85 results about "Surface chemical reaction" patented technology

The invention provides a bismuth-based catalyst for electrocatalytic CO2 reduction to form formic acid and a preparation method and application of the bismuth-based catalyst. In a water phase system,the bismuth catalyst has the characteristic of electrocatalytic CO2 reduction, and is superior to similar formic acid producing electrode materials in activity and selectivity. Compared with bulk bismuth metal, the bismuth-based catalyst with a nanometer structure is larger in specific surface area and has rich surface chemical reaction sites, specific exposed crystal faces and diversified size effects, thereby being better in catalytic activity as shown in an electrocatalytic CO2 reduction system. The nanometer-bismuth-based catalyst is environmentally friendly, low in cost, efficient and stable, the conversion efficiency of electrocatalytic CO2 reduction to form the formic acid through the nanometer-bismuth-based catalyst can be up to more than 98%, and the nanometer-bismuth-based catalyst has important practical significance for environmental protection and resource utilization.

The invention provides a method for preparing a film metal micro device on the surface of PDMS by chemical plating. The method comprises: a layer of polyacrylic acid (PAA) is selectively grafted to be formed on a designated area of the surface of PDMS through the photochemical reaction by adopting photolithographic masks; after a series of surface chemical reactions such as amination, absorption, reduction and the like, a nano-scale gold particle catalytic center required by chemical plating is formed in an area irradiated by UV light; finally, by selectively carrying out chemical plating on metal by means of nano-gold catalysis, the metal film device is formed on the surface of the PDMS irradiated by the UV light. By the method, the integrated metal film is prepared on the surface of the PDMS sheet and on the inner surface of the channel / cavity of the PDMS in order to prepare such micro devices as a micro-heater, a microelectrode, a microsensor, a micro shielding device and the like, which take the PDMS as a substrate, and to integrate circuits. The method is characterized in that the process is simple and easy to practice and clean laboratories and high-cost metal evaporation and deposition processes are unnecessary. The prepared metal device has the advantages of high accuracy and low cost.

The invention discloses a preparation method of a graphite alkenyl self-assembly multilayer nanometer lubricating film. The preparation method comprises utilizing a self-assembly method to prepare an amino silane coupling agent film on the surface of monocrystalline silicon substrate processed by hydroxylation; then utilizing surface chemical reaction to assemble graphite oxide on the surface of the amino silane coupling agent film; and further, utilizing hydroxyl on the surface of the graphite oxide to assemble silane molecules with low surfaces to the surface of the graphite oxide. The preparation method has the advantages of being simple in device, low in cost, simple in preparation process and easy to operate. The results of friction and abrasion tests show that a graphene lubrication film and the monocrystalline silicon substrate have good combination performance, good friction performance and good abrasion resistance and can serve as effective means for protecting and lubricating materials in micro-machines.

The present invention relates to an inductively-coupled plasma device, including inductively-coupled plasma cavity body, inductively-coupled coil and coil rotating device. The inductively-coupled coil is positioned over the inductively-coupled plasma cavity body, the inductively-coupled coil is mounted on the coil rotating device, the coil rotating device is fixed on the inductively-coupled plasma cavity body, the rotation of said coil rotating device can drive the inductively-coupled coil and make it be rotated, the coil rotating device is formed from motor, fixed plate and support. Said invention can make the plasma produced in reaction cavity chamber be uniformly distributed, so that the wafer processing quality and stability can be greatly raised.

Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

The invention relates to a high-spatial-resolution photoemission electron microscope (PEEM) with an ultraviolet or deep ultraviolet laser light source, comprising an ultraviolet or deep ultraviolet laser and a PEEM, wherein an optical path of laser emitted by the ultraviolet or deep ultraviolet laser is vertically incident to a sample stage of the PEEM. (Deep) ultraviolet laser with fixed wavelength or continuous wavelength and energy higher than 5eV is applied to the PEEM; the laser arouses photoelectrons on the surface of a solid in a unique way of being vertically incident to the surface of a sample through a laser and PEEM connecting system; surface photoemission electrons are imaged by using an electron optical system so that surface image information is obtained; and dynamic processes including surface chemical reaction and a surface growth process on the surface of the solid are researched by applying the deep ultraviolet laser, so that high-spatial-resolution, in-situ and real-time research and observation of the dynamic processes of the surface are realized.

The invention discloses a preparation method of a ternary carbide nanobelt, and belongs to the field of nano material. The preparation method comprises following steps: a certain amount of a MAX phase material is reacted with an alkaline solutions; and separation, washing, and drying are carried out so as to obtain the ternary carbide nanobelt. The preparation method is simple; requirement on equipment is low; no expensive equipment is needed; the preparation method is green, and is friendly to the environment. The obtained ternary carbide nanobelt possesses a unique morphology structure, excellent electrical conductivity and mechanical properties, high surface chemical reaction activity, and excellent self lubricating performance and friction performance, can be adopted in energy storage field and friction field effectively, and possesses high practical value.