157results about How to "Reduce the cost of growth" patented technology

The invention relates to a biogas residue organic fertilizer and a preparation method thereof. The biogas residue organic fertilizer uses biogas residue as major raw materials (the consumption is higher than 80 percent) to be mixed with humic acid, nitrogenous fertilizers, phosphate fertilizers, potash fertilizers and trace elements. By aiming at two problems that the biogas residue can not be dewatered and solidified easily and the mechanical dewatering has high energy consumption, the invention utilizes a shallow tank natural solidifying and air drying process, and the biogas residue carries out aerobic secondary fermentation, air drying and solidification in a shallow tank to meet the pelletization moisture and physical property requirements. The biogas residue organic fertilizer of the invention can meet the requirement of nutrient required by crop growth, and can also fertilize the soil and improve the yield.

The invention discloses a perovskite solar battery and a preparation method thereof. The perovskite solar battery sequentially comprises a transparent electrode, a mesoporous p-i-n structure frame and a counter electrode from bottom to top; the mesoporous p-i-n structure frame is composed of an n-type semiconductor layer, an insulating layer, and a p-type semiconductor layer in a sequentially stacked mode, and the n-type semiconductor layer, the insulating layer and the p-type semiconductor layer all comprise mesopores filled with a perovskite material. The preparation method sequentially includes preparing the mesoporous p-i-n structure frame on a transparent conductive substrate through a spin-coating method or a screen printing method, filling the perovskite material and preparing the counter electrode layer. The perovskite solar battery can simplify the preparation process and reduce production costs by using the mesoporous p-i-n structure frame, effectively ensures the energy conversion efficiency of solar batteries and has a good prospect for industrial application.

The invention relates to a method for growing crystal by reducing atmosphere Kyropoulos method; the method is characterized in that on the basis of growing crystal by induction heating pulling method, a tungsten, or molybdenum, or tungsten molybdenum alloy crucible is used; graphite felt which is arranged outside the crucible is used as a heat insulator; the reducing atmosphere is formed at high temperature; a hard graphite felt heat cover or a zirconia brick heat cover combined with a tungsten molybdenum after heater are placed above the crucible to preserve heat for fused mass in the crucible and the crystal grows; an observation window is arranged at the upper cover of the heat cover and the upper side of a furnace wall to ensure uniformity and symmetry of temperature field and temperature gradient distribution; the observation window arranged at the upper cover of the heat cover and the upper side of the furnace wall are used to observe the fused mass and the conventional pulling method is used to carry out parallel shouldering on inoculating crystal; then power is reduced at a certain speed, meanwhile, the crystal can be slightly pulled or not pulled, that is the Kyropoulos method; after crystallization is over, power is continued to be reduced to lower the temperature of the crystal. With the method of the invention adopted, large-size and high-quality crystal can be grown at low cost.

The invention discloses a preparing and purifying method of dealing modularization air-float artificial mattress of wastewater, wherein the main frame of bed display member frame structure as cube box; the bottom, angle and side wall connected with pipes; the top open up to the air; the grid plate is set on the bottom of the bed; the planting box is set on the grid plate; planting vegetation through the planting hole; setting several floats on the side wall; counteracting the weigh of bed body with floatage; keeping balance of bed body in the water; installing ports for passing water on the bottom of float bowl with at least 2 float bowl on the holder; inserting gas-filled lamp into float bowl through ports for passing water; equipping inflating gate valve on the other side of gas-filled lamp. The invention possesses rational structure and simply production, which can improve the survival rate of water plant.

The invention belongs to the technical field of sapphire crystal growth furnace equipment, and provides a multistage graphite heating system of the sapphire crystal growth equipment and a using method of the multistage graphite heating system. The multistage graphite heating system comprises an upper heater, a middle heater, a bottom heater, three power supply devices, a growth furnace cavity, a crucible device and a heat preservation layer, wherein the growth furnace cavity comprises a small furnace cover, a large furnace cover, a furnace cylinder and a furnace base plate; the crucible device comprises a crucible, a crucible tray and a crucible supporting column; each of the upper heater and the middle heater comprise a continuous S-shaped fence-shaped graphite cylinder, four graphite round columns, two long water cooling copper electrodes and two short water cooling copper columns; the bottom heater comprises an S-shaped fence-shaped graphite disc, two graphite electrodes and a water cooling copper electrode; the three individually controlled power supplies are connected with water cooling cables of the upper heater, the middle heater and the bottom heater. The multistage graphite heating system of the sapphire crystal growth equipment and the using method of the multistage graphite heating system have the advantages that the temperature gradient requirement for the growth of large-sized sapphire crystals at each stage can be met, the cost can be reduced, and the quality can be improved.

