62results about How to "Easy parameter control" patented technology

The invention discloses an intelligent control system and method of a personal care beauty instrument. The method comprises the following steps that APP software of an intelligent terminal is in wireless connection with the care beauty instrument; use setting of the care beauty instrument is conducted through a visual operation interface of the APP software of the intelligent terminal; the care beauty instrument feeds back the current use information of a user and sends the current use information of the user into the APP software of the intelligent terminal to be analyzed; the software makes a corresponding beauty scheme according to the current use information of the user and feeds back the scheme onto a display screen of the intelligent terminal of the user; the user executes corresponding operation according to the beauty scheme on the display screen of the intelligent terminal. By means of the intelligent control system and method of the personal care beauty instrument, setting on the instrument is not needed when the beautify instrument is used, and personnel setting can be completed by directly relying on the APP software; by means of the setting, the function switching of the beauty instrument is facilitated, various parameters are accurately set, and thus the effect of a personal customization beauty mode of the user is achieved.

A handover parameter control apparatus in each cell of a cellular system having a condition in which if power received by a mobile terminal from a neighbor base station and power received from an access base station, to which the mobile terminal is connected, have power difference greater than or equal to a threshold, the mobile terminal executes handover from an access cell belonging to the access base station to a neighbor cell belonging to the neighbor base station. The apparatus includes a threshold control weight computation unit that computes a threshold control weight which indicates a threshold control direction so as to reduce handover failures, by using a frequency of first-type handover failure events which reduces by increasing the threshold; and a frequency of second-type handover failure events which reduces by decreasing the threshold; and a threshold determination unit that determines the threshold based on the threshold control weight.

The invention discloses a high concentration organic nitrogen waste water processing technology. The high concentration organic nitrogen waste water processing technology is mainly used for processingof organic waste water high in raw water total nitrogen, is capable of realizing high efficiency low consumption removing of carbon and nitrogen with a denitrification unit used for supplying a partof carbon sources, the total nitrogen, ammonia nitrogen, and chemical oxygen demand of discharged water are capable of reaching discharge standards. The high concentration organic nitrogen waste waterprocessing technology comprises following steps: high concentration organic nitrogen waste water is introduced into an anaerobic pond; water discharged from the anaerobic pond is introduced into a first sedimentation basin; a supernatant discharged from the first sedimentation basin is introduced into an anoxic pool, a part of bottom sludge from the first sedimentation basin is discharged, and the other part of bottom sludge from the first sedimentation basin is recycled back into the anaerobic pond; water discharged from the anoxic pool is introduced into a second sedimentation basin; a supernatant from the second sedimentation basin is introduced into an aerobic tank, and bottom sludge from the second sedimentation basin is discharged; water discharged from the aerobic tank is introduced into a third sedimentation basin; after precipitation in the third sedimentation basin, bottom sludge is discharged, and an obtained supernatant is recycled back into the anoxic pool; after anoxic pool reaction, obtained water is introduced into the second sedimentation basin, and then is introduced into the aerobic tank, and after reaction, water from the aerobic tank is introduced into the third sedimentation basin, and then is discharged.

The application discloses a preparation method of a surface-functionalized molybdenum carbide-carbon catalyst for a carbon dioxide hydrogenation reaction. The preparation method mainly comprises the following steps: firstly, using deionized water as a solvent, uniformly mixing sodium alginate with an ammonium molybdate solution, and then putting a mixed solution into a freeze drying oven for carrying out freeze drying; secondly, carrying out high-temperature roasting in an inert atmosphere to obtain porous graphite carbon-inlaid high-dispersibility molybdenum carbide; thirdly, mechanically lapping the prepared porous graphite carbon-inlaid high-dispersibility molybdenum carbide and urea, putting a lapped material into a muffle furnace, and carrying out annealing treatment to obtain the surface-functionalized molybdenum carbide-carbon catalyst. The catalyst prepared by the preparation method has the characteristics of large specific surface area, abundant pore structures and high dispersibility, and shows good catalytic activity and selectivity in the carbon dioxide hydrogenation reaction.

