57results about How to "Extended crystallization time" patented technology

The invention relates to a low-temperature polycrystalline silicon thin film transistor. The low-temperature polycrystalline silicon thin film transistor comprises a substrate, a buffer layer formed on the substrate, a semiconductor layer formed on the buffer layer, a gate insulation layer formed on the buffer layer and the semiconductor layer, gate electrodes formed on the gate insulation layer, a dielectric layer formed on the gate insulation layer and the gate electrodes, and a passivation layer formed on the dielectric layer; first contact holes and second contact holes are formed in the passivation layer, the dielectric layer and the gate insulation layer, a source electrode and a drain electrode are respectively formed on the first contact holes, and a source electrode and a drain electrode are respectively formed on the second contact holes; and the semiconductor layer is a low-temperature polycrystalline silicon layer, and a reflection layer and / or a heat insulation layer are further disposed between the buffer layer and the semiconductor layer. The invention further relates to a preparation method of the thin film transistor, and the thin film transistor is prepared mainly through utilization of deposition, photoetching, etching, laser irradiation and the other process methods. According to the low-temperature polycrystalline silicon thin film transistor, the large dimensions of polycrystalline silicon grains can be obtained, and obtaining of the large electron mobility is facilitated.

An electromagnetic valve type urea solution injector relates to an injector, and comprises an electromagnetic valve type injecting body, and an injecting nozzle, wherein the electromagnetic valve type injecting body and the injecting nozzle are connected into a whole through an injecting nozzle connecting rod; the injecting nozzle comprises a valve seat, a sealing steel ball mounted at a valve, aspraying orifice plate provided with a spraying orifice and mounted at the front end of the valve, and a step hole is formed between the front end part of the valve seat and the spraying orifice plate to form a turbulent cavity A ; a heat-insulating sleeve is arranged on an excircle at the front end of the valve seat for preventing heat energy of a tail gas discharge pipe from passing into the injecting nozzle; and a single-orifice atomization structure is arranged in the injecting nozzle. The electromagnetic valve type urea solution injector can work in high-temperature and high-speed gas with long-term stability and very high reliability, has low possibility of blockage, and better solves the problem that the spraying orifice can be blocked up by urea crystals. The invention also has the advantages of low manufacturing cost, short maintenance time of the product, reasonable structure and convenience in installation, etc.

The invention provides a method for preparing polycrystalline silicon thin-film solar cell and a device thereof. The method comprises the steps of providing a substrate; depositing a front electrode and conducting etching on the substrate; depositing a non-crystalline silicon film on the front electrode; irradiating the non-crystalline silicon film to allow the non-crystalline silicon film to reach the melting point temperature thereof until the non-crystalline silicon film is melted to formed a molten layer with a certain depth; reducing the temperature difference between the non-crystallinesilicon film and the substrate when the non-crystalline silicon film crystallizes, so as to obtain a polycrystalline silicon film with larger crystal grains; etching the polycrystalline silicon film;depositing a back electrode on the polycrystalline silicon film; etching the polycrystalline silicon film and the back electrode; and packaging the substrate, the front electrode, the polycrystallinesilicon film and the back electrode to obtain a solar cell. The obtained solar cell by using the inventive method has low cost and high photoelectric transformation efficiency.