The invention relates to the field of composite fertilizers, and concretely relates to a long-acting modified sustained-release fertilizer coated by urea-formaldehyde resin. The fertilizer is prepared from the following raw materials in parts by weight: 10-15 parts of 1250-2000 mesh diatomite, 10-12 parts of ammonium phosphate, 12-15 parts of ammonium bicarbonate, 8-10 parts of calcium superphosphate, 6-8 parts of flaxseed meal powder, 4-6 parts of cobs, 8-10 parts of rapeseed meal, 4-5 parts of traditional Chinese medicine residue, 2-4 parts of bamboo shreds, 3-5 parts of agarose, 1-3 parts of tris(hydroxymethyl)aminomethane, 2-4 parts of disodium ethylene diamine tetraacetate, 12-15 parts of urea-formaldehyde resin emulsion, 1-2 parts of disproportionated potassium rosinate, 0.2-0.3 part of sodium dodecanesulphonate, 2-3 parts of polyamide, 1-2 parts of potassium iodate, 3-4 parts of tricalcium phosphate, 2-3 parts of zinc gluconate and 4-5 parts of an auxiliary agent. The composite fertilizer is abundant in raw material kinds and comprehensive and rich in nutrients, contains abundant organics, and is capable of improving soil environment. Dual cladding on nutrients is formed by utilizing diatomite and a sustained-release agent in the production technology, the fertility is durable and stable in release, and the quality and the output of crops are effectively improved.

The invention discloses a graphite crucible for increasing the growth length of silicon-carbide crystal. The graphite crucible comprises a graphite cover and a graphite bottom groove, wherein a graphite ring is also arranged between the graphite cover and the graphite bottom groove; the graphite cover is positioned at the upper-part sealing opening of the graphite ring; silicon-carbide seed crystal and silicon-carbide powder source are arranged under the graphite cover in sequence; a graphite connecting ring is added between the graphite ring and the graphite bottom groove; the graphite connecting ring is connected with the graphite ring and the graphite bottom groove by clamping grooves in an embedding manner; the graphite cover, the graphite ring, the graphite bottom groove and the graphite connecting ring are respectively made of high-purity graphite with same materials; the high-purity graphite means graphite with the carbon content being larger than 99.999%; the loading height ofthe silicon-carbide powder source is lower than the position of the graphite connecting ring, so that the crystallization of the silicon-carbide powder is prevented from causing bonding of the graphite connecting ring and the graphite bottom groove and causing difficult disassembly, and the problems of short growing length and overhigh growth cost of the silicon carbide in the prior art are solved.

The present invention relates to a method for growth of germanium quantum dots. In the method, germanium quantum dots are grown on graphene interfaces with different quantities of layers. In the present invention, ultra-high uniformity graphene interfaces are introduced on a conventional substrate surface, Ge quantum dots are grown on the interfaces, and complicated cleaning processes for obtaining high-quality interfaces are avoided, and process flows are simplified; in addition, the low-matrix element content and the low defect rate of the germanium quantum dots are ensured, a self-organization growth process of the germanium quantum dots is ensured, and germanium quantum dots with good shape and uniformity are formed.

Systems and methods are provided for preparing multi-component ferroelectric crystals (e.g., PMN-PT, amongst others) having piezoelectric properties. The crystals are fabricated using a system that employs multiple heaters and sensors that are located along the length of a crystal growth chamber. The heaters are controlled in concert, via a feedback system, to produce a temperature profile having a gradient that effectively moves along the length of the chamber, to suitably effectuate crystallization throughout the chamber, without need for the chamber to translate relative to the heater(s). During the crystallization process, the contents of the chamber may be mixed and / or homogenized via suitable agitation thereof, resulting in a multi-component ferroelectric crystal of desirable quality.