The invention discloses a preparation method for a high dispersibility Cu based cerium oxide composite catalyst. The preparation method mainly comprises the following steps that (1) a cerium nitrate solution and a 2-methylimidazole solution are prepared separately, the 2-methylimidazole solution is poured into the cerium nitrate solution in the stirring process, and stirring is stopped till the solutions are mixed uniformly; (2) centrifugal separation is conducted, and washing and drying are conducted to obtain a precursor; (3) the precursor obtained in the step (2) and copper salt are ground, methyl alcohol serves as a solvent and volatilizes gradually in the grinding process to form a high dispersibility Cu-based cerium oxide composite catalyst precursor, and the content of Cu in the composite catalyst precursor is, by mass, 0.5-20%; and (4) the composite catalyst precursor is calcined at the atmosphere of H2-Ar mixed gas, and the high dispersibility Cu based cerium oxide composite catalyst is obtained. The composite catalyst prepared through the preparation method has good heat stability, the large specific surface area and the plentiful pore structure, and the composite catalyst has the characteristic of high dispersibility.

The invention discloses a rotary low-temperature hydrogen isotope separation system and a separation method thereof, which solve the complicated construction, complicated parameter control, and high operation cost, or helium gas supply requirement, hydrogen and helium separation, and complex separation column regeneration treatment, or high cost of palladium displacement chromatogram filling material and easy failure in the prior art. The separation system includes a cryogenic tank, a reversing frame, a separation column, a raw material hydrogen-storage tank, a light isotope storage tank, a heavy isotope storage tank, a vacuum pump, and an exhaust gas storage tank. The separation method is characterized in that a separation column absorbing the raw material hydrogen to gradually separate the liquid nitrogen liquid level to desorb the hydrogen isotope to complete rearrangement of hydrogen isotope in other separation columns; and the light and heavy isotopes can be finally collected respectively from the far and near ends of the loop. The system creatively utilizes the technical principle of a simulated moving bed, the hydrogen isotope can continuously circulate in the closed loop separation loop, the heavy isotope concentration gradually decreases from the near end to the far end where the desorption occurs in the separation loop, and the concentration gradient of the heavy isotope is continuously increased with the adsorption / desorption frequency.

The invention relates to the field of green and safe processing and treating of foods, in particular to a quick peeling method of piper nigrum fruits through freezing. The quick peeling method comprises three steps of precooling, freezing and peeling. According to the peeling method, firstly fresh piper nigrum fruits are frozen, then the frozen piper nigrum fruits are stored, and the unfrozen piper nigrum fruits can be directly peeled through mechanical and electronic integration so that white piper nigrum fruits are prepared. The prepared white piper nigrum fruits are smooth in surfaces, mellow and full in granules, quietly-elegant in color, rich in fragrance and free from any peculiar smell, the fragrance of the white piper nigrum fruits is substantially elevated, the quality of the white piper nigrum fruits is excellent, and the quick peeling method is suitable for large-scale industrialized continuous production.

The invention discloses a method for detecting large-hole adsorbent resin organic matter residues in a desmodium styracifolium general flavone extractive with the headspace gas chromatography. The method is characterized in that a gaschromatograph allocated with an FID detecting instrument and a headspace sampling device are used; the chromatographic conditions are that a DB-1701 chromatographic column is adopted, the column flow rate ranges from 0.95 ml / min to 1.05 ml / min, the column temperature of the chromatographic column is characterized in that the initial temperature is 35 DEG C and is kept for 4 min, then the temperature rises with the rate ranging from 9 DEG C / min to 11 DEG C / min until the temperature is 90 DEG C, and finally the temperature rises with the rate ranging from 19 DEG C / min to 21 DEG C / min until the temperature is 230 DEG C; the temperature of the FID detecting instrument is 250 DEG C; the headspace parameters are that the holding temperature of a headspace bottle ranges from 138 DEG C to 142 DEG C, and the holding time of the headspace bottle ranges from 28 min to 32 min. The large-hole adsorbent resin organic matter residues are selected from at least one of normal hexane, benzene, toluene, dimethylbenzene, styrene and divinylbenzene. The method is simple, convenient, rapid, high in sensitivity, good in accuracy, high in specificity and good in reproducibility, and can be effectively used for detecting the residual quantity of large-hole adsorbent resin organic matter in the desmodium styracifolium general flavone extractive.

