33results about How to "Enhance the quantum effect" patented technology

The invention relates to methods for manufacturing semiconductor devices. Processes are disclosed for implementing suspended single crystal silicon nano wires (NWs) using a combination of anisotropic and isotropic etches and spacer creation for sidewall protection. The core dimensions of the NWs are adjustable with the integration sequences: they can be triangular, rectangular, quasi-circular, or an alternative polygonal shape. Depending on the length of the NWs, going from the sub-micron to millimeter range, the NWs may utilize support from anchors to the side, during certain processing steps. By changing the lithographic dimensions of the anchors compared to the NWs, the anchors may be reduced or eliminated during processing. The method covers, among other things, the integration of Gate-All-Around NW (GAA-NW) MOSFETs on a bulk semiconductor. The GAA structure may consist of a silicon core fabricated as specified in the invention, surrounded by any usable gate dielectric, and finally by a gate material, such as polysilicon or metal. The source and drain of the GAA-NW may be connected to the bulk semiconductor to avoid self heating of the device over a wide range of operating conditions. The GAA-NW MOS capacitor can also be used for the integration of a Gate-All-Around optical phase modulator (GAA modulator). The working principle for the optical modulator is modulation of the refractive index by free carrier accumulation or inversion in a MOS capacitive structure, which changes the phase of the propagating light.

The invention provides an LED package. The LED package at least comprises a support, a wafer, weld lines and a sealing component, wherein the support is used for supporting the wafer and the weld lines, the wafer is used for emitting light capable of effectively exciting fluorescent powder or quantum dots, the weld lines are used for connecting the wafer and the support, the quantum dots are distributed in the sealing component, and the sealing component is located in a path of light emitted from the wafer, is in the shape of a lens and is used for wrapping the wafer and the support. The sizes of the quantum dots can be changed to control emission spectra of the quantum dots; the LED package has very good stability; because wide excitation spectra and narrow emission spectra are provided, the color rendering index of the LED package is effectively improved; the LED package is high in light emitting efficiency.

The invention belongs to the technical field of photoelectric materials and specially, relates to a preparation method of a zinc-doped titanium dioxide nano-tube array. The preparation method comprises the following steps that 1, an electrolyte of a HF aqueous solution having HF content of 0.3 to 1.0 wt%, an anode of pure titanium foil subjected to surface pretreatment and a cathode of a Pt sheet undergo an electrochemical anodization reaction under direct voltage of 10 to 50V to produce a titanium dioxide nano-tube array; and the titanium dioxide nano-tube array as a cathode, an anode of a platinum sheet and an electrolyte of a Zn(NO3) solution having concentration of 0.1 to 0.5mol/L undergo an electrochemical deposition reaction under direct voltage of 0.3 to 1.0V so that zinc is added into titanium dioxide nano-tube layers and the zinc-doped titanium dioxide nano-tube array is obtained. The preparation method provided by the invention has the advantages that ion implantation time is short; and doped ions Zn<2+> can enter into a titanium dioxide nano-tube under a electric field force and capillary action so that the zinc-doped titanium dioxide nano-tube array having good photoelectric properties and a light absorption range widen to a visible light range is prepared.

The invention discloses a nitride light-emitting diode. The nitride light-emitting diode sequentially comprises a substrate, N type nitride, a multi-quantum well, V-shaped pits, first AlN/AlxGa1-xN superlattices, local area quantum states formed by In quantum dots/InN quantum dots, a composite structure formed by second AlN/AlxGa1-xN superlattices, P type nitride and a P type contact layer, the first AlN/AlxGa1-xN superlattices, the local area quantum states formed by the In quantum dots/InN quantum dots and the composite structure formed by the second AlN/AlxGa1-xN superlattices are deposited in the V-shaped pits of the multi-quantum well, an upper AlN/AlxGa1-xN superlattice structure and a lower AlN/AlxGa1-xN superlattice structure in each V-shaped pit block dislocation in the corresponding V-shaped pit and stop the dislocation from continuing extending upwards, dislocation is effectively reduced, nonradiative recombination is lowered, electric leakage is reduced, ESD is improved, and light-emitting efficiency and intensity are improved; by means of the mixed local area quantum state formed by the In quantum dots/InN quantum dots between the two superlattice structures, the quantum effect of the quantum well is improved, and light-emitting efficiency and intensity are further improved.

