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Semiconductor crystal growth device

A crystal growth and semiconductor technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as unfavorable crystal growth quality, achieve the effect of improving crystal pulling quality, reducing defects, and improving speed uniformity

Active Publication Date: 2020-12-18
ZING SEMICON CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because, in the semiconductor crystal growth process, the temperature below the cross-section of the semiconductor crystal and the melt fluctuates periodically with the change of the circumferential angle, that is, the Gc of the temperature gradient (

Method used

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  • Semiconductor crystal growth device
  • Semiconductor crystal growth device
  • Semiconductor crystal growth device

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Embodiment Construction

[0040]In the following description, a lot of specific details are given in order to provide a more thorough understanding of the present invention. However, it is obvious to those skilled in the art that the present invention can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are not described.

[0041]In order to thoroughly understand the present invention, a detailed description will be provided in the following description to illustrate the semiconductor crystal growth apparatus of the present invention. Obviously, the implementation of the present invention is not limited to the specific details familiar to those skilled in the semiconductor field. The preferred embodiments of the present invention are described in detail as follows. However, in addition to these detailed descriptions, the present invention may also have other embodiments.

[0042]It should be note...

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Abstract

The invention provides a semiconductor crystal growth device. The device comprises a furnace body; a crucible which is arranged in the furnace body and is used for accommodating a silicon melt; a lifting device which is arranged at the top of the furnace body and is used for lifting a silicon crystal bar out of the silicon melt; a flow guide cylinder which is in a barrel shape and is arranged in the furnace body in the vertical direction, wherein the lifting device is adopted to lift the silicon crystal bar to penetrate through the flow guide cylinder in the vertical direction; and a magneticfield applying device which is used for applying a magnetic field to the silicon melt in the crucible; wherein the distance between the bottom of the guide cylinder and the liquid level of the siliconmelt in the direction of the magnetic field is smaller than the distance between the bottom of the guide cylinder and the silicon melt in the direction perpendicular to the magnetic field. Accordingto the semiconductor crystal growth device disclosed by the invention, the uniformity of temperature distribution in the silicon melt is improved, and the growth quality of the semiconductor crystal is improved.

Description

Technical field[0001]The present invention relates to the field of semiconductor manufacturing, in particular to a semiconductor crystal growth device.Background technique[0002]The Czochralski method (Cz) is an important method for preparing silicon single crystals for semiconductors and solar energy. The high-purity silicon material put into the crucible is heated by a thermal field composed of carbon materials to melt it, and then the seed crystal is immersed in In the melt, a series of (seeding, shoulder setting, equal diameter, finishing, cooling) processes are carried out to obtain a single crystal rod.[0003]In the crystal growth of semiconductor single crystal silicon or solar single crystal silicon using the CZ method, the temperature distribution of the crystal and the melt directly affects the quality and growth rate of the crystal. During the growth of CZ crystals, due to the presence of thermal convection in the melt, the distribution of trace impurities is uneven, formin...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B29/06C30B30/04
CPCC30B15/00C30B29/06C30B30/04C30B15/14C30B15/305C30B15/30
Inventor 沈伟民王刚邓先亮黄瀚艺陈伟德
Owner ZING SEMICON CORP
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