50results about How to "Reduce growth defects" patented technology

There is disclosed a photovoltaic cell, such as a solar cell, incorporating one or more epitaxially grown layers of SiGe or another germanium material, substantially lattice matched to GaAs. A GaAs substrate used for growing the layers may be removed by a method which includes using a boundary between said GaAs and the germanium material as an etch stop.

In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment process is performed while stopping introducing the first gas and introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas. In the first heat treatment process, the silicon wafer is rapidly heated to first temperature of 1300° C. or higher and a melting point of silicon or lower at a first heating rate, and kept at the first temperature. In the second heat treatment process, the silicon wafer is kept at the first temperature, and rapidly cooled from the first temperature at a first cooling rate.

The invention discloses a semiconductor light emitting diode and a manufacturing method thereof. The method includes: forming a crystalline nitride semiconductor layer on a substrate; forming an amorphous layer and a crystalline nitride semiconductor layer on the nitride semiconductor layer; forming an n-type nitride semiconductor layer on the crystalline nitride semiconductor layer; forming an active layer on the compound semiconductor layer; and forming a p-type nitride semiconductor layer on the active layer.

The invention provides a semiconductor crystal growth device. It includes: a furnace body; a crucible, which is arranged inside the furnace body, to accommodate silicon melt; a lifting device, which is arranged on the top of the furnace body, to extract silicon melt from the silicon melt Pull out the silicon crystal rod; the guide tube, the guide tube is barrel-shaped and arranged vertically above the silicon melt in the furnace body; the pulling device pulls the silicon The crystal rod passes through the guide tube in the vertical direction; and the magnetic field applying device is used to apply a horizontal magnetic field to the silicon melt in the crucible; wherein, the bottom of the guide tube is provided with There is a downward protruding step, so that the distance between the bottom of the draft tube and the silicon melt surface in the direction of the magnetic field is smaller than the distance between the silicon melt surface and the direction perpendicular to the magnetic field. distance between body fluid surfaces. According to the semiconductor crystal growth apparatus of the present invention, the quality of semiconductor crystal growth is improved.

The present invention provides a silicon carbide crystal growth method and device, the method comprising: (1) assembly stage: (2) sublimation stage: controlling a plurality of partitions to rotate between the plurality of partitions and the inner wall of the partition and the cavity There is no gap between them, the first crucible is separated from the second crucible, and the silicon carbide raw material is heated to sublimate; (3) Crystal growth stage: control multiple partitions to rotate between multiple partitions and / or the inner wall of the partition and the cavity There is a gap between them, and the second crucible communicates with the first crucible through the gap, and the heating makes the silicon carbide raw material atmosphere pass through the gap to the seed crystal for crystal growth. By controlling the rotation of multiple partitions, the first crucible is separated from the second crucible, and the sublimated atmosphere of the silicon carbide raw material cannot be transmitted upwards, so as to avoid the formation of defects affecting the crystal quality and damage and pollution to the seed crystal caused by the unstable atmosphere in the early stage of growth. And the separator blocks the heat radiation from the raw material to the seed crystal, avoiding the sublimation of the seed crystal surface caused by the lack of silicon carbide atmosphere supplement during impurity removal.

The invention provides a semiconductor crystal growth device. The device comprises a furnace body; a crucible which is arranged in the furnace body and is used for accommodating a silicon melt; a lifting device which is arranged at the top of the furnace body and is used for lifting a silicon crystal bar out of the silicon melt; a flow guide cylinder which is in a barrel shape and is arranged above the silicon melt in the furnace body in the vertical direction, wherein the lifting device is adopted to lift the silicon crystal bar to penetrate through the flow guide cylinder in the vertical direction; and a magnetic field applying device which is used for applying a magnetic field in the horizontal direction to the silicon melt in the crucible; wherein in the process that the lifting devicelifts the silicon crystal bar to penetrate through the flow guide cylinder, the distance between the bottom of the flow guide cylinder in the direction of the magnetic field and the silicon crystal bar is larger than the distance between the bottom of the flow guide cylinder in the direction perpendicular to the magnetic field and the silicon crystal bar. According to the semiconductor crystal growth device provided by the invention, the growth quality of the semiconductor crystal is improved.