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Device and method for growing nitride monocrystal

A growth device and nitride technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of hindering N entering the solution, slow crystal growth, low crystal quality, etc., to reduce production costs, promote dissolution, Reduce the effect of polycrystalline layers

Active Publication Date: 2015-10-07
DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional sodium flow reaction kettles generally use integral heating reactors and single-channel nitrogen gas pipelines, which are not only prone to disordered convection, but also prone to polycrystals at the gas-liquid interface, which prevents N from entering the solution to fully participate in the reaction, resulting in slow crystal growth and lower crystal quality

Method used

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  • Device and method for growing nitride monocrystal
  • Device and method for growing nitride monocrystal
  • Device and method for growing nitride monocrystal

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Experimental program
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Effect test

Embodiment 1

[0040] Embodiment one, as attached figure 1 , 2 As shown in and 3, a growth device for a nitride single crystal includes a reactor 100, the reactor 100 is filled with a growth solution 110, the bottom of the reactor 100 is provided with a seed crystal template 130, and the top of the reactor 100 is provided with a nitrogen gas inlet Inlet 120, the nitrogen gas inlet 120 is provided with a pressure regulating valve 123, and the reactor 100 is provided with a vortex generating device for forming a vortex in the growth solution. The vortex generating device is an air flow system 140 installed on the inner wall of the reactor. The air flow system includes an air guide tube 140 and a driver connected with the air guide tube to make the gas flow. The gas outlet terminal of the air guide tube 140 communicates with the inside of the reactor. The driver can be built into the air duct, and the driver operates to generate flow of nitrogen gas in the reactor. In addition, the driver for...

Embodiment 2

[0042] Embodiment two, as attached Figure 4 As shown, the structure of the second embodiment is basically the same as that of the first embodiment, and the vortex generating device in the reactor 200 is also an airflow system, the difference is that the airflow system in the second embodiment is located at the liquid level of the growth solution 220 in the reactor 200 below and above the seed template. The gas flow system includes an air guide tube 240 and a driver connected to the air guide tube to make the gas flow. The driver can be built in the gas guide tube, nitrogen enters from the nitrogen gas inlet 220 on the reaction kettle 200, and the nitrogen gas inlet can be adjusted by adjusting the pressure regulating valve 223 provided in the nitrogen gas inlet, and the driver runs to make the nitrogen gas in the reaction kettle 200 generate flow. Other drivers that make the gas flow can be existing known products, such as small driving fans or others as long as they can ge...

Embodiment 3

[0044] Embodiment three, as attached Figure 5 , 6 As shown in and 7, the main structure of the third embodiment is basically the same as that of the first embodiment, the difference lies in the specific structure of the eddy current generating device. A growth device for a nitride single crystal, comprising a reaction kettle 300 filled with a growth solution 310, a seed crystal template 330 is provided at the bottom of the reaction kettle 300, and a nitrogen gas inlet is provided at the top of the reaction kettle 300, and the nitrogen gas enters A pressure regulating valve 324 is provided in the air port, and a vortex generating device for forming a vortex in the growth solution is provided in the reactor 300 . The vortex generating device is a nitrogen pipeline system, and the nitrogen pipeline system includes a nitrogen inlet pipe 320 connected to the nitrogen inlet of the reactor 300, the nitrogen inlet pipe 320 is arranged in the reactor 300, and the nitrogen inlet pipe ...

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Abstract

The invention discloses a device and method for growing a nitride monocrystal. The device comprises a reaction kettle, wherein the reaction kettle is filled with a growing solution; a seed crystal template is arranged at the bottom of the reaction kettle; a nitrogen inlet is formed at the top of the reaction kettle; and a pressure regulation valve is arranged in the nitrogen inlet. The device is characterized in that a vortex generation device for enabling the growing solution to form a vortex is arranged in the reaction kettle, and the vortex generation device is a gas flow system, a nitrogen pipeline system or a solution backflow system and enables the growing solution in the reaction kettle to form the vortex. By adopting the device and method disclosed by the invention, the shortcomings of unordered solution convection and insufficient N source supply of traditional reaction devices are effectively overcome, and the crystal quality and uniformity are effectively improved.

Description

technical field [0001] The invention relates to a growth device and method for a nitride single crystal. Background technique [0002] As the main representative of the third-generation semiconductor materials, gallium nitride has excellent properties such as wide band gap, high withstand voltage, and high thermal conductivity, and has become a hot research topic. Compared with other methods, the growth conditions of the Na Flux method are milder (700-1000°C, 4-5MPa) and the crystal quality is better, making it the most potential method for preparing gallium nitride materials. Traditional sodium flow reaction kettles generally use integral heating reactors and single-channel nitrogen gas pipelines, which are not only prone to disordered convection, but also prone to polycrystals at the gas-liquid interface, which prevents N from entering the solution to fully participate in the reaction, resulting in slow crystal growth and Crystal quality is low. How to further improve ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38C30B7/14
Inventor 巫永鹏李成明陈蛟罗睿宏李顺峰张国义
Owner DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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