A semiconductor crystal growth device

Abstract

The invention provides a semiconductor crystal growth device. It includes: a furnace body; a crucible, which is arranged inside the furnace body, to accommodate silicon melt; a lifting device, which is arranged on the top of the furnace body, to extract silicon melt from the silicon melt Pull out the silicon crystal rod; the guide tube, the guide tube is barrel-shaped and arranged vertically above the silicon melt in the furnace body; the pulling device pulls the silicon The crystal rod passes through the guide tube in the vertical direction; and the magnetic field applying device is used to apply a horizontal magnetic field to the silicon melt in the crucible; wherein, the bottom of the guide tube is provided with There is a downward protruding step, so that the distance between the bottom of the draft tube and the silicon melt surface in the direction of the magnetic field is smaller than the distance between the silicon melt surface and the direction perpendicular to the magnetic field. distance between body fluid surfaces. According to the semiconductor crystal growth apparatus of the present invention, the quality of semiconductor crystal growth is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor crystal growth device. Background technique [0002] The Czochralski method (Cz) is an important method for preparing silicon single crystals for semiconductors and solar energy. The high-purity silicon material placed in the crucible is heated to melt it through a thermal field composed of carbon materials, and then the seed crystal is immersed in the In the melt and through a series of processes (seeding, shouldering, equal diameter, finishing, cooling), a single crystal rod is finally obtained. [0003] In the crystal growth of semiconductor single crystal silicon or solar single crystal silicon using the CZ method, the temperature distribution of the crystal and the melt directly affects the quality and growth rate of the crystal. During the growth of CZ crystal, due to the existence of thermal convection in the melt, the distribution of trace impur...

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Problems solved by technology

Because, in the semiconductor crystal growth process, the temperature below the interface between the semiconductor crystal and the melt presents periodic fluctuations with the change of the circumference angle, that is, the Gc of the temperature gradient (dT / dZ) of the crystal and the melt as the interface, Gm fluctuates, therefore, the crystallization speed PS of the crystal in the circumferential angle direction fluctuates periodically, which is not conducive to the control of crystal growth quality

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