This invention relates to the heater and electrode structure of diamond film growth device. This invention mainly includes a fixing electrode, a mobile electrode and corresponding heater, the character as follows: the fixing electrode is arranged with a group of electrode poles in equal space; and the mobile electrode is also arranged with a group of electrode poles, and the space is equal to the electrode pole space of the fixing electrode, the electrode pole is half space away from the electrode pole on the fixing electrode; the heater is a flat-shape heater, which is wrapped around the electrode pole of the fixing electrode and mobile electrode to form heater array. Comparing to the circular silk, the flat-shape structure increases the contact area and time of the reaction gas and heater, and improves the reaction gas decomposing rate, and save electric energy to decrease the growth cost of the diamond film.

The invention belongs to a crucible device for a process of equipment for growing polycrystalline silicon by utilizing a directional solidification technology. The device is characterized in that a square high-purity graphite crucible is used for replacing the commonly used square high-purity quartz crucible; the square high-purity quartz crucible is formed by processing a whole graphite blank, and is assisted by relevant process designs (see figure); Si3N4, SiO / SiN or other materials are sprayed on the interior surface of the crucible and cured at high temperature. The square high-purity graphite crucible can be repetitively used in the polycrystalline silicon directional growth solidifying furnace, and then the producing cost of polycrystalline silicon ingots is greatly decreased, thereby reducing the silicon sheet price for the development of photovoltaic industry.

The invention provides a calculating method of growing parameters in a rare earth scintillation crystal growing process and a growing process of rare earth scintillation crystals. The growing process comprises the following steps: firstly, mixing an oxide raw material for preparing the rare earth scintillation crystals to obtain a mixed raw material; then in a vacuum atmosphere or a protective atmosphere, sintering the mixed raw material obtained in the step to obtain a polycrystal material block; and finally, in the vacuum atmosphere or the protective atmosphere, after melting the polycrystal material block, performing crystal growth by means of a pulling method according to the growing parameters calculated by the calculating method guided by seeds with specific growing directions to obtain the rare earth scintillation crystals. From the aspect of a crystal growing theory, the growing parameters such as the fastest growth rate, pulling growth rate and crystal rotating rate thermodynamically permitted through special simulating, deducing and calculating methods are obtained. The growing process is low in energy consumption, little in noble metal loss, short in time of growing process and high in crystal rate of finished products and has an obvious low cost advantage.

The invention discloses a zinc selenide single crystal growing method and a zinc selenide single crystal growing container. The method uses zinc and selenium as raw materials and iodine as a vapour phase reaction promoter, and further completes the growth of a zinc selenide single crystal in an ampoule. The method sequentially comprises the following steps: comprehensively cleaning the ampoule, feeding the materials into the ampoule and evacuating the ampoule, sealing the ampoule, cleaning a growing area of the sealed ampoule with hot water, growing crystals, cooling the crystals, and the like. The ampoule has the basic structure that: a raw material area is easy to mix Zn and Se elementary substances; and the growing area consists of a conical body formed by the tangency of two sections of arcs on the cross section of a middle axis of the ampoule. The technical scheme adopted by the invention can grow zinc selenide single crystals of a diameter of 12 to 20mm, and also can be applied to the preparation of other II-VI group compound semiconductor crystals. The grown zinc selenide single crystals have the characteristics of integral structure, good uniformity, small stress, low cost,and simple process.

The invention provides a preparation method of an N-type low-drift-angle silicon carbide epitaxial wafer. The method comprises the following steps: preparation of a substrate, online etching of the substrate, growing of a buffer layer and the growing of an epitaxial layer, wherein the growing of the epitaxial layer employs a method of "growing, etching, blowing and regrowing". The method provided by the invention effectively reduces the base dislocation density and reduces deposits in a cavity during the process of growing the N-type low-drift-angle silicon carbide epitaxial wafer, accordingly reduces the triangle defect caused by foreign particles, improves the quality of a silicon carbide epitaxial material, and is low in processing cost, thereby being suitable for industrial production.

The invention relates to a method for epitaxial growth of a gallium nitride (GaN) thin film on a Si substrate, the crack growth of GaN epitaxial thin films is limited, the surface topography is uniform, the process is relatively easy, and the method is easy to realize. According to the technical scheme, the method includes the steps that a metal-organic chemical vapor deposition (MOCVD) system isadopted for epitaxial growth and the epitaxial growth of the GaN thin film is conducted on the Si substrate. The method is characterized in that the epitaxial structure of the GaN thin film sequentially comprises the Si substrate, a pre-buried aluminum layer, a low temperature aluminum nitride (AlN) buffer layer, a high temperature aluminum nitride (AlN) buffer layer, a gallium nitride aluminum (AlxGal-xN) layer and the GaN thin film layer, wherein the low temperature AlN buffer layer is a low temperature AlN three-dimensional nucleating layer, the high temperature AlN buffer layer is a high temperature AlN three-dimensional nucleating layer, the AlxGal-xN layer is an AlxGal-xN stress relief layer, and the GaN thin film layer is a final growth layer.

