186results about How to "Little temperature dependence" patented technology

A reciprocating-piston internal combustion engine having a hydraulic adjustment mechanism which is assigned to a connecting rod and which comprises at least one eccentric, for adjusting at least one variable compression ratio in at least one cylinder of the reciprocating-piston internal combustion engine by means of a change in an effective length of a connecting rod. Also proposed is a method for changing the effective length of a connecting rod.

The present invention provides an oxide magnetic material, which includes a primary phase of a hexagonal ferrite containing metallic elements Ca, R, Fe and M, where M represents at least one element selected from the group including Co, Ni and Zn, and R represents at least one element selected from the group including Bi and rare earth elements including Y, with La being essentially included in R; wherein the proportions of the metallic elements Ca, R, Fe and M with respect to the total amount of the metallic elements are from 1 to 13 atomic % for Ca, from 0.05 to 10 atomic % for R, from 80 to 95 atomic % for Fe, and from 1 to 7 atomic % for M. The present invention also provides ferrite particles, a bonded magnet, a sintered magnet, a process for producing them, and a magnetic recording medium, which contain the oxide magnetic material.

Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an Al_xIn_1-xSb mixed crystal layer formed on a substrate, and an InAs_xSb_1-x (0<x≦1) thin film conducting layer directly formed on the Al_xIn_1-xSb layer, in which the Al_xIn_1-xSb mixed crystal layer is a layer that exhibits higher resistance than the InAs_xSb_1-x thin film conducting layer or exhibits insulation or p-type conductivity, and its band gap is greater than the InAs_xSb_1-x thin film conducting layer, and the a lattice mismatch is +1.3% to −0.8%.

Composition containing, based in each case on its total weight,

• • A) 50.0% by weight to 99.5% by weight of at least one (meth)acrylate (co)polymer and
  • B) 0.5% by weight to 50.0% by weight of at least one copolymer obtainable by polymerisation of a monomer mixture comprising
    • i. 70% by weight to 92% by weight of a vinylaromatic monomer and
    • ii. 8% by weight to 30% by weight of acrylonitrile or methacrylonitrile or mixtures thereof and
    • iii. 0% by weight to 22% by weight of at least one further monomer, the composition having a haze according to ASTM D1003 of less than 2.0% at 23° C. and a haze according to ASTM D1003 of less than 4.0% at 40° C. and the composition containing at least one (meth)acrylate (co)polymer a) having a solution viscosity in chloroform at 25° C. (ISO 1628—part 6) of greater than 55 ml/g.

The mouldings obtainable from the composition are distinguished in particular by improved stress cracking resistance and are suitable in particular for coverings, finishes or films.

The invention relates to a composition containing, in relation to the total weight of said composition, A) between 50.0% by weight and 99.5% by weight of at least one (meth)acrylate (co)polymer and B) between 0.5% by weight and 50.0% by weight of at least one copolymer, obtained by the polymerisation of a monomer mixture consisting of i. between 70% by weight and 92% by weight of a vinyl aromatic monomer and ii. between 8% by weight and 30% by weight of acryl nitrile or methacryl nitrile or mixtures thereof iii. between 0% by weight and 22% by weight of at least one other monomer, the composition having at 50° C. a ΔE of less than 0.15, ΔE being defined according to the relationship (1): (1) in which ΔL*: the modification of the colour co-ordinates L* compared with the colour co-ordinates L* at 23° C., Δa*: the modification of the colour co-ordinates a* compared with the colour co-ordinates a* at 23° C., Δb*: the modification of the colour co-ordinates b* compared to the colour co-ordinates b* at 23° C., and the composition contains at least one (meth)acrylate (co)polymer a) with a solution viscosity in chloroform at 25° C. (ISO 1628 part 6) greater than 55 ml/g. The moulded bodies that can be obtained from the composition are characterised in particular by improved stress cracking resistance and are suitable in particular for use in coatings, paints or films.

The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline silicon layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.

The invention provides a phosphor, a light emitting device and a white light emitting diode. The phosphor includes a compound represented by formula (1), and Eu as an activator. aM12O bM2O cM3O2 (1) [In the formula (1), M1 is at least one selected from the group consisting of Li, Na, K, Rb and Cs, and M2 is selected from the group consisting of Ca, Sr, Ba, Mg and At least one selected from the group consisting of Zn, M3 is at least one selected from the group consisting of Si and Ge, 0.1≦a≦1.5, 0.8≦b≦1.2 and 0.8≦c≦1.2, wherein, when M1 is Li , when M3 is Si and a=b=c=1, M2 is not Sr alone. ]

A magneto-resistive layer system, in which a layer arrangement is provided in an environment of a magneto-resistive layer stack working on the basis of the GMR effect or the AMR effect, in particular the layer arrangement generating a resulting magnetic field that acts upon the magneto-resistive layer stack. The layer arrangement has a first magnetic layer and a second magnetic layer, which are separated from one another by a non-magnetic intermediate layer and are ferromagnetically exchange-coupled via the intermediate layer. Furthermore, a sensor element having such a layer system is provided, particularly for the detection of magnetic fields with respect to their strength and/or direction.

