50results about How to "No reduction in yield" patented technology

The present invention discloses the preparation process of antioxidant silicon carbide coating on the surface of graphite for nuclear reactor. The preparation process includes first coating polycarbosilane (PCS) solution on the surface of substrate to form PCS coating after volatizing solvent; and high temperature cracking the PCS coating in protecting gas containing Si while regulate cracking temperature and cracking atmosphere independently to realize required C/Si ratio in silicon carbide. Adding gas containing Si component into the cracking atmosphere can make cracked PCS to react with gas containing Si component to avoid free carbon in prepared SiC while maintaining the ceramic yield.

The present invention provides a pewter bump manufacturing method comprising the following steps: to deposit an under bump metal layer on wafer; to form a photoresist layer on the under bump metal layer, and to form a photoresist opening by exposure and develop; to form a transitional pewter layer on the under bump metal layer located at the photoresist opening; to electroplate a wiping solder on the transitional pewter layer; to remove the photoresist and the under bump metal layer; to backflow the wiping solder to form pewter bump. The process of forming the transitional pewter layer is of an electroplating process, the electric current density is 0.1A/dm2 to 1A/dm2, and the time is 1-5 minutes. The density of the formed transitional pewter layer is 0.2um to 4um. The method of the present invention avoids bubble formation in pewter bump solder in electroplating process.

The invention discloses a method for improving the component uniformity of W elements in GH4720Li alloy. Pure metallic W is replaced with nickel-tungsten intermediate alloy, a smelting mode with vacuum induction smelting and two times of vacuum consumable smelting is adopted, and low-smelting-speed controlled smelting is adopted for the second time of vacuum consumable smelting. On the premise that the yield of cast ingots is not decreased, the W elements in the cast ingots are distributed more uniformly. The problem of component difference in all positions of the cast ingots due to nonuniform distribution of the W elements, and accordingly the forging process of the alloy is influenced is solved, and the method has important functions on improving the component uniformity of the W elements and the performance uniformity of forge pieces.

The embodiment of the invention provides a curved surface display panel, a manufacturing method and a display device, and relates to the technical field of displays. The problem that a substrate is prone to being broken is solved while the curved surface display panel is used for reducing or avoiding light leakage of a curved surface display, and therefore the defect rate in the production technology can be reduced. The curved surface display panel comprises an array substrate, a cassette aligning substrate, a liquid crystal layer located between the array substrate and the cassette aligning substrate and a first 0-0 double refraction layer located at the side, far away from the liquid crystal layer, of the array substrate and/or a second 0-0 double refraction layer located at the side, far away from the liquid crystal layer, of the cassette aligning substrate. The curved surface display panel is used for manufacturing the displays.

The invention provides a method for preparing milrinone, wherein the method comprises the following steps: with 4-methyl pyridine (SM) as a raw material, in ethyl acetate, generating 1-(4-pyridyl)-2-acetone (represented by the formula I); then under action of triethyl orthoformate, acetic acid and acetic anhydride, generating 1-ethoxy-2-(4-pyridyl)vinyl methyl ketone (represented by the formula II); and finally, under an alkaline condition, carrying out a reaction of 1-ethoxy-2-(4-pyridyl)vinyl methyl ketone with cyanoacetamide to generate milrinone. The method has the advantages of simple and efficient operation, mild reaction conditions, strong safety, easy control and relatively high yield, and is suitable for industrialized production.

