99 results about "Charge-transfer complex" patented technology

Specific core-shell binders and magnetic additives for use in ink-jet printing ink compositions are provided. One class of specific core / shell binders has the general formula [AmBnC'p]x, where A and B are hydrophobic components in which A exhibits a glass transition temperature Tg between about -150° and +25° C. and B exhibits a glass transition temperature greater than 25° C., C' is a component that forms hydrophilic or water-soluble component in the polymer chain, and has an ionic or non-ionic structure, m<30 wt %, n>40 wt %, and p<30 wt %, with the total of m+n+p=100 wt %, and x=1 to 100,000. The molecular weight (weight average) of the polymer is between about 1,000 and 2,000,000. The polymers useful in the practice of the invention are prepared by emulsifying the monomers and then conducting a free-radical polymerization in water. The foregoing binder polymer is used in conjunction with magnetic additives comprising either (a) inorganic magnetic compound containing at least one of iron, cobalt, and nickel or (b) organic magnetic complexes containing at least one of iron, cobalt, and nickel or (c) organic charge transfer complexes that exhibit magnetic properties. The ratio of binder (I) to colorant (pigment) is greater that 1 to 10. The concentration of the magnetice additive is within the range of 1 to 30 wt %. The general ink formulation comprises: 5 to 50 wt % water-miscible solvent; 0.5 to 10 wt % colorant; 1 to 30 wt % magnetice additive; and water.

An organic light-emitting device includes a light-emitting layer including a host, a dopant, and a hole-trapping material, wherein the hole-trapping material is provided at 0.01 to less than 5% by volume relative to the light-emitting layer volume, has an oxidation potential that is selected so that it is less than the oxidation potential of the host in order to serve as a hole trap, has an oxidation potential that is selected so as to avoid formation of a certain charge transfer complex between the hole-trapping material and the host if the charge transfer complex causes a reduction in the electroluminescent efficiency of the dopant, and has an oxidation potential that is selected so as to avoid formation of the charge transfer complex between the hole-trapping material and the dopant.

An organic device, including an organic compound having charge-transporting ability (i.e., transporting holes and / or electrons) and / or including organic light emissive molecules capable of emitting at least one of fluorescent light or phosphorescent light, has a charge transfer complex-contained layer including a charge transfer complex formed upon contact of an organic hole-transporting compound and molybdenum trioxide via a manner of lamination or mixing thereof, so that the organic hole-transporting compound is in a state of radical cation (i.e., positively charged species) in the charge transfer complex-contained layer.

The invention relates to an infrared light and visible light conversion device, belongs to the field of semiconductor devices and in particular relates to a device which takes a CTC (Charge Transfer Complex) as an infrared detection material, is integrated with an OLED (Organic Light Emitting Diode) and is used for realizing conversion of signal light from an infrared light band to an visible light band. The infrared light and visible light conversion device consists of a substrate, an anode layer, an infrared absorbing material layer, an OLED organic material layer and a cathode layer and is characterized in that the infrared absorbing material is a CTC material which is formed by doping small organic molecules and MoO3 or HAT-CN (Hexaazatriphenylenehexacabonitrile). The infrared light and visible light conversion device disclosed by the invention can be used for realizing the conversion from an infrared band (0.8-1.6mu m) to visible light bands (400nm-440nm, 500-554nm and 620-660nm).

The switching element has a switching layer between a first electrode layer and a second electrode layer. The switching layer includes a charge transfer complex containing an electron donor and an electron acceptor. An insulating layer is provided between the first electrode layer and the switching layer, and contacts the switching layer. The switching layer switches from a high-resistance state to a low-resistance state upon application of a voltage greater than a first threshold value in a first bias direction. Thereafter, the switching layer maintains the low-resistance state when the applied voltage decreases beyond the first threshold value. When the applied voltage becomes not smaller than a second threshold value in a second bias direction or a reverse direction to the first bias direction, the switching layer switches from the low-resistance state to the high-resistance state. Thereafter, the switching layer maintains the high-resistance state when the applied voltage decreases beyond the second threshold value.

A nonvolatile memory has a problem in that applied voltage is high. This is because a carrier needs to be injected into a floating gate through an insulating film by a tunneling effect. In addition, there is concern about deterioration of the insulating film by performing such carrier injection. An object of the present invention is to provide a memory in which applied voltage is lowered and deterioration of an insulating film is prevented. One feature is to use a layer in which an inorganic compound having a charge-transfer complex is mixed with an organic compound as a layer functioning as a floating gate of a memory. A specific example is an element having a transistor structure where a layer in which an inorganic compound having a charge-transfer complex is mixed with an organic compound and which is sandwiched between insulating layers is used as a floating gate.