The invention discloses a Pd-MoS2 heterojunction photovoltaic solar cell device. The Pd-MoS2 heterojunction photovoltaic solar cell device is of a layered structure and sequentially comprises a Pd metal front electrode, a Pd-MoS2 thin film layer, a first SiO2 insulation buffer layer, a Si monocrystal substrate, a second SiO insulation buffer layer and a metal In back electrode from top to bottom. The preparation method mainly adopts a DC magnetron sputtering technique and comprises the following steps of: bombarding the surface of a Pd-MoS2 target with high-energy electrons so that a large amount of ions are sputtered; depositing a thin film on the surface of the Si monocrystal substrate subjected to passivation treatment; and preparing front electrode and back electrode layers and completing. The open-circuit voltage, the short-circuit current density and the light conversion efficiency of the Pd-MoS2 heterojunction photovoltaic solar cell device disclosed by the invention are respectively improved by over 60%, 160% and 300% compared with the similar products in the prior art. The Pd-MoS2 heterojunction photovoltaic solar cell device disclosed by the invention has the advantages of simplicity in process, greenness and environment protection on the production process and a product, high finished product rate and low manufacturing cost, and is suitable for industrial production at a large scale.

The invention discloses a magnetic nanowire array thin film and a preparation method thereof, and belongs to the technical field of electronic function materials. The magnetic nanowire array thin film comprises an MgAl2O4 monocrystal substrate, a Pb (Zr 0.52 Ti 0.48) O3 matrix and Ni Fe 2O4 nanowires, wherein the Ni Fe 2O4 nanowires are uniformly distributed in the Pb (Zr 0.52 Ti 0.48) O3 matrix to form the magnetic nanowire array thin film deposited on the MgAl2O4 monocrystal substrate (001) orientation surface. The thin film adopts the PZT-NFO target and (001) orientated MgAl2O4 monocrystal substrate, and is prepared by a 90-degree off-axis magnetron sputtering technology, so that the thin film has the characteristics of small ferromagnetic resonance line width and lattice mismatch, high ferromagnetic resonance frequency and capability of self-assembled epitaxial growth, and is an important material used for a microwave nonreciprocity device; and the preparation method is easy to implement, parameters are convenient to control, the structure is simple, and the cost is low.

A droplet ejection apparatus includes: a base; a plotting system having a droplet ejection head that ejects functional liquid as a droplet, a carriage that holds the droplet ejection head, and a stage that holds a work at which the droplet is plotted; and an optical system having a light source that outputs a laser beam and an optical path, which is constituted between the light source and the droplet and through which the laser beam passes to irradiate the droplet; wherein: the plotting system and the optical system are established on the base sharing the upper surface of the base as a reference surface, and pattern is plotted and fixed through cooperation control of both systems.

The first purpose of the invention lies in disclosing a growing method for a light-emitting composite layer, and the method comprises the steps: periodically growing 8-9 wafers, wherein each wafer sequentially comprises a first InxGa(1-x)N layer and a first GaN layer from the bottom to the top, wherein x=0.15-0.25. The second purpose of the invention lies in providing an LED epitaxial structure comprising the light-emitting composite layer. The light-emitting composite layer (a high-temperature quantum well structure) can achieve the absorption of lattice mismatch and dislocation at the bottom of an epitaxial layer and the relief of an internal stress, thereby reducing the lattice defects of a low-temperature quantum well, protecting the low-temperature quantum well to great extent, improving the crystal quality of a light-emitting region, and improving the anti-static capability of the LED epitaxial structure. Meanwhile, the structure employs a mode of low-temperature growing, can greatly reduce the separate-out of In, achieves the improvement of the confinement of carriers, increases the number of light-emitting quantum dots, facilitates the improvement of radiative recombination efficiency, and improves the light-emitting intensity.

