Defect examining method of gray mask and mfg. method thereof

A technology for gray-tone masking and defect inspection, which is applied to the photolithographic process of patterned surfaces, semiconductor/solid-state device manufacturing, and illuminated markings, etc., which can solve short circuits, difficult correction accuracy, and lower gray-tone mask yields And other issues

Inactive Publication Date: 2004-10-06
HOYA CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] Even if the correction method as in the above-mentioned Patent Document 2 is used, there is a problem that it is very difficult to increase the correction accuracy to a level at which the corrected pattern has the same effect as the normal pattern, and the yield of the gray tone mask decreases.
On the other hand, as one of the defects that occur on the TFT substrate, for example, there is a short circuit between the source and the drain

Method used

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  • Defect examining method of gray mask and mfg. method thereof
  • Defect examining method of gray mask and mfg. method thereof
  • Defect examining method of gray mask and mfg. method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0033] (Example 1): Inspection of gray tone part

[0034] Use a gray tone mask to transfer the pattern onto the resist film, and use the simulation method to obtain the film thickness of the developed resist film (when the resist film corresponding to the light-shielding part is set to 100 and the gray tone corresponding resist film). The resist film corresponding to the gray tone part is ideally 40-50. In the defect inspection process of the conventional gray tone area, the defect threshold value is set as Defect inspection was performed with the black defect side being 50 and the white defect side being 40.

[0035] Then, defect inspection was performed by setting the defect threshold to 50 on the black defect side and 30 on the white defect side. As a result, the gray tone mask can be manufactured with high yield, and the defect of the TFT substrate does not occur.

Embodiment 2

[0036] (Example 2): Correction of gray tone mask

[0037] Such as figure 1 As shown in (1), in the gray tone part where a part of the pattern is missing and a white defect occurs, such as figure 1 As shown in (2), a correction pattern (referred to as a correction pattern on the white defect pattern side in the present invention) as a white defect pattern is applied by laser CVD in accordance with a normal white defect side defect threshold. The same defect inspection was performed on the gray tone portion of the gray tone mask corrected in this way using the same defect threshold as described above, and as a result, the defect level was included in the allowable range.

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PUM

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Abstract

PURPOSE: A method for testing defects of a gray tone mask and a method for fabricating a gray tone mask are provided to prevent the generation of defects of a TFT substrate such as the short between a source and a drain, without decreasing the yield of the gray tone mask production. CONSTITUTION: A method for testing defects of a gray tone mask includes a step of extracting a reject of a mask having black and/or white defect of defect level beyond a predetermined allowance range. In the allowance range, a defect threshold value of the white defect is larger than that of the black defect. A gray tone part(13) is an area formed with a shield pattern(13a) below an exposure threshold value of light when using the gray tone mask. The gray tone part is a pattern corresponding to a channel part of a TFT substrate.

Description

technical field [0001] The present invention relates to a defect inspection method of a gray tone portion of a gray tone mask used for manufacturing a thin film transistor substrate for a liquid crystal display device or the like. Background technique [0002] Thin-film transistor liquid crystal display devices (hereinafter referred to as TFT-LCDs) have the advantages of being easier to make thinner and having lower power consumption than CRTs, and are currently being rapidly commercialized. The TFT-LCD has the following schematic structure: a TFT substrate having a structure in which TFTs are arranged in each pixel arranged in a matrix, and red (R), green (G) and blue (B) arrays corresponding to each pixel are arranged. ) The color filters of the pixel pattern are overlapped under the intervention of the liquid crystal phase. For TFT-LCD, the number of manufacturing steps is large, and only the TFT substrate is manufactured using 5 to 6 photomasks. [0003] Under such cir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/13G02F1/136G03F1/70G03F1/84H01L21/00H01L29/786
CPCG09F7/18G09F13/0404G09F13/0413G09F2007/1843G09F2007/1847
Inventor 池边寿美
Owner HOYA CORP
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