and then a layer of SRO consistent with the ferroelectric material structure is grown on the CFO, wherein the thickness of the CFO is 5nm, and the thickness of the SRO is 30nm;
[0047] 1.2 Preparation of PZT by sol-gel method (material ratio: Pb:Zr:Ti=100:52:48) Precurso...
Embodiment 2
[0053] A method for preparing a flexible epitaxial BTO ferroelectric thin film by a sol-gel method is characterized in that, comprising the following steps:
[0054] 1.1 Preparation of single crystal mica sheet and preparation of bottom electrode: choose smooth and crack-free natural mica sheet, then stick the natural mica sheet on the operating table, and tear it up layer by layer with pointed tweezers until the single crystal flexible mica sheet is The thickness is less than 50μm (curvature radius ≤2.5mm); then a layer of cobalt ferrite CoFe is prepared on the upper single crystal flexible mica sheet by laser pulse deposition method 2 O 4 (hereinafter referred to as CFO) as a buffer layer and a seed layer, and then a layer of SRO consistent with the ferroelectric material structure is grown on the CFO, wherein the thickness of the CFO is 5nm, and the thickness of the SRO is 30nm;
[0055] 1.2 Precursor solution of BTO (material ratio: Ba:Ti=1:1) ferroelectric thin film prep...
Embodiment 3
[0061] Flexible epitaxial bismuth ferrite BiFeO prepared by a sol-gel method 3 (hereinafter abbreviated as BFO) the method for ferroelectric thin film, is characterized in that, comprises the following steps:
[0062] 1.1 Preparation of single crystal mica sheet and preparation of bottom electrode: choose smooth and crack-free natural mica sheet, then stick the natural mica sheet on the operating table, and tear it up layer by layer with pointed tweezers until the single crystal flexible mica sheet is The thickness is less than 50μm (curvature radius ≤2.5mm); then a layer of cobalt ferrite CoFe is prepared on the upper single crystal flexible mica sheet by laser pulse deposition method 2 O 4 (hereinafter referred to as CFO) as a buffer layer and a seed layer, and then a layer of SRO consistent with the ferroelectric material structure is grown on the CFO, wherein the thickness of the CFO is 5nm, and the thickness of the SRO is 30nm;
[0063] 1.2 Precursor solution of BFO (ma...
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