The invention discloses a preparation method for a low-
dielectric-constant ordered porous
polyimide thin film. The method comprises the steps that amino-modified
silicon dioxide microspheres are prepared, then,
polyimide is grafted onto the surfaces of the amino-modified
silicon dioxide microspheres in the form of chemical bonds, a
polyimide compound thin film is prepared,
silicon dioxide is etched away in a
hydrofluoric acid etchant, washing and
drying are conducted, and then the low-
dielectric-constant ordered porous polyimide thin film is obtained. According to the method, air holes which have the hole diameters
ranging from 30 nm to 200 n, are uniform in size distribution and are uniformly distributed in the thin film are introduced into the polyimide thin film, the
dielectric constant of the polyimide thin film is lowered, and meanwhile due to the fact that the hole diameters are small, and distribution of the air holes inside the thin film is uniform, the polyimide thin film keeps the high
mechanical property and
breakdown voltage. The preparation method has the advantages of being low in dielectric constant, high in
breakdown voltage, good in
mechanical property and capable of lowering the
thermal expansion coefficient, and has potential application value and good application prospects in a high-frequency, high-speed and high-density
integrated circuit.