92 results about "Heat deposition" patented technology

The present invention provides a method of laser processing of materials, specifically laser induced ablation processes for laser removal of material particularly important in medical and dental applications in which the laser removal of material should be done in such a way as to not damage any of the surrounding soft or hard biomaterial. The ablation process is achieved by impulsive heat deposition (IHD) by direct and specific excitation of short lived vibrations or phonons of the material in such a way as to not generate highly reactive and damaging ions through multiphoton absorption. The heat deposition and ensuing ablation process under prescribed time and wavelength conditions for laser irradiation is achieved faster than heat transfer to surrounding tissue by either acoustic or thermal expansion or thermal diffusion that otherwise would lead to excess heat related damage. The result is that all the deposited laser energy is optimally channelled into the ablation process in which the inertially confined stresses from both photomechanical expansion forces and thermally driven phase transitions and associated volume changes constructively interfere to drive the most efficient ablation process possible with minimal damage to surrounding areas by either ionizing radiation or heat effects. By choosing a specific range of wavelengths, spatial and temporal shaping of infrared laser pulses, the energy can be optimally deposited in a manner that further increases the efficiency of the ablation process with respect to minimizing collateral damage.

Dual wavelength laser energy in the near infrared electromagnetic spectrum is described as destroying bacteria via photo-damage optical interactions through direct selective absorption of optical energy by intracellular bacterial chromophores. Use of various dual wave length laser systems include use of optical assembly including two distinct diode laser ranges (including 870 nm and 930 nm) that can be emitted to achieve maximal bacterial elimination without intolerable heat deposition. Related processes for medical procedures are also described.

The invention relates to the technical field of laser machining, in particular to a gradient transition connection method of steel/titanium dissimilar metal based on laser synchronous preheating deposition. The method comprises the following steps of (1) machining and cleaning a substrate, wherein the joint form is butt joint or corner joint; (2) preheating, specifically, preheating the cross section of the deposition position of a titanium alloy base material by adopting laser; (3) powder preparation, specifically, weighing the stainless steel and the titanium alloy, and separately mixing theweighed stainless steel and titanium alloy with a nickel-based alloy; (4) laser deposition and synchronous preheating, specifically, preheating a deposition layer after laser deposition for a certainperiod of time, then continuously depositing, and alternately performing; (5) post-heating, specifically, continuously running the laser to perform post-heat treatment on the deposition layer; and (6) welding, specifically, obtaining the titanium/nickel/steel gradient deposition layer and performing welding. The method solves the problems of low strength and poor toughness of a welding joint caused by the fact that a continuous and high-brittleness intermetallic compound is extremely easy to form at an interface in the traditional fusion welding, high-energy beam welding and solid-phase connection process of the titanium alloy and the stainless steel at present.

The invention discloses a three-dimensional comprehensive test mining system for a large-scale full-size mining well. The three-dimensional comprehensive test mining system comprises a reaction kettle, a gas injection module, a liquid injection module, a temperature control module and a data acquisition, processing and display module, wherein the reaction kettle is used for preparing a natural gashydrate sample and truly simulating a natural gas hydrate reservoir forming environment in a seabed settled layer; the reaction kettle comprises a reaction kettle body, an upper kettle cover mountedon the upper end face of the reaction kettle body and a lower kettle cover mounted on the lower end face of the reaction kettle body; the gas injection module is used for quantitatively injecting gasinto the reaction kettle in a hydrate synthesis process; the liquid injection module is used for quantitatively injecting liquid into the reaction kettle in the hydrate synthesis process; the temperature control module is used for controlling the temperature in the reaction kettle; and the data acquisition, processing and display module is used for acquiring, storing, processing and displaying data when the test mining system is used for testing. The system disclosed by the invention can be used for preparing the natural gas hydrate sample and carrying out simulation researches on mining testsincluding pressure reduction, heat injection and the like under different well pattern arrangement forms; and hydrate decomposition, gas-liquid seepage and heat transfer and sediment stability in a mining process are researched.

The invention discloses a forecasting method for an induction thermal deposition calcium-phosphate coating process on the basis of a neural network, which comprises the following steps of preparing a calcium-phosphate coating by utilizing an induction thermal deposition method and collecting a test sample; fitting out a training sample by the test sample; establishing the BP (Back Propagation) neural network, training the network by adopting a Levenberg-Marquardt algorithm and utilizing the training sample, and testing the generalization ability of the network by the test sample; designing orthogonal horizontal process parameters, using the orthogonal horizontal process parameters as input parameters, simulating output parameters by utilizing the trained network and constructing an orthogonal sample; and carrying out analyzing calculation on the obtained orthogonal sample and forecasting influence of the process parameters on the deposition process. According to the invention, the data mining ability of the neural network is successfully utilized and the relation between three process parameters of time, frequency and temperature of induction thermal deposition and the deposition rate is analyzed, so that design of the calcium-phosphate coating preparation process is effectively guided.

This invention relates to a process method for semiconductor materials of gallium nitride crystals including the following steps: (1) epitaxial growth of Ga nitride or Al nitride on a substrate (2) heat-deposition of crystal particles of silicon, silicon carbide, silicon nitride or silicon oxide (3) continuation of epitaxial growth of Ga nitride further growing undoped and doped Ga nitride film Dor LED, LD, HEMT etc. photoelectronic and electronic apparatus. The said substraet can be sapphire, SiC SiL GaAs, ZnO, MgO, LiAlO2 or Li GaO2 effectively reducing dislocation, overcoming mismatch of the substrate and epitaxial layer.

