Method for growth of large size high quality zinc oxide single crystal thick film on sapphire

Abstract

The invention discloses a method for growing a zinc oxide single-crystal thick film with large size and high quality on a sapphire substrate, which comprises the steps of: 1) using zinc acetate, polyvinyl alcohol and deionized water to be prepared into a colloid solution; 2) soaking the sapphire substrate with clean surface in the deionized water for certain time; 3) using a photoresist spinner to evenly spread a layer of zinc acetate-polyvinyl alcohol colloid solution on a C plane of the sapphire substrate; 4) performing high-temperature annealing on the colloid solution after the colloid solution is dried; 5) using a wet method to etch the substrate annealed by the step 3, using the deionized water to rinse after the etching is finished, and spin-drying; and 6) using metal-source chemical vapor phase epitaxial growth technology (MVPE) to grow the zinc oxide single-crystal thick film on the spin-dried sapphire substrate. The method has the characteristics of simple process and equipment, low cost, high repeatability and so on.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, and relates to a method for growing a large-size high-quality ZnO single crystal thick film on a sapphire substrate. Background technique [0002] ZnO is a kind of II-VI group self-activated wide bandgap direct bandgap semiconductor material with wurtzite structure. At room temperature, the band gap of ZnO single crystal material is 3.37eV, and the exciton binding energy is 60meV, so it is suitable for making high-efficiency blue, blue-green, ultraviolet light-emitting and detectors and other optoelectronic devices. In 1997, Nature Magazine spoke highly of the application prospects of lasers made of ZnO in improving optical storage. The band-edge emission of ZnO is very suitable as an excitation light source material for white LEDs in the ultraviolet region, which highlights the important position of ZnO in semiconductor lighting engineering. In addition, ZnO single crystal also...

AI Technical Summary

Problems solved by technology

However, due to the high lattice mismatch and high thermal mismatch between ZnO and sapphire substrate, it is difficult to directly grow high-quality ZnO single crystal thick film on sapphire substrate by MVPE method.

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