The invention uses a rapid high strong fixing agent to solidify the soleplate mudstone inside a lane. The mudstone after solidified by the rapid high strong fixing agent is pressed and shaken to form a base layer of the lane surface directly, and then the concrete or asphalt surface layer is paved on the solidified road base layer, thereby forming an integrated roadbed road surface. The invention not only can repair the damaged road surface of the lane rapidly to guarantee the smooth production but also solve the problem of the waste mud polluting the environment; moreover, the economical efficiency is superior to that of the prior operation method that the concrete soleplate is pressed after the desilting.

The invention discloses a passive-drive dustbin capable of changing waste bags automatically. The passive-drive dustbin comprises a dustbin body. An opening used for collecting waste is formed in thetop of the dustbin body. A first cavity used for accommodating the waste bag is formed below the opening. The passive-drive dustbin is characterized in that the passive-dustbin further comprises a waste bag storage box, a waste bag conveying mechanism and a waste bag opening mechanism; the waste bag storage box is mounted on one side of the top of the dustbin body, a second cavity is formed in thewaste bag storage box, a plurality of stacked waste bags can be stored in the second cavity, and the first cavity communicates with the second cavity; the waste bag conveying mechanism is located inthe second cavity and is used for conveying the foremost waste bag to a first specified position; and the waste bag opening mechanism is located in the first cavity and is used for opening the waste bag located at the first specified position, so that an opening of the waste bag is located under the opening in the top of the dustbin body. The passive-drive dustbin capable of changing waste bags automatically is convenient to use, clean, sanitary, environmentally friendly, capable of saving energy, high in automation degree, and capable of greatly reliving the labor intensity.

A culture medium for the Daqiugai mushroom is prepared from the capsules of coffee bean and the saw dust or shavings of broad-leaf tree through mixing, adding water and stirring.

The invention discloses a crucible for growing a cadmium selenide crystal and a growing method of the cadmium selenide crystal. The crucible comprises an inner-layer crucible, an outer-layer crucible and a crucible cover, wherein the outer-layer crucible is sheathed outside the inner-layer crucible, the crucible cover is used for covering the outer-layer crucible, and a clearance is left between the outer-layer crucible and the inner-layer crucible; the inner-layer crucible comprises a tapered tip part and a first column body part for growing the cadmium selenide crystal, and the first column body part is arranged above the tapered tip part; the internal contour of the outer-layer crucible is matched with the external contour of the inner-layer crucible, and the external contour of the outer-layer crucible is columnar; the inner-layer crucible is made of graphite or pyrolytic boron nitride, and the outer-layer crucible is made of at least one of molybdenum, tungsten, iridium and platinum, and alloys thereof. The crucible can buffer pressure from the inner-layer crucible, so as to prevent the inner-layer crucible from having cracking and melt leakage phenomena; the crucible can guarantee that the inner-layer crucible and the outer-layer crucible cannot be cracked due to thermal expansion.

The invention discloses a device and method for growing a nitride monocrystal. The device comprises a reaction kettle, wherein the reaction kettle is filled with a growing solution; a seed crystal template is arranged at the bottom of the reaction kettle; a nitrogen inlet is formed at the top of the reaction kettle; and a pressure regulation valve is arranged in the nitrogen inlet. The device is characterized in that a vortex generation device for enabling the growing solution to form a vortex is arranged in the reaction kettle, and the vortex generation device is a gas flow system, a nitrogen pipeline system or a solution backflow system and enables the growing solution in the reaction kettle to form the vortex. By adopting the device and method disclosed by the invention, the shortcomings of unordered solution convection and insufficient N source supply of traditional reaction devices are effectively overcome, and the crystal quality and uniformity are effectively improved.

