Growth method of neodymium-doped gadolinium gallium garnet laser crystal
A laser crystal and growth method technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as lattice distortion, achieve the effects of reduced dislocation density, simple method, and improved spectral performance
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Embodiment 1
[0028] Nd:GGG crystals were grown using the above-mentioned raw material ratio and process flow, and x=0.001 and Y=0.005 were taken in the raw material ratio. Gd first 2 o 3 , Ga 2 o 3 ,Nd 2 o 3 and CeO 2 Weigh according to the above ratio, after mechanically mixing evenly, sinter in a muffle furnace at 1400°C, put into a single crystal growth furnace, vacuumize, fill with 98% nitrogen + 2% oxygen, pull speed: 2mm / h, rotate Speed: 15rpm. After growing the crystal, it was slowly lowered to room temperature, and the crystal was taken out. Tested, Nd 3+ The concentration is evenly distributed, and the dislocation density is significantly reduced through dislocation detection and spectral testing, and the radiation resistance ability is effectively improved. Spectral performance is also improved accordingly.
Embodiment 2
[0030] Nd:GGG crystals are grown by using the above-mentioned raw material ratio and process flow, and x=0.002 and Y=0.1 are taken in the raw material ratio. Gd first 2 o 3 , Ga 2 o 3 ,Nd 2 o 3 and CeO 2 Weigh according to the above ratio, mechanically mix evenly, sinter in a muffle furnace at 1500°C, put into a single crystal growth furnace, vacuumize, fill with 98% nitrogen + 2% oxygen, pulling speed: 2.5mm / h , Rotation speed: 14rpm. After growing the crystal, slowly lower to room temperature, take out the crystal, Nd 3+ The concentration is evenly distributed, and the dislocation density is significantly reduced through dislocation detection and spectral testing, and the radiation resistance ability is effectively improved. Spectral performance is also improved accordingly.
Embodiment 3
[0032] Nd:GGG crystals were grown using the above-mentioned raw material ratio and process flow, and x=0.003 and Y=0.6 were taken in the raw material ratio. Gd first 2 o 3 , Ga 2 o 3 ,Nd 2 o 3 and CeO 2 Weigh according to the above ratio, mechanically mix evenly, sinter in a muffle furnace at 1100°C, put into a single crystal growth furnace, vacuumize, fill with 98% nitrogen + 2% oxygen, pull speed: 3mm / h, Rotation speed: 16rpm, after growing the crystal, slowly lower to room temperature, and take out the crystal. Tested, Nd 3+ The concentration is evenly distributed, and the dislocation density is significantly reduced through dislocation detection and spectral testing, and the radiation resistance ability is effectively improved. Spectral performance is also improved accordingly.
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