3816results about "Lapping tools" patented technology

Polymer-based pads useful for polishing objects, particularly integrated circuits, having interconnected porosity which is uniform in all directions, and where the solid portion of said pad consists of a uniform continuously interconnected polymer material of greater than 50% of the gross volume of the article, are produced directly to final shape and dimension by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer and at a pressure in excess of 100 psi in a mold having the desired final pad dimensions. In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other. When pressure sintered at a temperature not to exceed the melting point of the lower melting powder, the increased stiffness afforded by incorporation of the higher melting polymer component gives improved mechanical strength to the sintered product. Conditions for producing the pads of this invention are such that the polymer powder particles from which the pads are produced essentially retain their original shape and are point bonded to form the pad.

A polishing pad is formed as a one-piece article having a region which is transparent and an adjacent region which is opaque. The article is formed by solidifying a flowable polymeric material which at least initially has a uniform composition. The flowable polymeric material is processed during a molding operation to provide the transparent region and the adjacent opaque region. Types of polymeric material suitable for making the polishing pad include a single thermoplastic material, a blend of thermoplastic materials, and a reactive thermosetting polymer.

This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance.

A polishing system includes a polishing tool having a platen, a polishing pad, and a controller. The platen is adapted to have the polishing pad attached thereto. The polishing pad includes a polishing surface and a back surface that is opposite the polishing surface. At least one sender electrode and at least one response electrode is disposed in the polishing pad. The controller is coupled to the polishing tool. A method includes polishing a conductive process layer of a wafer using a polishing pad of a polishing tool having at least one sender electrode and at least one response electrode disposed therein. A signal is provided to the at least one sender electrode. The signal provided to the at least one sender electrode is monitored with at least one of a group of the at least one response electrode, the at least one response electrode communicating with the at least one sender electrode through the conductive process layer of the wafer. Endpoint of the polishing process is determined based on the signal received by the at least one response electrode.

Aspects of the invention generally provide a method for polishing a material layer using electrochemical deposition techniques, electrochemical dissolution techniques, polishing techniques, and / or combinations thereof. In one aspect of the invention, the polishing method comprises applying a separate electrical bias, such as a voltage, to each of a plurality of zones of an electrode. Determining the separate biases comprises determining a time that at least one portion of the material layer is associated with each of the zones of the counter-electrode.

In a process for polishing the chamfered peripheral part of a wafer using a polishing cloth while supplying a polishing slurry in order to improve productivity of the process by reducing a polishing time, at least two steps of polishing processes are performed in sequence. The process comprises a first polishing process to polish a particular part, e.g. the part corresponding to the {110} plane of a peripheral part of the wafer and a second polishing process in which the whole part of a peripheral part of the wafer is polished for finishing by means of varying a hardness of the polishing clothes and / or a particle size of abrasives in the slurry such as the hardness of the polishing cloth in the second polishing process being softer than that of in the first polishing process and a particle size of abrasives in the slurry in the second polishing process being finer than that of in the first polishing process.

After a hole is formed in a polishing pad, a transparent window plate is inserted into the hole. Here, a gap is left between the upper surface of the transparent window plate and the outermost surface constituting the working surface of the polishing pad. During polishing, the polishing head holding the wafer applies a load to the polishing pad by means of a load-applying mechanism, so that the polishing pad and transparent window plate are compressed. In this case, the system is arranged so that the gap remains constant, and so that a dimension equal to or greater than a standard value is maintained. Since the upper surface of the transparent window plate is recessed from the upper surface of the polishing pad, there is no scratching of the surface of the transparent window plate during dressing. Accordingly, the polishing pad has a long useful life.

The present invention provides a chemical mechanical polishing pad comprising a polishing pad having a window formed therein and wherein the window is formed from a reaction of an aliphatic polyisocyanate, a hydroxyl-containing material and a curing agent.

The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior themo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads. In addition, these pads can be designed to tune the coefficient of friction by surface engineering, through the addition of solid lubricants, and creating low shear integral pads having multiple layers of polymeric material which form an interface parallel to the polishing surface. The pads can also have controlled porosity, embedded abrasive, novel grooves on the polishing surface, for slurry transport, which are produced in situ, and a transparent region for endpoint detection.

The polishing pad of this invention is a polishing pad effecting stable planarizing processing, at high polishing rate, materials requiring surface flatness at high level, such as a silicon wafer for semiconductor devices, a magnetic disk, an optical lens etc. This invention provides a polishing pad which can be subjected to surface processing to form a sheet or grooves, is excellent in thickness accuracy, attains a high polishing rate, achieves a uniform polishing rate, and also provides a polishing pad which is free of quality variations resulting from an individual variation, easily enables a change the surface patterns, enables fine surface pattern, is compatible with various materials to be polished, is free of burrs upon forming the pattern. This invention provides a polishing pad which can have abrasive grains mixed at very high density without using slurry, and generates few scratches by preventing aggregation of abrasive grains dispersed therein. The polishing pad of this invention has a polishing layer formed from a curing composition to be cured with energy rays, the polishing layer being formed surface pattern thereon by photolithography. The polishing pad of this invention comprises a polishing layer resin having abrasive grains dispersed therein, the resin containing ionic groups in the range of 20 to 1500 eq / ton.

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).

A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plane uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50% over the wavelength range of 400 to 700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5 to 4 mm and a transmittance of not less than 80% over the wavelength range of 600 to 700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.

A polishing body, e.g., pad (200, 230, 260, 300) or belt (400, 500) having a polishing layer (214, 404) that includes a backmixing region (202, 232, 262, 308, 416, 508) wherein backmixing can occur within a slurry (116) between a wafer (204, 234, 264, 304, 408), or other article, and the polishing layer under certain conditions. The polishing layer includes a first groove configuration (206, 236, 266, 312, 428, 504) within the backmixing region and a second grove configuration (208, 238, 268, 320, 432, 520) outside of the backmixing region that is different from the first groove configuration. The first groove configuration is designed based upon whether or not the presence of spent slurry within the backmixing region is detrimental or beneficial to polishing the wafer.

A polishing pad is formed by solidifying a flowable polymeric material at different rates of cooling to provide a polishing pad with a transparent region and an adjacent opaque region. Types of polymeric material suitable for making the polishing pad include a single thermoplastic material, a blend of thermoplastic materials, and a reactive thermosetting polymer.