The invention provides a method for cultivating young portunid, comprising the following steps of early-stage preparation: soaking a cultivation pond with clean water for 1-2 days, then sterilizing the cultivation pond with 50ppm-100ppm bleaching powder, paving sterilized sea mud on the bottom of the cultivation pond, introducing sea water and adding bdellovibrio solution and nitrifying bacteria; spawning; after-treatment: throwing bacillus solution during the cultivation process. By the adoption of the method provided by the invention, the water can be purified, the water quality can be improved, and the residues caused by a conventional cultivation method can be prevented; meanwhile, as the water is not changed during the cultivation process, the growing cost is reduced; not only is the survival rate of the young portunid improved, but also the immunity of the young portunid can be improved; with the utilization of the method, the abuse of drugs such as antibiotics in production is avoided; the incidence of diseases is lowered; the production yield is improved.

The invention provides a preparation method of an N-type low-defect silicon carbide epitaxial wafer. The method comprises the steps of preparation of a substrate, online substrate etching, growth of a buffer layer and growth of an epitaxial layer, wherein growth of the epitaxial layer includes growth, etching, blowing and re-growth. The method can be used to effectively reduce the dislocation density of the base, reduce deposit in the cavity, reduce the defect density of the surface of the silicon carbide epitaxial wafer, improve the quality of a silicon carbide epitaxial material, and is wide in application range, low in processing cost and suitable for industrial production.

The invention relates to a GaN-base LED epitaxial structure and a growing method of the GaN-base LED epitaxial structure. The growing method of the GaN-base LED epitaxial structure includes the following steps: (1) sequentially growing a GaN nucleating layer, an involuntary doping u-GaN layer and an N-type doping GaN layer on a sapphire substrate, (2) growing an active area MQW layer on the N-type doping GaN layer, when the active area MQW layer grows, enabling the pressure of a reaction chamber during quantum well growth to be smaller than the pressure of the reaction chamber during quantum base growth, keeping a pure N2 atmosphere for set time respectively before the quantum well growth and after the quantum well growth, controlling the growth thickness of a quantum base in the active area MQW layer to be smaller than 6nm, and (3) further growing an electronic barrier layer, a P-type doping GaN layer and a contact layer on the active area MQW layer sequentially. The GaN-base LED epitaxial structure is low in production cost, and a GaN-base LED manufactured by the GaN-base LED epitaxial structure is high in luminous efficiency.

The invention discloses a preparation method of an AlN film based on a patterned sapphire substrate (PPS). The method comprises the following steps that (1) a PSS wafer is selected, and the PSS wafer and an Al target are pretreated; (2) a reaction chamber is vacuumized, and the PSS wafer is placed in the vacuumized reaction chamber; (3) the PSS wafer is cleaned with low energy, so that an oxide layer on the surface of the wafer is removed; (4) the PSS wafer is heated to be at a certain temperature through currents; (5) the PSS wafer is subjected to pre-sputtering in a vacuum environment; (6) sputter coating is carried out at a stable air pressure, and the AlN film based on the PSS is obtained; and (7) equipment is shut down, and the prepared AlN film based on the PSS is taken out. The graph dimension of the PPS is 2.6-2.8 microns, the height of the PPS is 1.6-1.8 microns, the thickness of the AlN film is 15-50 nm, the half-peak width is 160-180 arcsec, and the surface roughness is 0.3-0.5 nm. According to the method, patterned sapphire is adopted as the substrate, the AlN film is prepared through the plasma magnetron sputtering method, by means of the AlN film, the warping during epitaxial growth of the sapphire can be greatly reduced, and the yield and output power of an LED chip are greatly improved.

The invention provides a high-performance non-asbestos brake pad, and further provides a method for preparing the high-performance non-asbestos brake pad. The high-performance non-asbestos brake pad is at least prepared from the following components in parts by weight: 40-60 parts of fibers, 10-15 parts of resin and 35-40 parts of frictional powder. The non-asbestos brake pad is free of asbestos and is healthy and environmentally friendly, meanwhile, waste of non-asbestos clutch surface production is used as the frictional powder to turn the waste into treasure, the production cost, and wastedischarge is reduced.

