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Zinc selenide single crystal growing method and zinc selenide single crystal growing container

A growth method, zinc selenide technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of high cost, complex growth steps of zinc selenide single crystal, etc., achieve small stress, ensure single nucleus growth, The effect of reducing impurities

Inactive Publication Date: 2010-03-10
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the disadvantages of complex zinc selenide single crystal growth steps and high cost in the prior art, the present invention proposes a zinc selenide single crystal growth method and its growth container

Method used

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  • Zinc selenide single crystal growing method and zinc selenide single crystal growing container
  • Zinc selenide single crystal growing method and zinc selenide single crystal growing container
  • Zinc selenide single crystal growing method and zinc selenide single crystal growing container

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Embodiment 1

[0030] This embodiment prepares the zinc selenide single crystal that size is 12 * 10 * 8mm, uses the ampoule (such as figure 1 As shown), the ampoule is placed horizontally in the tube furnace, consisting of a Φ16×100mm quartz tubular body, which is divided into a growth area and a raw material area. The shape of the end of the growth zone is a cone, and the length of the cone is 25 mm. The centerline of the cone is coaxial with the centerline of the ampoule, called the central axis. On the cross-section passing through the central axis of the growth zone of the ampoule, the two elliptical arcs that constitute the cone intersect with a straight line that is 9mm away from the vertebral point on the axis, and the cone angle θ formed by the two tangents passing through this intersection is 25°; There is a ring-shaped quartz baffle in the zone, the diameter of the hole in the middle of the baffle is 6mm; the quartz baffle is perpendicular to the ampoule wall, 20mm away from the ...

Embodiment 2

[0047] This embodiment prepares a single crystal of zinc selenide with a size of 13×8×8mm, and uses an ampoule placed vertically to grow a single crystal of zinc selenide, such as figure 2 shown. The ampoule is vertically placed in the tube furnace. The ampoule is composed of a Φ16×150mm quartz tubular body, which is divided into a growth area and a raw material area. The end of the growth area is a cone with a length of 30mm. It passes through the ampoule growth area On the cross-section of the central axis, the two arcs forming the cone intersect at two points the straight line 10mm away from the vertebral point on the central axis, and the cone angle θ formed by the two tangents of the arc passing through these two points is 18°.

[0048] The technique of the present embodiment is according to the following steps successively:

[0049] 1. To clean the ampoules:

[0050] The cleaning process adopts a combination of comprehensive cleaning, strong hydrogen-oxygen flame baki...

Embodiment 3

[0064] This embodiment prepares a single crystal of zinc selenide with a size of 16×8×10mm, using an ampoule such as figure 2 As shown, the ampoule is vertically placed in the tube furnace. The ampoule is composed of a Φ20×120mm quartz tubular body, which is divided into a growth area and a raw material area. The end of the growth area is a cone, and the length of the cone is 25mm. In the ampoule On the cross-section of the growth zone passing through the central axis, the two arcs forming the cone intersect at two points with a straight line 12 mm away from the vertebral point on the central axis, and the cone angle θ formed by the tangent of the two points is 20°.

[0065] The technique of the present embodiment is according to the following steps successively:

[0066] 1. To clean the ampoules:

[0067] The cleaning process adopts a combination of comprehensive cleaning, strong hydrogen-oxygen flame baking and annealing, including:

[0068] (1) Comprehensive cleaning

...

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Abstract

The invention discloses a zinc selenide single crystal growing method and a zinc selenide single crystal growing container. The method uses zinc and selenium as raw materials and iodine as a vapour phase reaction promoter, and further completes the growth of a zinc selenide single crystal in an ampoule. The method sequentially comprises the following steps: comprehensively cleaning the ampoule, feeding the materials into the ampoule and evacuating the ampoule, sealing the ampoule, cleaning a growing area of the sealed ampoule with hot water, growing crystals, cooling the crystals, and the like. The ampoule has the basic structure that: a raw material area is easy to mix Zn and Se elementary substances; and the growing area consists of a conical body formed by the tangency of two sections of arcs on the cross section of a middle axis of the ampoule. The technical scheme adopted by the invention can grow zinc selenide single crystals of a diameter of 12 to 20mm, and also can be applied to the preparation of other II-VI group compound semiconductor crystals. The grown zinc selenide single crystals have the characteristics of integral structure, good uniformity, small stress, low cost,and simple process.

Description

1. Technical field [0001] The invention relates to the field of photoelectric materials, in particular to a zinc selenide single crystal growth method and a growth container thereof. 2. Background technology [0002] Zinc selenide (ZnSe) single crystal is a II-VI wide bandgap compound semiconductor material. Due to its excellent physical and chemical properties, it is widely used in blue light semiconductor light-emitting devices, nonlinear optoelectronic devices, nuclear radiation detection devices and near-ultraviolet-visible light detection devices. Devices have important application prospects. However, since zinc selenide has a high melting point of 1526°C, the vapor pressure of the two components is large at high temperature, the thermal conductivity of the crystal is low, and high-purity zinc selenide powder raw materials that meet the stoichiometric ratio must be used for growth. Therefore, the preparation of large Difficulties exist in single crystals of zinc seleni...

Claims

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Application Information

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IPC IPC(8): C30B29/48
Inventor 李焕勇介万奇
Owner NORTHWESTERN POLYTECHNICAL UNIV
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