A kind of lanthanide metal catalyst

Abstract

The invention discloses a lanthanide metal catalyst. The lanthanide metal catalyst comprises, by weight, 3-20 parts of La, 4-8 parts of Ce, 1-6 parts of Yb, 0-5 parts of Gd, 0-3 parts of Lu, 0-3 parts of Lu, and 0-3 parts of Tb, and all of the components are integrally melted in vacuum to form the lanthanide metal catalyst. The lanthanide metal catalyst acts on a target material, and is fused with a matrix of the target material, atoms of the lanthanide metal in the catalyst enter into crystal lattices of matrix of the target material, so that larger crystal lattice deformation is caused, distortion energy is generated, and system energy is increased; the rare earth atoms can only be enriched at high-energy crystal boundaries so that at the lowest free energy of the system is kept, thus, the conductivity of the target material is increased, the resistance value of the target material is reduced, the adhesion of the target material is enhanced; and more than 0.1WT% of the lanthanide metal catalyst is added to an ITO target material and a copper silver alloy target material, and the conductivity of the target material can be increased by 10-15%.

Description

technical field [0001] The invention relates to the field of target material manufacture, in particular to a lanthanide metal catalyst. Background technique [0002] In the process of making transparent circuit boards, the circuit resistance value formed by traditional ITO and metal targets will be relatively high. Generally, the indirect treatment scheme is adopted, that is, the resistance is reduced by thickening the coating of the circuit during the sputtering process. , this solution will not only increase the production cost, but also improve the efficiency is not high, and it is difficult to meet the resistance requirements of the current transparent circuit board. [0003] Therefore, there is an urgent need for a method that can directly start with the material of the circuit coating to effectively reduce the resistance of the target material, so that in the process of making a transparent circuit board, the use of the circuit board can meet the requirements of low-co...

AI Technical Summary

Problems solved by technology

[0002] In the process of making transparent circuit boards, the circuit resistance value formed by traditional ITO and metal targets will be relatively high. Generally, the indirect treatment scheme is adopted, that is, the resistance is reduced by thickening the coating of the circuit during the sputtering process. , this solution will not only increase the production cost, but also improve the efficiency is not high, it is difficult to meet the resistance requirements of the current transparent circuit board