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Ultra-wideband thin film photoelectric detector and preparation method thereof

A photodetector and ultra-wideband technology, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve problems such as the inability to realize photoelectric detection, achieve high yield, high response value, and improve the effect of photocurrent density

Active Publication Date: 2020-01-17
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, the optoelectronic devices disclosed above all have photoresponse functions to ultraviolet and visible light, and cannot realize photoelectric detection in the ultraviolet-visible-infrared ultra-wide band range.

Method used

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  • Ultra-wideband thin film photoelectric detector and preparation method thereof
  • Ultra-wideband thin film photoelectric detector and preparation method thereof
  • Ultra-wideband thin film photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] The preparation method is as follows:

[0073] (1) Select insulating SiO 2 Quartz substrate;

[0074] (2) SiO 2 The quartz substrate was ultrasonically cleaned in alcohol, acetone and deionized water for 60 seconds; after taking it out, it was blown dry with high-purity nitrogen;

[0075] (3) Rinse the above-mentioned SiO with deionized water and dry it with high-purity nitrogen 2 The quartz substrate is loaded into the tray and put into the vacuum chamber, and the vacuum chamber is evacuated to 5×10 -4 Pa, the SiO 2 The temperature of the quartz substrate was adjusted to the first temperature of 450°C, the pressure of the argon gas was adjusted to the first pressure of 1.0Pa, and the DC magnetron sputtering technology was used to bombard the GeTe target with ionized ions. 2 On the surface of the quartz substrate, a layer of 300nm GeTe film layer is deposited;

[0076] (4) After the deposition is completed, at 3×10 -4 Under Pa vacuum conditions, the sample temper...

Embodiment 2

[0081] The base heating temperature (first temperature) in embodiment 1 is 300 ℃;

[0082] All the other are the same as in Example 1.

[0083] After testing, the prepared Ag-GeTe-Ag photodetection device has no photodetection performance for incident light in any wavelength band.

Embodiment 3

[0085] The base heating temperature (first temperature) in embodiment 1 is 400 ℃;

[0086] All the other are the same as in Example 1.

[0087] After testing, the prepared Ag-GeTe-Ag photodetection device has weak light detection performance in the wavelength range of 404nm-10μm: when the wavelength λ=404nm, the responsivity is 0.1A / W; when λ=1550nm, The responsivity is 0.08A / W; when λ=10μm, the responsivity is 0.13A / W.

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Abstract

The invention relates to the field of semiconductor photoelectronic devices, and provides an ultra-wideband thin film photoelectric detector and a preparation method thereof, the thin film photoelectric detector is of a layered structure, and sequentially comprises a SiO2 quartz substrate, a GeTe semiconductor thin film layer and a metal Ag electrode layer from bottom to top; wherein the SiO2 quartz substrate is an electric insulation substrate; the GeTe semiconductor thin film layer is deposited on the surface of the SiO2 quartz substrate through direct-current magnetron sputtering, has a rhombic crystal structure, has (202) lattice orientation and has the thickness of 100-300nm; the metal Ag electrode layer is deposited on the surface of the GeTe semiconductor film layer through direct-current magnetron sputtering, and the thickness of the metal Ag electrode layer is 300-500 nm. According to the invention, by preparing a GeTe thin film with a rhombic crystal structure and forming anAg-GeTe-Ag device structure, high-efficiency conversion between light, heat and electricity is formed on the surface of the device, and a temperature gradient is generated in the device, so that the current in the device is changed, the response performance of the device to incident light is formed, and the photoelectric detection capability of the device in an ultra-wide wavelength range is realized.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to an ultra-wideband thin-film photodetection device and a preparation method thereof. Background technique [0002] In recent years, the development of photodetector devices with wide-band response has attracted extensive attention from many researchers at home and abroad. The main reason is that through the analysis and comparison of responses to different bands of light, signal interference from external conditions can be effectively avoided. Greatly improve the accuracy of device optical signal transmission and reception. [0003] In the prior art, due to the limitation of the semiconductor bandgap width, the existing various semiconductor photodetection devices generally have the problem and deficiency of narrow response range, such as ultraviolet light band, visible light band, near-infrared band and mid-infrared band. The band reduces the applicable range ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/101H01L31/0216H01L31/18
CPCH01L31/02167H01L31/101H01L31/18Y02P70/50
Inventor 郝兰众董世昌武玉鹏徐翰洋刘慧刘云杰韩治德薛庆忠
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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