An electromagnetic wave absorber comprising (a) soft ferrite having its surface treated with a silane compound having no functional group, (c) magnetite and (d) silicone, or comprising (a) soft ferrite having its surface treated with a silane compound having no functional group, (b) flat soft magnetic metal powder, (c) magnetite and (d) silicone, which electromagnetic wave absorber excels in electromagnetic wave absorption, heat conduction and flame resistance, exhibiting less temperature dependence, and which electromagnetic wave absorber is soft, excelling in adhesion strength and further excelling in high resistance high insulation properties and in energy conversion efficiency being stable in MHz to 10GHz broadband frequency. There is further provided a laminated electromagnetic wave absorber comprising the above electromagnetic wave absorber overlaid with a reflection layer of conductor, which laminated electromagnetic wave absorber can be closely stuck onto an unwanted electromagnetic wave emission source such as a high-speed operating device, having such an adhesive strength that even when stuck to a horizontal glassy-surface ceiling face of resin-made cage, would not fall.

A piezoelectric actuator (1) comprising a piezoelectric element (2) having a pair of electrodes formed on the surface of a piezoelectric ceramic as a drive source. The piezoelectric actuator (1) satisfies at least one of following requirements (a) to (c). (a) Variation width W_C of apparent dynamic capacitance C (F) due to temperature variation falls within +-11% in a specific temperature range of -30 to 80 DEG C. (b) Variation width W_L of displacement L (mum) due to temperature variation falls within +-14% in a specific temperature range of -30 to 80 DEG C. (c) Variation width W_L/C of L/C due to temperature variation falls within +-12% in a specific temperature range of -30 to 80 DEG C, assuming that the apparent dynamic capacitance is C (F) and the displacement is L (mum).

The invention belongs to the technical field of microporous rubber and discloses a microporous rubber base plate and a preparation process thereof. The microporous rubber base plate has the major technical characteristic that the microporous rubber base plate body is prepared from the following components in parts by weight: 100 parts of ethylene-propylene-diene rubber, 6-18 parts of polyethylene glycol mixture, 60-100 parts of a filling material, 30-60 parts of alkane oil, 6-12 parts of a foaming agent, 2.5-5.5 parts of a vulcanizing agent and 2-5.5 parts of an accelerant. According to the microporous rubber base plate, an evenly diffused multi-phase structure is formed by mechanically blending low-Mooney EPDM and high-Mooney EPDM, and in combination with benzenesulfonic acid formed in the reaction process of neutralizing the foaming agent 4,4-oxodibenzenesulfonyl hydrazide by use of the polyethylene glycol mixture, the foaming ratio can be increased. In addition, accessories carbon black excellent in reinforcement property and porous diatomite filler excellent in aging property and light in weight are adopted, and consequently, the microporous rubber base plate has such properties as high strength, low rigidity and low temperature dependency.

The invention provides a reference current circuit which can reduce temperature dependency of reference current even though in the situation of using a resistor of a resistance provided with very low temperature dependency. The reference current circuit comprises: a reference voltage V receiving temperature compensation and a noninverting amplifier circuit 110 generating a voltage V on an output point; a current source circuit 120 consisted of a transistor Q1 which is connected to the output point via the resistor and a transistor Q2 which receives a voltage equal to a voltage V generated among terminals of Q1 and generating related circuit. The circuit 110 (i) comprises: a third transistor Q3. A voltage V generated among the terminals of the Q3 is provided with the same temperature property with V, and is structured to make V is the sum of (a) a temperature compensation voltage component based on the reference voltage V and (b) a voltage component equal to the voltage V.

A quantum nanostructure semiconductor laser is provided that does not use a buried structure defined by etching and regrowth processes in the prior arts, and can be manufactured using a procedure that is simple and has good reproducibility. This helps to reduce the threshold current and provides good lasing wavelength stability. The laser has a stripe-shaped ridge with a plurality of V-grooves formed on a compound semiconductor substrate in the direction of laser beam emisson, with the V-grooves being arrayed in parallel, with each V-groove extending orthogonally to the direction of laser beam emission. On the ridge, an optical waveguide is provided that comprises a lower cladding layer, a plurality of quantum wires and an upper cladding layer formed in order by a crystal growth process. The quantum wires are formed to a finite length corresponding to the stripe width of the laser beam, and are each located at a position corresponding to a V-groove, thereby constituting the laser active region. The optical waveguide is trapezoidal in shape, and has a peripheral sidewall that is at least as high as a height at which the quantum wires are located, and is exposed or covered only by an insulation layer.