To provide a method for efficiently producing a high quality
metal nitride containing a small amount of impurities, particularly
gallium nitride.A method for producing a
metal nitride characterized by employing a container made of a nonoxide material. By using a nonoxide for a material of a container to be in contact with a raw
metal or a metal nitride to be formed, reaction or adhesion of the raw metal or the metal nitride to be formed to the container can be avoided, and inclusion of
oxygen derived from the material of the container can be prevented, whereby a high quality metal nitride having high
crystallinity will be obtained. By securing a certain or larger supply amount and a certain or higher flow rate of the
nitrogen source gas, the raw metal can be converted into a nitride with an extremely high conversion, and a metal nitride having a small amount of an unreacted raw metal remaining and containing a metal and
nitrogen in a stoichiometric constant can be obtained with a high yield. The obtained metal nitride having a small amount of
oxygen included and containing a metal and
nitrogen in a stoichiometric constant, is very useful as a
raw material for
bulk crystal growth.