50results about How to "Solve process difficulties" patented technology

The invention discloses a DRAM (Dynamic Random Access Memory) structure with an extended groove and a making method thereof. The structure comprises a PMOS (P-channel Metal Oxide Semiconductor) transistor and a groove capacitor which is connected with a source electrode of the PMOS transistor; the groove capacitor comprises a semiconductor substrate, alternatively arrayed P-type SiGe layers and P-type Si layers, a groove, a dielectric layer and a polysilicon layer, wherein the groove is positioned in the alternatively-arrayed P-type SiGe layers and P-type Si layers and inserted into the semiconductor substrate, the profile of the alternatively-arrayed P-type SiGe layers and P-type Si layers is in a shape of comb teeth, and the alternatively-arrayed P-type SiGe layers and P-type Si layers are used as a lower pole plate of the groove capacitor; the dielectric layer is positioned on the surface of the inner wall of the groove; the polysilicon layer is filled in the groove and used as an upper pole plate of the groove capacitor; an N-type Si layer is also prepared on the alternatively-arrayed P-type SiGe layers and P-type Si layers; and the PMOS transistor is made on the N-type Si layer. In the invention, the P-type SiGe layers and the P-type Si layers alternatively grow by adopting a doping and epitaxial technology, and the comb-tooth-shaped lateral wall is made by adopting selective etching, therefore, the structure of the deep groove type capacitor in a DRAM is improved, and the making process is simplified.

The invention discloses a DRAM (Dynamic Random Access Memory) structure with an expansion groove and a manufacturing method thereof. The structure comprises an NMOS (N-channel Metal Oxide Semiconductor) transistor and a groove capacitor connected with a source electrode thereof, wherein the groove capacitor comprises a semiconductor substrate, an N-type SiGe layer and an N-type Si layer which arealternately arranged, a groove, a dielectric layer and a polysilicon layer, wherein the groove is located in the N-type SiGe layer and the N-type Si layer which are alternately arranged and extends into the semiconductor substrate, and the section of a side wall of the groove is in a comb tooth shape; the N-type SiGe layer and the N-type Si layer which are alternately arranged are utilized as a lower pole plate; the dielectric layer is located at the surface of the inner wall of the groove; the polysilicon layer is filled in the groove and utilized as an upper pole plate of the groove capacitor; a P-type Si layer is also prepared on the N-type SiGe layer and the N-type Si layer which are alternately arranged; and the NMOS transistor is manufactured on the P-type Si layer. Through the method, the N-type SiGe layer and the N-type Si layer are alternately grown by utilizing a doping and epitaxial technique and the side wall in the comb tooth shape is manufactured by utilizing selective etching; and the method improves the structure of a deep groove capacitor in the DRAM and simplifies the manufacturing process.

The invention provides a self-capacitance touch display panel and a driving method thereof. The self-capacitance touch display panel comprises a first base plate, a second base plate and a liquid crystal layer, wherein the first base plate comprises a first substrate, a touch electrode layer, a driving circuit layer and a pixel electrode layer, the touch electrode layer is arranged on the side, close to the driving circuit layer, of the first substrate, the driving circuit layer is arranged on the side, away from the first substrate, of the touch electrode layer, and the pixel electrode layeris arranged on the side, away from the first substrate, of the driving circuit layer; the second base plate is arranged opposite to the first base plate and comprises a second substrate and a common electrode layer; and the liquid crystal layer is formed between the first substrate and the second substrate by filling. Integration of a vertical orientation display panel and a self-capacitance touchscheme is realized; compared with an externally-hanging touch display panel, tempered protective glass and a laminating process are omitted, and the cost is saved; compared with a traditional embedded touch display panel, the limitation that the electrodes can only adopt a common electrode reuse mode is broken through; and the sensitivity is higher, and the method is more suitable for large-sizecommercial products.

Disclosed is a method of forming an isolation film in a semiconductor device. In the process of forming a stack structure of a pad oxide film and a pad nitride film that expose a semiconductor substrate in an isolation region, protrusions of a tail profile are formed at the bottom sidewalls of the pad nitride film and the pad oxide film adjacent to the surface of the substrate, and top corners of a trench are made rounded using the protrusions as an anti-etch film when the substrate is etched, Therefore, it is possible to prevent concentration of an electric field on the top corners of the trench and prohibit generation of the leakage current. Accordingly, reliability of the process and electrical characteristics of the device could be improved.

The invention provides a method for producing 8014-H22 state aluminium alloy air-conditioner foil by a cast-rolled blank, belonging to the technical field of aluminium alloy plate belt foil processing. The method particularly comprises the steps of: adopting the production way of cast-rolling and cold-rolling, carrying out homogenizing annealing on the cast-rolled blank before cold rolling, and controlling the annealing temperature to be 520-530 DEG C and the annealing time to be 22-25h; after the homogenizing annealing, leading compound to be dispersed, thinning crystalline grains so as to be beneficial to the cold rolling and ensuring the final mechanical property of the product; reasonably distributing the cold rolling channels by the plasticity of metal and the capability of rolling equipment, and carrying out eight-channel cold rolling on the cast-rolled blank with the thickness of 6.4-7.4mm; and carrying out finished product annealing on aluminium foil which is rolled to be 0.17-0.24mm, and controlling annealing temperature to be 360-370 DEG C and the annealing time to be 14-17h. By adopting the method, the mechanical properties of the 8014-H22 state aluminium alloy air-conditioner foil with the thickness of 0.17-0.24mm can be controlled to be: tensile strength sigma b: 120-135MPa; percentage of elongtation delta: 25-30%; and the cup drawing valve: more than or equal to6.5. The method meets the requirement of the mouldability of a large air-conditioner radiating fin.

