36 results about "Lattice deformation" patented technology

The invention discloses a device and method for testing performance degradation caused by transistor lattice deformation. The device for testing the performance degradation caused by the transistor lattice deformation comprises a base, a precise displacement platform, a cushion block, a carrier and a pressing block. The method for testing the performance degradation caused by the transistor lattice deformation comprises the following steps of (1) thinning a chip; (2) cutting the chip; (3) sticking the chip; (4) leading an electrode out of a transistor; (5) fixing the carrier; (6) testing the transistor before applying the stress; (7) applying the mechanical stress onto the chip; (8) testing the transistor under the stress; (9) judging whether the performance of the transistor degrades; and (10) obtaining the lattice deformation value when the performance of the transistor degrades. The device and method for testing the performance degradation caused by the transistor lattice deformation has the advantages of easily applying compression stress onto the chip, and being large in range of the applicable mechanical stress, good in chip bend uniform, simple and accurate in lattice tension amount calculation, and is suitable for analyzing the influence of the transistor lattice deformation on the performance of the transistor.

The invention discloses a multi-principal element alloy and a method for surface treatment of a titanium alloy. The multi-principal element alloy comprises, by mole, 18-30 parts of Zr, 18-30 parts of Ni, 18-30 parts of Si, 18-30 parts of Ta, 1-10 parts of Ti and 2-5 parts of CeO2. According to the method, a titanium alloy base material is cleaned and subjected to sand blasting roughening treatment, then plasma spraying equipment is used for spraying multi-principal element alloy powder on the surface of the titanium alloy base material, finally the plasma-sprayed surface is subjected to remelting treatment through a CO2 laser device, and a coating is obtained. The prepared multi-principal element alloy coating adopts characteristics of high-entropy effect, slow diffusion effect, nanophase reinforcement, super-high lattice deformation, cocktail effect and the like of the multi-principal element alloy, abrasion resistance and high temperature oxidation resistance of the titanium alloy can be remarkably improved, and titanium fire can be prevented.

The invention discloses a method of growing GaN-based luminescent crystalline membrane for molecular beam epitaxy, which dopes rare earth ions in the growth process to replace part of lattice site of Ga3+ and is characterized by comprising the following steps: doping III group element boron or aluminum in the raw material formula of the GaN crystalline membrane according to a certain ratio, wherein the III group element boron or aluminum enters into GaN lattice site via a mode of trivalent ion in the growth process; preparing ion radius difference between the rare earth ion and the Ga3+, wherein the molar ratio of the raw material formula is as follows: Ga:Re:A=(1-x-y):x:y, x represents rare earth metal, A represents III group element boron or aluminum, x is more than or equal to 0.1% andless than or equal to 10.0%, and y is more than or equal to 0.1x and less than or equal to x. In the invention, III group element boron or aluminum is doped with rare earth metal together according to a certain ratio so as to greatly improve lattice deformation of the GaN crystalline membrane caused by larger radius mismatch of Re3+ and Ga3+, and increase luminescent performance of the GaN crystalline membrane.

The Nd doped gadolinium gallium garnet laser (Nd:GGG) crystal has the material including gadolinium oxide, gallium oxide, neodymium oxide and cerium oxide in certain proportion prepared in two-step composing process. The Nd doped gadolinium gallium garnet laser crystal is grown in a Czochrolski process under the 98 % N2+2% O2 condition. The present invention solves the problem of doping Nd2O3 to cause lattice deformation, and the Nd:GGG crystal has raised radiation resistance and improved spectral and laser performance.

The invention provides a flowing atmosphere hot / cold impact sintering resistance furnace which is designed for inherent defects of an existing resistance sintering furnace and the requirement for a special sintering technology of research and development of new inorganic materials. The flowing atmosphere hot / cold impact sintering resistance furnace comprises a furnace shell and hearth, a heating body, a ventilation crucible, a ventilation objective table, a hollow ventilation supporting rod, a hollow exhaust rod, a sample supporting frame, a microcomputer time switch and an electrically-controlled ventilation switch. The microcomputer time switch controls the electrically-controlled ventilation switch to be switched on so that air can flow into a sample to be sintered on the sample supporting frame of the ventilation objective table in the ventilation crucible, the sintering temperature of the sample to be sintered is lowered, the sintering temperature of the sample to be sintered is made to fluctuate from 5 DEG C to 100 DEG C periodically, and the periodical cold / hot impact function is generated for the sample to be sintered. The flowing atmosphere hot / cold impact sintering resistance furnace has the advantages that crystalline grains of the sintered sample can be made to grow coordinately in the sintering process, the crystalline grains are even in size, the phase is stably and evenly distributed, the density is high, the porosity is low, lattice deformation is lowered, and performance is better.