The invention discloses an application of a cleaning fluid after chemical mechanical polishing. The invention specifically discloses the application of the cleaning fluid to cleaning of a semiconductor device after chemical mechanical polishing. The raw materials of the cleaning fluid comprise the following components by mass: 0.01%-25% of strong base, 0.01%-30% of alcohol amine, 0.001%-1% of antioxidants, 0.01%-0.1% of polypeptide, 0.01%-0.1% of amino acid, 0.01%-10% of corrosion inhibitors, 0.01%-10% of chelating agents, 0.01%-5% of surfactants and 28.9%-89.9% of water, and the sum of the mass fractions of all the components is 100%, wherein the amino acid is a combination of histidine and cysteine, and the polypeptide is a combination of reduced glutathione (peptide A) and oxidized glutathione (peptide B). The cleaning fluid is higher in cleaning capacity, lower in corrosion rate, higher in BTA removal capacity and higher in stability, and the effects of cleaning, corrosion inhibition and BTA removal can be achieved at the same time.