The invention discloses a ZnO / CdO
composite film with low resistivity. The film is mainly prepared by the following steps: using
pulsed laser deposition equipment with four target holders, wherein the target holders adopt high-purity
metal Zn targets and Cd targets; depositing 10
layers of ZnO films and CdO films at intervals by the
pulsed laser deposition equipment under the
atmosphere of 10 pascal
oxygen and 300DEG C of the base temperature so as to form a
composite film structure. According to the method disclosed by the invention, the ZnO / CdO
composite film is prepared on a
quartz glass substrate by a
pulsed laser deposition method; the
phase composition, the
crystal structure and the
crystal of the film are identified by an X-
ray diffractometer, and the best film is selected; an JSM6700F field emission
scanning electron microscope which is produced by the Japanese Shi-madzu company is used to observe the surface appearance of the film, and besides, an
energy spectrum which is matched with the field emission
scanning electron microscope is used to analyze the component content of the film. The film consists of ZnO and CdO two-phase
nano crystalline grains, and the size of the crystalline grains gradually decreases while the CdO increases; all the ZnO / CdO has
high transmittance within a visible light range. The more important is that the ZnO / CdO composite film keeps the light-emission characteristic of ZnO, namely the conventional
ultraviolet light-emission characteristic is presented, and the position of a
photoluminescence peak is not changed; besides, the optical characteristic of the ZnO is maintained, the ZnO / CdO composite film has low resistivity, and the resistivity can reach 10-2-10-3
omega.cm, which is close to the resistivity of a pure CdO film.