The invention provides a novel composite photocatalyst Ag-TiO2/SBA-16 (Santa Barbara USA-16) and a synthesis method thereof, relates to a novel composite photocatalyst and a synthesis method thereof, and aims to solve the problems of low solar utilization, low quantum efficiency, poor adsorption performance, easiness in agglomeration inactivation and difficulty in reclamation of TiO2. The novel composite photocatalyst Ag-TiO2/SBA-16 is prepared from butyl titanate, AgNO3, absolute ethanol, acetic acid, ethyl acetate and a mesoporous molecular sieve SBA-16. The synthesis method of the novel composite photocatalyst Ag-TiO2/SBA-16 comprises the following steps: 1, dissolving; 2, uniformly mixing; 3, adding a vector; 4, washing and drying; and 5, roasting. The method is mainly used for synthesizing the novel composite photocatalyst Ag-TiO2/SBA-16.

The invention provides a graphene-metal modified nano heavy anti-corrosion coating and a preparation method thereof. The coating is prepared from, by mass, 3%-5% of carbon fluoride, 2%-4% of graphene,2%-4% of titanium powder, 2%-4% of zinc powder, 2%-4% of niobium powder, 2%-4% of nickel powder, 2%-4% of iron powder, 1%-1.5% of auxiliaries, 16%-20% of diluents, 6%-8% of dispersing agents and 48%-55% of epoxy resin. The particle sizes of the carbon fluoride, the graphene, the titanium powder, the zinc powder, the niobium powder, the nickel powder and the iron powder in the anticorrosive paintare 700-800nm. The anti-corrosion coating disclosed by the invention has very good ultraviolet-proof performance and anticorrosive performance.

The invention relates to a magnetic tunnel junction with a quantum effect, and a spin diode and a spin transistor comprising the magnetic tunnel junction. The magnetic tunnel junction comprises a first reference layer, a first barrier layer, a free layer, and a second barrier layer, wherein the first reference layer is formed by a magnetic conductive material and has a fixed magnetizing direction; the first barrier layer is arranged on the first reference layer and formed by an insulating material; the free layer is arranged on the first barrier layer, and formed by a magnetic conductive material, and the magnetizing direction of the free layer can respond to an outer magnetic field to be freely changed; and the second barrier layer is arranged on the free layer and formed by an insulating material, wherein the insulating materials of the first barrier layer and the second barrier layer both comprise a spinel-like crystal structure.

The present invention provides a light-emitting device with a quantum well structure comprising a barrier layer containing aluminum, gallium, indium and arsenic, which reduces the leak current flowing in the buried layer. The buried layer includes first and second buried layers stacked to each other and covers the sides of the quantum well structure. The barrier layer induces a tensile stress to lower the band gap energy, to increase the band gap wavelength λ_BG greater than or equal to 1.0 μm.

The invention relates to a method using a low temperature carbothermic method to prepare a solid solution of nanometer calcium oxide based rare earth mixed with composite oxide. The method has the technical proposal that 0.25M to 0.5M of Ca(NO3)2, 0.5M to 1.0M of rare earth nitrate and 0.625 M to 1.25M of CaAC2 solution are prepared, and the same amount of solution is taken to be well mixed; distilled water is added, and the solution is further dissolved and well mixed; the solution is heated to 140 DEG C to 160 DEG C with an electric jacket, and after self-propagating combustion happens to release large amounts of brown gas and generate fluffy powder, a proper amount of precursor powder is weighted to be put into a porcelain boat; after the proper amount of precursor powder is calcined for 1 to 2 hour(s) at 750 DEG C to 900 DEG C with a muffle furnace, the solid solution of nanometer calcium oxide based rare earth mixed with composite oxide is obtained. In the invention, a new synthetic route and technology is adopted, thereby the method has the advantages of comparatively lower cost, simple technology, mild conditions, short experimental period and time and energy conservation. Simultaneously, utilizing the analysis of a modern instrument can indicate that the synthesized solid solution of nanometer calcium oxide based rare earth mixed with composite oxide is provided with a nanometer structure, and the size is uniform, thereby providing possibility for improving the application in the field of tail gas treatment and environmental friendly plastics.

