163results about How to "Reduce flatness" patented technology

A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plane uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50% over the wavelength range of 400 to 700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5 to 4 mm and a transmittance of not less than 80% over the wavelength range of 600 to 700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.

The invention belongs to the technical field of methods for replacing rubber supports, and discloses a method for replacing a building shock insulation rubber support. The method is mainly technically characterized in that supporting force generated when temporary support bodies are arranged is the same as the design load of the building shock insulation rubber support, then the support is demounted, concrete on the top of a pier column is removed at the same time, a new shock insulation rubber support is jacked through force measurement jacks, the design load is reached, a pier top and pre-buried boards are connected, concrete is poured to the pier top and the pre-buried boards, and finally the temporary support bodies are demounted. By the adoption of the mode of combining column top descending with support jacking, space is provided for replacement of the support, stress evenness of supports for supporting a building is guaranteed, the situation that the structural stress changes due to the fact that one support does not bear force is avoided, needed jacking force of the jacks is small, replacement is quick and safe, and construction cost is low.

A lithographic projection apparatus includes a radiation system for providing a beam of radiation and a support structure for supporting a patterning device. The patterning device serves to pattern the beam according to a desired pattern. The lithographic projection apparatus includes a substrate table for holding a substrate and a projection system for projecting the patterned beam onto a target portion of the substrate. At least one holding structure includes at least one compliant member holding a pimple plate for holding a removable item for the apparatus.

A screen includes: the four arm members have first connection sections, one at each of the first and second support section side extremities, each of the first and second support sections includes at either extremity thereof a second connection section which receives the first connection section, an attachment and detachment of each of the arm members to and from the screen main body is carried out by an attachment and detachment of the first connection section to and from the second connection section, each of the four arm members has a third connection section at the support rod side extremity, the support rod has fourth connection sections which receive, one each, the four arm members, and an attachment and detachment of the arm members to and from the support rod is carried out by the third connection sections and fourth connection sections coming into engagement.

A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plane uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50% over the wavelength range of 400 to 700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5 to 4 mm and a transmittance of not less than 80% over the wavelength range of 600 to 700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.

The invention relates to a method for grinding zirconia ceramics, which comprises the following steps of: grinding the zirconia ceramics by using grinding liquid and a diamond grinding wheel for 4 minutes to 6 minutes; carrying out coarse grinding treatment on the zirconia ceramics for 5 minutes to 6 minutes by adopting boron nitride grinding liquid and a cast iron disc, carrying out medium grinding treatment on the zirconia ceramics for 20 minutes to 30 minutes by adopting a first diamond grinding liquid and a first copper disc, carrying out fine grinding treatment on the zirconia ceramics for 15 minutes to 25 minutes by adopting a second diamond grinding liquid and a second copper disc, and polishing the zirconia ceramics for 50 minutes to 70 minutes by adopting a polishing pad and a polishing solution. According to the method for grinding zirconia ceramics, grinding treatment is firstly carried out, then rough grinding treatment is carried out to reduce surface roughness and flatness, middle grinding treatment and fine grinding treatment are further carried out to reduce crack depth, surface roughness and flatness, so the processing difficulty during polishing treatment is reduced, the total processing time is less than 130 minutes, the processing time is obviously reduced, the processing efficiency is improved, and the yield of processed products is improved.

An apparatus and method for honing, sharpening or grinding a curved peripheral cutting surface of a slicer blade are provided. Included is the use of one of a set of interchangeable cams that generally follows the curved shape of the blade cutting surface, whether same has a constant radius or varying radii. The honing is accomplished off-line of the slicer equipment, and the movement of two honing or grinding wheels is closely controlled so as to provide honed or ground cutting edges which are of substantially uniform width throughout their respective peripheries. The two honing or grinding wheels operate independently of each other on opposing edges of the blade, a large blade load area is provided therebetween, precision gib adjustments are provided between the wheel and the cam follower, and a single tool is needed to make adjustments of the apparatus.

A screen reflects projection light for display. The screen has a screen base designed to be wound and including a first surface (front surface) and a second surface (rear surface) on the side opposite to the front surface. The front surface contains a display area that has a reflection film on which the projection light is reflected. The screen further has a flexible protection member which is disposed on the portion of the rear surface corresponding to the outside of the display area in the width direction of the display area, and extends through substantially the full length of the display area in the winding direction of the display area. The front surface is positioned outside when the screen base is wound.

The present invention is a method for polishing a silicon wafer, in which an oxide film is formed on a back surface side of the wafer, wherein the oxide film on a chamfered portion of the silicon wafer is removed, and the oxide film on a peripheral portion of the back surface of the wafer is polished over at least 2 mm from the outermost peripheral portion of the back surface of the wafer so that a thickness of the polished oxide film decreases from inside to outside of the wafer, a method for producing such a silicon wafer, and a silicon wafer. Thereby, there are provided a method for polishing a silicon wafer in which particles' attaching to a wafer surface after handling can be prevented, decrease of resistivity due to autodoping is not brought about, and moreover, productivity does not decrease; a method for producing such a silicon wafer; an apparatus for polishing a disk-shaped workpiece suitable for performing the methods; and a silicon wafer in which particles do not attach to a surface after handling even if an oxide film is formed on a back surface of the wafer and decrease of resistivity due to autodoping is not brought about.

The invention relates to a making method of piezoelectric composite materials. The making method of the piezoelectric composite materials comprises the following steps of bonding piezoelectric materials to a plate; cutting the piezoelectric materials bonded to the plate, wherein the depth of cutting cracks of the piezoelectric materials is less than the thickness of the piezoelectric materials; filling the cutting cracks of the piezoelectric materials with decoupling materials; using the plate as a standard, and grinding the upper surfaces of the solidified piezoelectric materials filled with the decoupling materials; then taking down the piezoelectric materials, and grinding the lower surfaces of the piezoelectric materials; and arranging electrodes on the surfaces of the ground piezoelectric materials, so as to obtain the piezoelectric composite materials. According to the making method disclosed by the invention, in the processing process, the situation that the piezoelectric materials are curved can be avoided, the right order and the regularity of the shape of microlite elements are effectively guaranteed, and reliable guarantee is provided for the consistency of plane array probes.

A ball grid array type semiconductor package includes a semiconductor chip formed with bonding pads, an elastomer bonded to the semiconductor chip, a flexible wiring substrate bonded to the elastomer and formed with wirings connected at one end of the bonding pads of the semiconductor chip, a solder resist formed on the main surface of the flexible wiring substrate and solder bump electrodes connected to the other ends of the wirings. The elastomer is bonded to the flexible wiring substrate on the side of the tape, the solder resist is formed on the side of the wirings, and the solder bump electrodes are connected with the wirings by way of through holes formed in the solder resist.

The invention relates to an integrated gasket, which is formed by connecting a plurality of gasket bodies in series, the upper end faces of the gasket bodies are on the same plane after the gasket bodies are connected in series, the side ends of two adjacent gasket bodies are fixedly connected through a locating connecting block, two side end faces connected in the two adjacent gasket bodies are tightly matched with each other, and each of the gasket bodies is internally provided with a cooling water way used for leading out the heat on the gasket bodies. The integrated gasket greatly reduces the processing difficulty and the processing cost caused by overlong integrated gaskets, and synchronously, the embedded cooling protection is adopted, and the cooling effect is increased.