The invention discloses a high-linearity millimeter wave device and a making method thereof mainly in order to solve the problem that the existing device is of poor linearity of trans-conductance. The device comprises, from bottom to top, a substrate layer (1), a nucleation layer (2), a buffer layer (3), a second channel region (4), a back barrier layer (5), a first channel region (6), an insertion layer (7), and a barrier layer (8). A groove reaching the back barrier layer is formed in the barrier layer through etching. An enhanced channel region (9) is arranged on the inside wall of the groove and on the barrier layer. A conductive cap layer (10) is arranged on the enhanced channel region. A source electrode (11) and a drain electrode (12) are arranged at the two ends of the conductive cap layer. A grooved gate is engraved on the conductive cap layer in the groove. A passivation layer (13) is arranged on the inside wall of the grooved gate and on the conductive cap layer other than the source electrode and the drain electrode. A T-shaped gate electrode (14) is arranged on the passivation layer in the grooved gate. The trans-conductance peak range is widened, and the linearity of trans-conductance is increased. The high-linearity millimeter wave device can be used in communication, navigation, radar, and base station systems.

The invention relates to the technical field of photonic integrated devices, and discloses a silicon waveguide end face coupling structure and a manufacturing method thereof. The structure includes substrate silicon, oxide layer, silicon waveguide and silicon nitride layer stacked in sequence from bottom to top. The end of the silicon nitride layer is structured as a ridge structure to form a ridge silicon nitride waveguide. The ridge nitride Silicon waveguides are used for coupling to common single-mode fiber end-faces. The method includes: using a silicon-on-insulator substrate in a silicon-on-insulator substrate to prepare a silicon waveguide with a thin film silicon layer located on the oxide layer on the upper surface of the substrate silicon; preparing a tapered structure with a gradually narrowing width at one end of the silicon waveguide coupled with an optical fiber to form a silicon waveguide. A waveguide cone structure; a silicon nitride layer is deposited on the silicon waveguide and an oxide layer; a ridge structure is prepared by shallow etching the silicon nitride layer to form a ridge-shaped silicon nitride waveguide. The converted mode field of the ridge-shaped silicon nitride waveguide of the invention can be matched with common single-mode optical fiber, and is suitable for low-loss coupling between silicon waveguide and common single-mode optical fiber in the packaging process of silicon photonic chips.

The invention provides a method for measuring the transverse thermal conductivity of a thin film. Firstly, the 3ω method is used to measure the longitudinal thermal conductivity of the thin film to be measured by using the second metal strip deposited on the surface of the thin film to be measured as a heating source; There is a substrate; the longitudinal direction is the direction perpendicular to the film to be tested; then use the 3ω method, using the first metal strip as the heating source, to measure the temperature rise in the longitudinal direction of the film to be tested, and combine the measured longitudinal thermal conductivity to deduce The thermal power in the longitudinal direction of the film to be measured is obtained; the temperature rise of the first metal strip is measured at the same time, and the thermal field generated by the temperature rise of the first metal strip in the transverse direction of the film to be measured leads to the temperature rise of the second metal strip; finally calculated The transverse thermal conductivity of the film to be measured with thickness d. The invention adopts the "substrate / film to be tested / metal strip" sample structure, which effectively avoids the technical difficulties of preparing samples with a suspended structure; the bimetallic strip can accurately measure the lateral temperature difference of the film, and the measurement result has higher accuracy.

A method for thermal spraying preparation of a coating on a large size bending pipe workpiece is as follows: first the bending pipe workpiece surface is pretreated, a specially-designed bending pipe spraying tooling is used for clamping and fixing, the specially-designed bending pipe spraying tooling mainly includes a tooling body, a supporting frame, a motor, a drive chain wheel, a driven chain wheel, a main shaft, a countershaft, a fixing sleeve and a protection plate, the workpiece is fixed on the main shaft and the countershaft through the fixing sleeve and fastening screws, and can be driven, by the drive chain wheel, the driven chain wheel, the main shaft and the countershaft, to rotate, wherein the drive chain wheel, the driven chain wheel, the main shaft and the countershaft are driven by the motor. When in spraying, a spray gun respectively sprays once along A, B and C track lines to form one spray pass, and sprays by repeated multiple passes until needed coating thickness is obtained, and the workpiece is cooled by high-speed air curtain. The method can ensure uniform coating thickness, texture and property of arc length and outer circumference direction of the bending pipe workpiece, can effectively prevent the component deformation, and is especially suitable for thermal spraying preparation of the coating on large size bending pipe workpiece with the curvature radius greater than or equal to 2m, length less than 2m and diameter between 30-140mm.