Belonging to the field of sewage denitrification treatment, the invention discloses a membrane aerated biofilm micro-aerobic sludge bed process and a wastewater treatment method thereof. The membraneaerated biofilm micro-aerobic sludge bed process adopts a biofilm micro-aerobic sludge bed, a sludge bed water inlet pipe, a sludge bed water outlet pipe, a sludge discharge pipe, a biofilm aeration component, an air pump, a circulating pump, a peristaltic pump, air flow meters and pressure gauges. The treatment method realizes the mutualism and collaborative metabolism of aerobic bacteria, anaerobic bacteria and facultative anaerobes in a micro-aerobic environment, at the same time utilizes the efficient oxygen mass transfer efficiency of the membrane aeration component and enables wastewaterto flow on the outer surface of the biofilm to form back diffusion of oxygen and pollutants, and can realize effective removal of pollutants in a bioreactor. The process and the treatment method provided by the invention are suitable for denitrification treatment of urban sewage and industrial wastewater, and have the advantages of high treatment efficiency, high energy utilization rate, stable effluent effect, fast start-up speed, etc.

The invention discloses a MoS2 / Si heterojunction photovoltaic device with an ITO / Pd double-layer structured composite electrode. The device is of a composite layer layered structure, and sequentially comprises an ITO transparent conductive layer, a Pd metal layer, a MoS2 thin film layer, a Si single crystal substrate with the upper surface and the lower surface being provided with a SiO2 passivation layer and a metal In back electrode from top to bottom. The preparation method comprises the steps that the surfaces of different target materials are sequentially bombarded by using high-energy electrons through mainly adopting a DC magnetic control sputtering technology, a MoS2 target material is firstly bombarded, then a Pd target material is bombarded and finally an ITO target material is bombarded so as to sputter a large number of ions, and the ions are successively deposited at the surface of the Si single crystal substrate on which passivation processing is performed and superimposed into a multi-layer structured material; and a back electrode layer is prepared. The light conversion efficiency of the MoS2 / Si photovoltaic device with the ITO / Pd double-layer structured composite structure is improved over 100% compared with similar products in the prior art. The MoS2 / Si photovoltaic device is simple in process, simple and convenient to control, high in rate of finished products, low in manufacturing cost and suitable for industrial production.

The invention discloses a heating tool in a semiconductor encapsulating and routing process and a method thereof. A heating block of the heating tool is matched with an active refrigeration element and can heat a first region of an encapsulating carrier, and the refrigeration surface of the active refrigeration element can actively reduce the temperature of a second region of the encapsulating carrier to be relatively lower than the temperature of the first region so that the welding pad hardness of a chip in the second region can be kept at a suitable preset hardness value and favorably improve the bonding reliability and the bonding yield between leads and the welding pad.

A MoS2 / Ag / MoS2 semiconductor film material and a preparing method thereof are disclosed. The film has a layered structure, and includes a top MoS2 film layer, a Ag metal layer, a bottom MoS2 film layer and an intrinsic insulating Si substrate in order from top to bottom. According to the method, a DC magnetron sputtering technique is mainly adopted, and high-energy electrons are utilized to bombard different target material surfaces in order, wherein a MoS2 target material is firstly used to deposit the bottom MoS2 film layer on the Si substrate, then a metal Ag target material is utilized to deposit the Ag metal layer on the bottom MoS2 film layer, and the MoS2 target material is utilized finally to deposit the top MoS2 film layer on the Ag metal layer. Compared with pure MoS2 film products, the specific resistance of the MoS2 / Ag / MoS2 semiconductor film is reduced by 4 or more orders of magnitudes. According to the film material and the method, the process is simple, parameter control is simple and convenient, the yield is high, product quality stability and reliability are good, the manufacturing cost is low and the film material and the method are suitable for industrial production.

