The invention discloses a packaging structure and a manufacture method for
CMOS image sensors, and belongs to the
sensor field. An
optical interaction area is placed at a center on a first surface on the front surface of a
silicon substrate, a
metal interconnection layer is formed on the
optical interaction area, a
micro lens array is placed on the
metal interconnection layer, and a first
protection layer is arranged on the outer side of the
metal interconnection layer;
silicon through holes not penetrating through the
silicon substrate and a
redistribution layer are manufactured on the first surface, and an input / output (I / N) around the
optical interaction area is connected with the silicon through holes through the
redistribution layer;
passivation layers are manufactured on the silicon through hole walls, and the silicon through holes are filled; a second
protection layer is arranged on the
redistribution layer; the silicon substrate is bonded with a
glass sheet, and a cavity is arranged between the
glass sheet and the silicon substrate; the second surface of the silicon substrate is thinned to
expose the silicon through holes; a line layer is manufactured on the second surface of the silicon substrate to connect the silicon through holes to pads, and a
solder mask layer is manufactured on the line layer and exposes the pads; and solder balls are arranged on the pads. According to the packaging structure and the manufacture method for
CMOS image sensors, the layering problem between the glass and the silicon substrate in the packaging structure is solved, the reliability is improved, and the packaging structure is suitable for chips with large sizes.