The invention provides a low-silicon SAPO-34 molecular sieve as well as a preparation method and an application thereof. The preparation method of the low-silicon SAPO-34 molecular sieve comprises steps as follows: (1), guiding lyogel is prepared from a silicon source, an aluminum source, a phosphorus source, a seed crystal, a template agent and water through stirring and mixing at the temperature of 0-20 DEG C, and a seed crystal guiding liquid is prepared after the guiding lyogel is subjected to hydrothermal crystallization; (2), initial gel of the SAPO-34 molecular sieve is prepared from the silicon source, the aluminum source, the phosphorus source, the seed crystal guiding liquid, the template agent and water through stirring and mixing at the temperature of 0-20 DEG C; the initial gel of the SAPO-34 molecular sieve is subjected to low-temperature hydrothermal crystallization and high-temperature hydrothermal crystallization sequentially and then is subjected to aftertreatment, and the low-silicon SAPO-34 molecular sieve is prepared. According to the method, an inexpensive template agent can be used less or even cannot be used, and a product meeting requirements for crystallinity and purity is obtained without prolonging of crystallization time, and the preparation method of the low-silicon SAPO-34 molecular sieve is suitable for large-scale industrial production.

PURPOSE: A method for testing defects of a gray tone mask and a method for fabricating a gray tone mask are provided to prevent the generation of defects of a TFT substrate such as the short between a source and a drain, without decreasing the yield of the gray tone mask production. CONSTITUTION: A method for testing defects of a gray tone mask includes a step of extracting a reject of a mask having black and/or white defect of defect level beyond a predetermined allowance range. In the allowance range, a defect threshold value of the white defect is larger than that of the black defect. A gray tone part(13) is an area formed with a shield pattern(13a) below an exposure threshold value of light when using the gray tone mask. The gray tone part is a pattern corresponding to a channel part of a TFT substrate.

The invention discloses a method for continuously preparing an olaparib intermediate by a microchannel modular reaction device. The method comprises the following steps: performing reaction on a dichloromethane solution of 3-hydroxyisobenzofuran-1(3H)-ketone and a dichloromethane solution of dimethyl phosphate in a first microreactor, and performing liquid separation to obtain effluent of (3-oxo-1,3-dihydroisobenzyfuran-1-yl)dimethyl phosphate; performing reaction on the effluent, a dichloromethane solution of 2-fluorine-5-formyl benzene nitrile and a dichloromethane solution of triethylaminein a second microreactor to generate reaction liquid of 2-fluorine-5-(3-oxo-3H-isobenzofuran-1-yl methylene)benzyl cyanide; and performing reaction on the reaction liquid and a homogenous mixed solution which is obtained by stirring an ethanol solution of sodium hydroxide and hydrazine hydrate in a third microreactor and treating the effluent to obtain the olaparib intermediate 2-fluorine-5-[(4-oxo-3,4-dihydrodiazene-1-yl-)methyl]benzoic acid.

The invention relates to a method for preparing beta-menadione by using Ce < 4 + > as an oxidant, which comprises the following steps: step 1, preparing an electrolyzed ceric methanesulfonate solution, and dissolving beta-methylnaphthalene in a first organic solvent to obtain a beta-methylnaphthalene organic solution; step 2, adding a part of the ceric methanesulfonate solution into a reaction kettle as a priming solution; 3, carrying out a three times of constant temperature reaction, and 4, after the reaction is finished, filtering to obtain a beta-menadione filter cake; layering a filtrateto obtain an organic solvent oil phase layer and a cerium methanesulfonate water phase layer; and 5, extracting the beta-menadione filter cake with a first organic solvent, filtering, and layering thefiltrate to obtain a beta-menadione organic solution oil phase layer and a cerous methanesulfonate water phase layer. According to the method, a high-speed shearing emulsifying machine is adopted inthe oxidation process to strengthen mass transfer, so that the use of an emulsifying agent is avoided, and the problems of foam, electrolytic efficiency and long-term cyclic utilization enrichment inthe oxidation residual liquid aftertreatment and electrolysis process are solved.