The invention belongs to the technical field of photoelectricity, and particularly relates to a solid-state perovskite cluster and a preparation method thereof and a photoelectric device. The preparation method of the solid-state perovskite cluster comprises the following steps: preparing a precursor solutionfrom organic carboxylic acid, an organic amine ligand and a perovskite raw material; mixing the precursor solution with an anti-solvent to obtain a perovskite cluster solution with a passivated surface; and adding a shell forming substance into the perovskite cluster solution to form a shell layer on the surface of the perovskite cluster, and separating to obtain the solid-state perovskite cluster with the core-shell structure. According to the preparation method of the solid-state perovskite cluster, organic carboxylic acid and an organic amine ligand are added into a precursor solution, and a shell layer is formed on the surface of the perovskite cluster, so that the perovskite cluster can be separated and separated out in a solid state, and the perovskite cluster has the stability of resisting external environmental factors such as water and oxygen, and the application prospect of the perovskite cluster in photoelectric devices is improved.

A preparation method of nano titania for air purification comprises steps as follows: titanium iron ore is selected and processed into powder; concentrated sulfuric acid is added to the powdery titanium iron ore for acidolysis; still standing is performed after the ore is dissolved through acidolysis, slag is removed through filtration, and a primary filtered titanium liquid A is obtained; the titanium liquid A is cooled to the normal temperature and crystalized to separate iron dichloride tetrahydrate, and a secondary filtered titanium liquid B is obtained through filtration; an oxidizing agent is added to the secondary filtered titanium liquid B, and a solution D is obtained; cerium nitrate is added to the solution D, sodium hydroxide is added, the PH is adjusted to be alkaline, and sufficient mixing is performed; activated carbon fiber is added, soaking is performed under the ultrasonic condition, and a mixed liquid D is obtained; the mixed liquid D is aired, calcined and ground into powder, and cerium-doped nano titania powder is obtained. The nano titania is small in particle size and good in dispersity, the quantum effect of the nano titania is improved, and the air purification effect is improved; the reaction process is environmentally friendly and pollution-free.

The invention discloses a negative photoresist as well as a preparation method and application thereof. The negative photoresist is prepared from the following components in parts by mass: 30 to 40 parts of a resin matrix, 0.4 to 0.5 part of a photoinitiator, 0.01 to 0.05 part of an active sensitizing aid, 0.01 to 0.02 part of a free radical initiator, 0.02 to 0.05 part of an acid diffusion inhibitor, 2 to 7 parts of an active diluent and 8 to 13 parts of a solvent, wherein the resin matrix is composed of dicyclopentadiene oxyethyl acrylate and epoxy acrylic resin, and the mass ratio of the dicyclopentadiene oxyethyl acrylate to the epoxy acrylic resin is (20-25): (10-15). The negative photoresist provided by the invention has good film-forming property, thermal stability and etching resistance.

The invention relates to a thermosensitive detector structure and an integration method thereof. The thermosensitive detector structure comprises a substrate with a readout circuit structure, and a dielectric layer, a P-type doped germanium layer, an intrinsic layer and an N-type doped germanium layer are sequentially stacked on the substrate. The interior of the dielectric layer is provided with a cavity structure, the intrinsic layer is of an n-layer structure formed by alternately stacking Ge1-xSnx layers and Ge1-ySiy layers, x is greater than 0 and smaller than or equal to 0.3, y is greater than 0 and smaller than or equal to 0.3, and n is greater than or equal to 2. The detector is provided with the P-I-N suspended hollow structure, light can be reflected into the P-I-N structure in the hollow structure after being absorbed, and compared with a traditional detector, the light absorption rate is remarkably improved.