The invention relates to the technical field of euglenophyta culture, and discloses a sterilization method of an euglenophyta culture solution. The sterilization method of the euglenophyta culture solution comprises the steps of (1) taking an algae solution at a logarithmic growth phase, and centrifuging to obtain a supernatant; (2) resuspending algae cells through acidic heterotrophism or euglenophyta culture mediums, centrifuging, removing the supernatant, and then resuspending the algae cells through the acidic heterotrophism culture medium or the euglenophyta culture medium; (3) adding an antibiotic into a culture solution; (4) light culturing; and (5) selecting an inoculated algae solution survived after being processed through the step (4), and inoculating into a fresh sterile heterotrophism culture medium or a fresh sterile euglenophyta culture medium for culturing. According to the sterilization method of the euglenophyta culture solution provided by the invention, on the basis of adjusting a low pH value for a common culture medium, the antibiotic is added, so that the growth of infectious microbes can be remarkably inhibited, the growth of euglenophyta is promoted, the euglenophyta can quickly enter an exponential growth phase, higher growth density is achieved within a short time, and the dominant position of a population of the euglenophyta is maintained.

The invention discloses a method for growing a zinc oxide single-crystal thick film with large size and high quality on a sapphire substrate, which comprises the steps of: 1) using zinc acetate, polyvinyl alcohol and deionized water to be prepared into a colloid solution; 2) soaking the sapphire substrate with clean surface in the deionized water for certain time; 3) using a photoresist spinner to evenly spread a layer of zinc acetate-polyvinyl alcohol colloid solution on a C plane of the sapphire substrate; 4) performing high-temperature annealing on the colloid solution after the colloid solution is dried; 5) using a wet method to etch the substrate annealed by the step 3, using the deionized water to rinse after the etching is finished, and spin-drying; and 6) using metal-source chemical vapor phase epitaxial growth technology (MVPE) to grow the zinc oxide single-crystal thick film on the spin-dried sapphire substrate. The method has the characteristics of simple process and equipment, low cost, high repeatability and so on.

The invention relates to a method for protecting a precious metal crucible by coating the crucible with a high temperature resistant coating. The method comprises the following steps: carrying out surface pretreatment on the precious metal crucible: blasting the outer surface of the precious metal crucible by using aluminium oxide particles at a high speed in an airtight box, so that ultrafine pits are formed on the outer surface of the precious metal crucible so as to increase the outer specific surface area of the crucible; and carrying out high-temperature plasma spraying of fine zirconium oxide sand on the pretreated outer surface of the precious metal crucible so as to form a dense zirconium oxide protective layer. According to the method, the ultrafine pits are formed on the outer surface of the precious metal crucible by carrying out high-speed fine particle blasting on the outer surface of the precious metal crucible so as to increase the outer specific surface area of the crucible, so that the adsorption capacity between the protective layer and the outer surface of the crucible is increased; and the dense zirconium oxide protective layer is formed through plasma spraying, so that the volatilization of the precious metal crucible is reduced, the using loss is reduced, and the growth cost of crystals is saved.

The invention discloses a micro-pulling-down crystal growing furnace. The furnace comprises an upper heat-insulating layer and a bottom heat-insulating layer (13) which are arranged from top to bottom, wherein a tubular observation hole (4) is also formed in the bottom heat-insulating layer (13), and the included angle formed by the central axis of the observation hole (4) and the normal of the top surface of the bottom heat-insulating layer (13) is in a range of 45-60 degrees; each of an inner heat-insulating layer, a middle heat-insulating layer and the bottom heat-insulating layer (13) is formed by pressing and calcining zirconium oxide and aluminium oxide in the mass ratio of 1:9. According to the micro-pulling-down crystal growing furnace, the crystal growing condition of a crystal growing interface can be timely observed via the formed observation hole; besides, the effect caused by the observation hole on the temperature field of the crystal growing furnace is low, and the crystal growing yield can be further increased.

The invention belongs to the technical field of crystal growth, relates to a crucible structure for growing silicon carbide monocrystals by a physical vapor transport technology, and particularly relates to a crucible for growing silicon carbide monocrystals and having multiple growth cavities. According to the crucible provided by the invention, a material cavity structure of the crucible is in design of multiple growth areas and unified material cavity. The crucible provided by the invention is characterized by adopting the design of multiple growth areas and unified material cavity. In the crucible, multiple silicon carbide monocrystals can be grown synchronously in the same growth period. By adopting the crucible design provided by the invention to grow silicon carbide monocrystals, the growth efficiency can be effectively improved, the growth time is saved, and the crystal cost is reduced. Compared with the traditional method, the monocrystal growth efficiency is improved by 2-3 times on the premise of same equipment configuration.