The invention relates to an excellent high alloy man made diamond sand manufacturing, using powder catalyst and graphite dust compressed under super high pressure and temperature to synthesize diamond. The synthesized pressure is lowered 2-10% compared to common synthesized pressure, with requirement for temperature matching and regulation at the same time, temporary stopping pressure being 80-92% of the synthesized pressure, with a gap of 0. 10-0. 15MPa and time interval 120-180s and pressure maintaining time being 5-20s. The synthesized man made diamond grains are mainly 170/200, 200/230, 230/270, 270/325, with 325/400 and 400/500 even finer diamonds. It uses the alloy diamond powder catalyst and bar making process. It also designs a set of high temperature super pressure synthesis according to low temperature and low pressure for the special selection of temporary shut pressure. The newly established process realizes the good effect the product.

A semiconductor device is provided in which its security is fully ensured and its manufacturing yield is not lowered even if a data bit change occurs due to a malfunction or the like in the test mode control flag data stored in a nonvolatile memory. The semiconductor device comprises a nonvolatile memory (1) for storing a test mode control code into a predetermined address, a generator (3) for generating a fixed value indicating whether the test mode is disabled or enabled, and a Hamming distance decision circuit (4) for controlling the transfer to the test mode depending on whether the Hamming distance between the control code and the fixed value is less than or equal to a predetermined value or not.

The invention belongs to the field of inorganic synthesis and particularly relates to a sulfamic acid production apparatus and method. In specific conjunction with the characteristics and demands of asulfamic acid production process, setting manner and position of a feeding pipe of the sulfamic acid production apparatus are re-designed and reformed in specific manner; key process indexes and parameters in the reaction process are strictly controlled, consumption ratio and quantity of fuming sulfuric acid are decreased at the premise of not reducing product production quality; therefore, the technical problem is solved that high production cost is caused due to high consumption of fuming sulfuric acid in the prior art.

The invention provides a IrNi composite nano catalyst for catalyzing hydrazine borane to produce hydrogen and a preparation method thereof. The IrNi composite nano catalyst is prepared by using a soluble Ir source and a soluble Ni source as the metal precursors and La2O2CO3 as the supporter through a sodium hydroxide assisted co-reduction method under room temperature. The prepared IrNi compositenano catalyst has excellent catalytic performance on hydrogen production reaction using hydrazine borane and can efficiently catalyze the hydrazine borane to hydrolyze the boryl of the hydrazine borane and split the hydrazino of the hydrazine borane under 323K so as to achieve complete hydrogen production of the hydrazine borane, and the reaction transformation frequency (TOF) of the IrNi composite nano catalyst reaches up to 950 (mol H2mol metal<-1>h<-1>). The preparation method is simple to operate and promising in development prospect.

The invention relates to the technical field of semiconductor material processing, in particular to an adhesive for a high-temperature photoelectric semiconductor material and a preparation method thereof. The adhesive is prepared from the following raw materials in parts by weight: 25 to 50 parts of polyvinyl acetate emulsion, 40 to 60 parts of a filler, 0 to 1.0 part of a thickening agent, 1 to3.5 parts of a functional additive, 0.1 to 0.8 part of a dispersing agent, 0.1 to 0.8 part of a defoaming agent and 3 to 12 parts of a solvent. The adhesive has higher bonding strength on a stone milldisc; after the damaged part of the coating is brushed and repaired, the phenomenon of cracking or damage does not occur again after the coating is used for multiple times, the service life is remarkably prolonged and can be improved to 180 times per piece from 100 times per piece in the prior art, and the yield in semiconductor product production is not reduced after the coating is repaired.

The invention discloses a production process of 1,3-bis(2,4-diaminophenoxy)propane hydrochloride; based on an original production process, new steps are added in the production process: adding tap water into a reaction pot, starting to stir, then adding a 1,3-bis(2,4-diaminophenoxy)propane hydrochloride condensation product, heating up, then adding liquid caustic soda drop by drop, controlling the temperature and stirring, after stirring is finished, discharging and carrying out suction filtration while being hot, rinsing with clear water, rinsing to a specified pH value, pumping water out and centrifuging, and then drying. The production process can remove impurities fully dissolved in water while the product is not dissolved in water, so the product yield is not decreased, and besides, the impurities required to be controlled are removed.