Method of growing GaN-based luminescent crystalline membrane for molecular beam epitaxy

A molecular beam epitaxy, luminescent crystal technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of reducing the luminous performance of GaN crystal film, large lattice distortion and so on

Inactive Publication Date: 2012-01-11
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, from the perspective of ionic radius matching, the doping of rare earth ions will cause large lattice distortion. Undoubtedly, the generation of such lattice distortion will introduce more point defects in the crystal film, thereby reducing the Luminescent Properties of GaN Crystal Films

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] In this example, x=0.1%, y=0.01%, Re is erbium Er, a rare earth metal, and A is boron (B). Put the above-mentioned weighed raw materials into different evaporation pools in the molecular beam epitaxy (hereinafter referred to as MBE) device, select sapphire with a GaN film as the substrate, control the temperature of the Ga evaporation pool at 900 ° C, and control the temperature of the Er evaporation pool at 850 °C. °C, the temperature of the crystal B evaporation pool was controlled at 900 °C. And generate atomic nitrogen by radio frequency plasma. After obtaining a film with a thickness of 5 μm, the substrate and each evaporation pool are naturally cooled, and the Er can be taken out after the MBE is emptied. 3+ and B 3+ Co-doped GaN crystal film. B 3+ Doped with the same concentration of Er 3+ GaN crystal film, the fluorescence intensity is enhanced by 5%-20%.

Embodiment 2

[0017] In this example, x=10%, y=1%, Re is erbium Er, a rare earth metal, and A is aluminum (Al). Put the above-mentioned weighed raw materials into different evaporation pools in the MBE device. The substrate is selected to grow silicon with GaN film. The temperature is controlled at 980°C. And generate atomic nitrogen by radio frequency plasma. After obtaining a film with a thickness of 5 μm, the substrate and each evaporation pool are naturally cooled, and the Er can be taken out after the MBE is emptied. 3+ and Al 3+ Co-doped GaN crystal film. Compared with no co-doped Al 3+ Doped with the same concentration of Er 3+ GaN crystal film, the fluorescence intensity is enhanced by 5%-20%.

Embodiment 3

[0019] In this example, x=5%, y=0.5%, Re is the rare earth metal erbium Er, and A is the metal aluminum (Al). Put the above-mentioned weighed raw materials into different evaporation pools in the MBE device, and select the GaN block grown by HVPE as the substrate. The temperature is controlled at 930°C. And generate atomic nitrogen by radio frequency plasma. After obtaining a film with a thickness of 5 μm, the substrate and each evaporation pool are naturally cooled, and the Er can be taken out after the MBE is emptied. 3+ and Al 3+ Co-doped GaN crystal film. Compared with no co-doped Al 3+ Doped with the same concentration of Er 3+ GaN crystal film, the fluorescence intensity is enhanced by 5%-20%.

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Abstract

The invention discloses a method of growing GaN-based luminescent crystalline membrane for molecular beam epitaxy, which dopes rare earth ions in the growth process to replace part of lattice site of Ga3+ and is characterized by comprising the following steps: doping III group element boron or aluminum in the raw material formula of the GaN crystalline membrane according to a certain ratio, wherein the III group element boron or aluminum enters into GaN lattice site via a mode of trivalent ion in the growth process; preparing ion radius difference between the rare earth ion and the Ga3+, wherein the molar ratio of the raw material formula is as follows: Ga:Re:A=(1-x-y):x:y, x represents rare earth metal, A represents III group element boron or aluminum, x is more than or equal to 0.1% andless than or equal to 10.0%, and y is more than or equal to 0.1x and less than or equal to x. In the invention, III group element boron or aluminum is doped with rare earth metal together according to a certain ratio so as to greatly improve lattice deformation of the GaN crystalline membrane caused by larger radius mismatch of Re3+ and Ga3+, and increase luminescent performance of the GaN crystalline membrane.

Description

technical field [0001] The invention relates to a method for growing a GaN film material, in particular to a method for MBE growing a GaN crystal film doped with rare earth ions. Background technique [0002] The third-generation semiconductor material GaN and its related devices have broad application prospects in optical display, optical storage, laser printing, optical lighting, medical and military fields, so the third-generation semiconductor material represented by GaN is known as IT A new engine for the industry. [0003] GaN is a wide band gap semiconductor with a band gap up to 3.4eV, so various rare earth ions can be doped into GaN without luminescence quenching. The luminescence band of rare earth ions can cover the region from ultraviolet to infrared, and the luminescence transition of rare earth ions mainly occurs between the partially filled 4f energy levels, which is less affected by the crystal field environment, the luminescence peak is sharp, and its color...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/34C23C16/448C23C16/52
Inventor 曾雄辉徐科王建峰任国强黄凯包峰张锦平
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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