The invention provides a small
divergence angle
ridge-type
laser device and manufacturing method therefor. The
laser device comprises an epitaxial structure and a
ridge waveguide structure formed on the epitaxial structure, wherein the
ridge waveguide structure comprises a parallel
gain region and a
light field mode expanding region that are orderly arranged along a light emitting direction, width of the
light field mode expanding region gradually increases along the light emitting direction, a narrow end of the
light field mode expanding region is connected with the parallel
gain region, width of the narrow end of the light field mode expanding region equals width of the parallel
gain region, the parallel gain region is 100 to 300 um in length, and the light field mode expanding region is 10 to 150 um in length. According to the small
divergence angle ridge-type
laser device and the manufacturing method therefor, no adjustment of the epitaxial structure is needed, no new epitaxial technology or technology process is needed, increase of a
threshold current can be controlled in a restrained way, output power of a
semiconductor laser device cannot be limited, output power can be improved by more than 10%, and main parameter performance during utilization can be improved to a certain extent.