The invention discloses a method for preparing a reflection-reduction film element of light P with thickness of 193nm in a large angle mode, and relates to the technical field of application of ArF excimer laser, and the method is used for solving the problem that the oversize optical loss is caused by surplus reflection when a 193nm laser beam in a P polarization state is incident to a beam expander prism group in a large angle mode. By utilizing the method, an LaF3 film layer and an MgF2 film layer are alternately deposited on a substrate in a vacuum heat deposition method; optical constant analysis on the LaF3 film layer and the MgF2 film layer are performed, and particularly, the thickness of the LaF3 film layer is optimized; the thickness of each LaF3 film layer is extremely compressed; and the total thickness of the multilayered LaF3 film layer is less than 40nm, so that the preparation of the reflection-reduction film element is realized. By utilizing the method, the ArF laser in the P polarization-state has extremely-low reflection ratio when being incident to 71o, and the output efficiency of the ArF laser is greatly improved.

A furnace temperature control method for thermal budget balance includes the steps of: placing a plurality of batches of wafers in the furnace; processing the wafers in the furnace via a heat deposition process; adjusting temperature in the furnace during the heat deposition process so that the temperature in the furnace has a temperature gradient; and controlling and inverting the temperature gradient so that the wafers in the furnace have the same thermal budget, whereby the electric parameters of the processed wafers tend to become uniform. Accordingly, considering the influence of the thermal budget, the present invention adjusts the temperature in the furnace and balances the thermal budget of the wafers in the furnace to avoid that the electric parameters of the processed wafers have extreme values, thereby improving the yield rate.

The invention discloses a superconductive proton cyclotron beam deflector, which comprises a space formed by a grounding housing, a beam cutting board, an outer beam cutting board clamp ring and an inner beam cutting board clamp ring. The space is internally provided with a high-voltage electrode; and the high-voltage electrode is fixedly arranged to the grounding housing through an insulator. The thickness of the beam cutting board is 0.1-0.3 mm at a beam inlet end, the thickness of the middle portion of the beam cutting board changes continuously, and the thickness of the beam cutting board is 1-3 mm at a beam outlet end. A sine gap is designed on the beam cutting board; and the outer beam cutting board clamp ring is provided with a water cooling loop. The structure of the beam deflector in a superconductive proton cyclotron is optimized; and through design of the cutting board structure provided with a replaceable striking plate and the water cooling loop and capable of resisting beam heat deposition, work capability of the beam deflecting mechanism can be improved, meanwhile, processing difficulty of beam deflecting mechanism can be reduced and manufacture cost is reduced.

The invention provides a carbon nanotube modified lead dioxide electrode in an electrocatalytic oxidation process, and a preparation method thereof. The preparation method for the lead dioxide electrode comprises the following steps: preprocessing a titanium plate, and carrying out heat deposition on a tin-antimony oxide bottom layer, an electrolytic deposition alpha-PbO2 intermediate layer, an electrolytic deposition beta-PbO2 internal layer, an electrophoresis carbon nanotube interlayer and an electrolytic deposition beta-PbO2 surface layer. The carbon nanotube modified lead dioxide electrode prepared with the preparation method has the advantages of large specific surface area, high hydroxyl radical production ability, high electrocatalytic oxidation activity and long service life, and is an electrode material which has a development potential and is suitable for an electrocatalytic oxidation process.

A method is provided for forming WSi_x gate electrode films with tunable Si/W atomic ratios, low oxygen and carbon film impurities, and work functions suitable for advanced semiconductor devices. The method includes providing a substrate containing a high-k film in a process chamber, maintaining the substrate at a temperature between 450° C. and 550° C., and performing a plurality of deposition cycles to form a WSi_x gate electrode film on the high-k film. According to embodiments of the invention, each deposition cycle includes exposing the substrate to a first process gas containing W(CO)₆ vapor to thermally deposit a W metal film with a thickness between 0.1 nm and less than 2 nm, and exposing the W metal film to a second process gas containing SiH₄ to form a WSi_x film having a Si/W atomic ratio controlled by self-limited Si incorporation into the W metal film. The method further includes patterning the WSi_x gate electrode film and high-k film to form a gate stack.

The utility model relates to a device for removing inhalable particles of automobile tail gas, which belongs to a device for removing ultrafine particles in the car tail gas. The device is composed of a group of parallel arranged thermophoresis working sections and upper and lower cascade boxes; The inlet and outlet of the thermophoresis working section are connected. The cold air outside the car is used to cool the pipe wall of the thermophoresis working section, and the inhalable particles contained in the exhaust gas will be deposited on the inner wall of the thermophoresis working section pipe due to the thermophoresis effect caused by the temperature difference. The invention utilizes the non-fully developed flow effect, and under the action of the thermophoretic effect, the thermophoretic deposition efficiency is continuously advanced in each link, and finally achieves a higher total deposition efficiency, and has the advantages of low construction and operation costs, convenient implementation, and controllability. The advantage of simplicity; efficient removal of inhalable particulate matter can be achieved under different installation conditions.

The invention provides an optical fiber device and a manufacturing method and application of the optical fiber device. Inorganic heat superconducting materials are packaged in the optical fiber device and closed space in any shape of an optical component in the optical fiber device, and heat deposition of a fiber laser and key devices and modules in the fiber laser can be removed fast and effectively. The sealing space in different shapes can be used under multiple conditions, the method is simple, manufacturing is easy, and fast heat radiation can be achieved easily. Through the method, the stability of the optical fiber device can be improved, and the service life of a laser source can be prolonged.

Provided is a method of manufacturing an organic light-emitting device, the method including: forming an anode; forming an intermediate layer including an emission layer on the anode; and forming a cathode on the intermediate layer, wherein the forming the cathode includes: thermally depositing indium oxide with plasma generated in a chamber; and surface-treating with plasma an indium oxide layer formed by the thermal depositing of the indium oxide.