The invention relates to an integrated structure of a
detector and a method thereof. The integration method of the
detector comprises the following steps: manufacturing an
electronic circuit structure on a first substrate, and then forming a first
dielectric layer on the surface of the
electronic circuit structure to obtain a substrate A; sequentially forming a
germanium buffer layer, a stacking intrinsic layer, a P-type doped
germanium layer and a second
dielectric layer on the surface of a second substrate from bottom to top to obtain a substrate B, wherein the stacked intrinsic layer is formed by alternately and repeatedly stacking Ge<1-x>Snx
layers and Ge<1-y>Siy
layers for n times, x is greater than 0 and less than or equal to 0.3, y is greater than 0 and less than or equal to 0.3, and n is greater than or equal to 1; bonding the substrate A and the substrate B; removing the second substrate and the
germanium buffer layer after bonding, forming an N-type doped germanium layer on the surface of the stacked intrinsic layer, and manufacturing a
detector structure; and enabling the
electronic circuit structure and the detector structure are interconnected. According to the invention, the substrate on which the detector is not manufactured is bonded in the electronic circuit structure substrate, so that the integration process is simplified, the integration level is improved, and the problem that accurate alignment cannot be realized is solved.