Cleaning liquid after chemical mechanical polishing and preparation method thereof

Abstract

The invention discloses a cleaning liquid after chemical mechanical polishing and a preparation method thereof. The cleaning liquid comprises the following raw material components in mass fraction: 0.01%-25% of alkali, 0.01%-30% of alcohol amine, 0.001%-1% of an antioxidant, 0.01%-0.1% of polypeptide, 0.01%-0.1% of amino acid, 0.01%-10% of a corrosion inhibitor, 0.01%-10% of a chelating agent, 0.01%-5% of a surfactant, 28.9-89.9% of water, based on 100% in total, wherein the amino acid is a combination of histidine and cysteine, and the polypeptide is reduced glutathione (peptide A) and oxidized glutathione (peptide B). The cleaning liquid is stronger in cleaning ability, is lower in corrosion rate, is stronger in BTA removal ability, is better in stability, and can realize the effects of cleaning, corrosion inhibition and BTA removal at the same time.

Description

technical field [0001] The invention relates to a cleaning liquid after chemical mechanical polishing and a preparation method thereof. Background technique [0002] Metal materials such as copper, aluminum, tungsten, etc. are commonly used wire materials in integrated circuits. Chemical Mechanical Polishing (CMP) has emerged as the primary technique for wafer planarization during device fabrication. Metal chemical mechanical polishing fluids usually contain abrasive particles, complexing agents, metal corrosion inhibitors, oxidants, and the like. The abrasive particles are mainly silicon dioxide, aluminum oxide, aluminum-doped or aluminum-covered silicon dioxide, ceria, titanium dioxide, polymer abrasive particles, etc. After the metal CMP process, the surface of the wafer will be polluted by metal ions and abrasive particles in the polishing solution, which will affect the electrical characteristics of the semiconductor and the reliability of the device. The residue of ...

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a cleaning solution after chemical mechanical polishing and its preparation method in order to overcome the defects of the existing cleaning solution such as cleaning, corrosion, timeliness, and poor biocompatibility.

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