Thermosensitive detector structure and integration method thereof
An integrated method and detector technology, applied in the direction of electric radiation detectors, semiconductor devices, sustainable manufacturing/processing, etc., can solve problems such as insufficient performance and low infrared light absorption rate, reduce the length of interconnection lines, simplify Integrate the process and enhance the effect of photoelectric conversion efficiency
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[0058] Embodiment 1 A heat-sensitive detector structure
[0059] Make the supporting substrate:
[0060] Provide a substrate 101 with a readout circuit structure, and then deposit a first silicon oxide layer 102 on the surface of the readout circuit structure, to obtain the following figure 2 structure shown.
[0061] An amorphous silicon layer 103 is deposited on the surface of the first silicon oxide layer 102 to obtain the following image 3 structure shown.
[0062] Perform photolithography and etching on the amorphous silicon layer 103, remove part of the amorphous silicon, so that it only covers part of the surface of the first silicon oxide layer 103, and obtain the following: Figure 4 structure shown.
[0063] Deposit the second silicon oxide layer 104, the second silicon oxide layer 104 borders the first silicon oxide layer 102 and wraps the amorphous silicon layer to obtain the following Figure 5 For the structure shown, a planarization process (such as CMP) ...
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