The invention discloses a Pd / MoS2 / SiO2 / Si / SiO2 / In multi-junction photo-detector and a preparation method thereof. The Pd / MoS2 / SiO2 / Si / SiO2 / In multi-junction photo-detector has a self-driving function, under irradiation of white light of 30mWcm<-2>, the density of optical excitation currents generated by the device reaches 5.3mAcm<-2>; under a monochromatic light condition of quite weak light intensity (1.0[mu]Wcm<-2>), the photo-detector still demonstrate photoresponse performance far higher than other devices of the same type; and when quite small bias positive voltages are applied to the device, under a pulse-type illumination condition, the direction of output currents can be rapidly alternatively changed from positive to negative, such that rapid binary-system photoresponse can be realized, and the detection precision of weak infrared optical signals is substantially improved. The photoresponse device provided by the invention has the advantages of rapid response speed, short recovery time, good periodicity, simple preparation technology, high yield and the like, thereby being suitable for large-scale industrial production.

The invention discloses a heating fixture of packaging lineup process and a method thereof, wherein the heating fixture comprises a carrier block and a clamping block; and the clamping block is used for clamping a packaging carrier, so that the packaging carrier is clamped between the carrier block and the clamping block. The clamping block is provided with at least one heating component used forheating a first region of the packaging carrier to a first temperature; and a second region of the packaging carrier has a second temperature, and the second temperature is relatively lower than the first temperature. Therefore, the heating fixture ensures that the hardness of a welding pad of a chip on the second region of the packaging carrier is maintained at a proper preset hardness value so as to improve the combination reliability and combination non-defective rate of a lead and the welding pad; and lineup positions on the first region are warmed, thus the lead is easy to joint.

The invention discloses a growth method for a current expansion layer. The growth method comprises a step of periodically growing 4-10 single pieces, wherein each single piece comprises a P type InGaN layer and an Si<x>Al<(1-x)>N layer or the Si<x>Al<(1-x)>N layer and the P type InGaN layer from the bottom up in sequence. The invention also discloses an LED epitaxial structure comprising the current expansion layer. By adoption of the current expansion layer, the rapid propagation of electrons from the N layer to the light emitting layer can be blocked by taking the high energy band of the GaN as the barrier; the longitudinally-propagated and relatively-crowded electrons can be transversely dispersed in a proper degree under the blocking of the energy band of the GaN; meanwhile, high-concentration two-dimensional electron gas is formed by the current expansion layer; the transverse mobility of the two-dimensional electron gas is quite high, so that the transverse expansion of the electrons is accelerated; the current is effectively expanded when the current passes through the current expansion layer macroscopically; and then the current distribution of the light emitting layer becomes uniform, so that the various kinds of performances of the LED are improved.

The invention relates to the field of semiconductor photoelectronic devices, and provides an ultra-wideband thin film photoelectric detector and a preparation method thereof, the thin film photoelectric detector is of a layered structure, and sequentially comprises a SiO2 quartz substrate, a GeTe semiconductor thin film layer and a metal Ag electrode layer from bottom to top; wherein the SiO2 quartz substrate is an electric insulation substrate; the GeTe semiconductor thin film layer is deposited on the surface of the SiO2 quartz substrate through direct-current magnetron sputtering, has a rhombic crystal structure, has (202) lattice orientation and has the thickness of 100-300nm; the metal Ag electrode layer is deposited on the surface of the GeTe semiconductor film layer through direct-current magnetron sputtering, and the thickness of the metal Ag electrode layer is 300-500 nm. According to the invention, by preparing a GeTe thin film with a rhombic crystal structure and forming anAg-GeTe-Ag device structure, high-efficiency conversion between light, heat and electricity is formed on the surface of the device, and a temperature gradient is generated in the device, so that the current in the device is changed, the response performance of the device to incident light is formed, and the photoelectric detection capability of the device in an ultra-wide wavelength range is realized.