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Thermosensitive detector structure and integration method thereof

An integration method and detector technology, applied in electrical radiation detectors, semiconductor devices, photovoltaic power generation, etc., can solve the problems of insufficient performance, low infrared light absorption rate, etc., to reduce the length of interconnect lines, simplify the integration process, The effect of improving system performance

Pending Publication Date: 2021-10-19
GUANGDONG GREATER BAY AREA INST OF INTEGRATED CIRCUIT & SYST
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing heat-sensitive detectors are limited by the low absorption rate of infrared light, and their performance is insufficient

Method used

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  • Thermosensitive detector structure and integration method thereof
  • Thermosensitive detector structure and integration method thereof
  • Thermosensitive detector structure and integration method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Embodiment 1 A heat-sensitive detector structure

[0059] Make the supporting substrate:

[0060] Provide a substrate 101 with a readout circuit structure, and then deposit a first silicon oxide layer 102 on the surface of the readout circuit structure, to obtain the following figure 2 structure shown.

[0061] An amorphous silicon layer 103 is deposited on the surface of the first silicon oxide layer 102 to obtain the following image 3 structure shown.

[0062] Perform photolithography and etching on the amorphous silicon layer 103, remove part of the amorphous silicon, so that it only covers part of the surface of the first silicon oxide layer 103, and obtain the following: Figure 4 structure shown.

[0063] Deposit the second silicon oxide layer 104, the second silicon oxide layer 104 borders the first silicon oxide layer 102 and wraps the amorphous silicon layer to obtain the following Figure 5 For the structure shown, a planarization process (such as CMP) ...

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Abstract

The invention relates to a thermosensitive detector structure and an integration method thereof. The thermosensitive detector structure comprises a substrate with a readout circuit structure, and a dielectric layer, a P-type doped germanium layer, an intrinsic layer and an N-type doped germanium layer are sequentially stacked on the substrate. The interior of the dielectric layer is provided with a cavity structure, the intrinsic layer is of an n-layer structure formed by alternately stacking Ge1-xSnx layers and Ge1-ySiy layers, x is greater than 0 and smaller than or equal to 0.3, y is greater than 0 and smaller than or equal to 0.3, and n is greater than or equal to 2. The detector is provided with the P-I-N suspended hollow structure, light can be reflected into the P-I-N structure in the hollow structure after being absorbed, and compared with a traditional detector, the light absorption rate is remarkably improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a heat-sensitive detector structure and an integration method thereof. Background technique [0002] Thermal detectors are devices that use the principle of thermal effects generated by infrared radiation to irradiate objects. Also known as a thermistor, the material's electrical conductivity changes in response to the absorption of infrared photons. In the case of photons, electrons are gained through transitions from the valence band to the conduction band when infrared photons emit light. Imaging with this detector provides high resolution in the short-wave infrared band due to the photonic principle, but also absorbs longer infrared wavelengths. The influence of the absorption rate of infrared light directly affects the performance of the detector such as sensitivity and detection rate. The existing heat-sensitive detectors are limited by the low absorption rate of inf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0232H01L31/028H01L31/105H01L31/18G01J5/20G01J5/24
CPCH01L31/02327H01L31/028H01L31/105H01L31/1804G01J5/20G01J5/24Y02E10/547Y02P70/50
Inventor 亨利·H·阿达姆松戚璇焦斌斌王桂磊
Owner GUANGDONG GREATER BAY AREA INST OF INTEGRATED CIRCUIT & SYST
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