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Compound semiconductor material doped with rare-earth elements and growth method thereof

A rare earth element and semiconductor technology, applied in the field of semiconductor materials, can solve the problems of reducing the luminous performance of GaN crystals and large lattice distortion, and achieve the effects of improving lattice distortion and improving luminous efficiency.

Inactive Publication Date: 2010-07-14
SUZHOU NANOWIN SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, from the perspective of ionic radius matching, the doping of rare earth ions will cause large lattice distortion. Undoubtedly, the generation of this lattice distortion will introduce more point defects in the crystal, thereby reducing the GaN Luminescent Properties of Crystals

Method used

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  • Compound semiconductor material doped with rare-earth elements and growth method thereof
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  • Compound semiconductor material doped with rare-earth elements and growth method thereof

Examples

Experimental program
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Effect test

no. 1 Embodiment approach

[0025] attached figure 1 Shown is a schematic diagram of the implementation steps of this specific embodiment, including: step S10, providing the source material and the replacement dopant; step S11, mixing the source material and the replacement dopant, placing them in the reaction vessel, and A seed crystal is placed in the reaction kettle, and is separated from the source material; step S12, injecting liquid ammonia and mineralizer into the reaction kettle; step S13, adjusting the temperature in the reaction kettle so that the seed crystal is in The region of and the region where the source material and the replacement dopant are located have different temperatures.

[0026] First, referring to step S10, a source material and a replacement dopant are provided, the source material is a mixture of one or more Group III elements and one or more rare earth elements, and the replacement dopant is a Group III elements or a mixture of multiple group III elements, and the atomic num...

no. 2 Embodiment approach

[0044] attached figure 2 Shown is a schematic diagram of the implementation steps of this specific embodiment, including: step S20, providing the first, second and third source substances; step S21, making the mixed gas pass through the surfaces of the first, second and third source substances in sequence; Step S22, passing the mixed gas over the surface of the growth substrate.

[0045] First, referring to step S20, first, second and third source materials are provided, wherein the second source material is selected from Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb One or more of them, the first source material is selected from one or more of B, Al, Ga and In, the third source material is selected from one or more of B, Al, Ga and In species, and the atomic number of the elements contained in the third source material is less than the atomic number of the elements contained in the first source material;

[0046] The function of the third source substance is as a s...

Embodiment 1

[0058] In this example, x=0.1%, y=0.01%, Re is the rare earth metal Er, and A is the metal boron B. Put the above-mentioned weighed raw materials in the evaporation pool of the HVPE device, select the sapphire with GaN film as the substrate, control the temperature of the Ga evaporation pool at 850°C, control the Er evaporation pool at 850°C, The temperature is controlled at 900°C. to N 2 / H 2 The mixed gas as carrier gas, with NH 3As a nitrogen source, HCl as a reaction gas flows through three evaporation pools filled with Ga, rare earth metal Er, and metal boron respectively. get 50

[0059] um thick crystal film, cooling the substrate and each evaporation pool to room temperature, the rare earth ions and B can be taken out 3+ Co-doped GaN crystal film. B 3+ Doped with the same concentration of Er 3+ GaN crystal film, the fluorescence intensity is enhanced by 5%-20%.

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Abstract

The invention discloses a compound semiconductor material doped with rare-earth elements, which is a crystal material being composed of III group elements and V group elements and doped with the rare-earth elements. The crystal material further comprises displacement adulterant which is an III group element or the combination of a plurality of III group elements, the atomic numbers of the III group elements contained in the displacement adulterant are smaller than those of the III group elements forming the crystal material, and the displacement adulterant substitutes original III group elements in crystal to form a displacement defect. The invention also provides a preparation method of the material. The invention has the advantages that the displacement defect is formed by doping elements with smaller atomic numbers in the material so as to improve the lattice deformation of the semiconductor material caused by doping the rare-earth element, thus improving the luminous efficiency of the material.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor materials, in particular to a compound semiconductor material doped with rare earth elements and a growth method thereof. 【Background technique】 [0002] The third-generation semiconductor material GaN and its related devices have broad application prospects in optical display, optical storage, laser printing, optical lighting, medical and military fields, so the third-generation semiconductor material represented by GaN is known as IT A new engine for the industry. [0003] GaN is a wide band gap semiconductor with a band gap up to 3.4eV, so various rare earth ions can be doped into GaN without luminescence quenching. The luminescence band of rare earth ions can cover the region from ultraviolet to infrared, and the luminescence transition of rare earth ions mainly occurs between the partially filled 4f energy levels, which is less affected by the crystal field environment, the luminescence peak i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40H01L21/205
Inventor 曾雄辉王建峰徐科任国强张永红杨辉
Owner SUZHOU NANOWIN SCI & TECH
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