37results about How to "Control component" patented technology

The invention provides an inclusion control method of an Si-Mn-killed non-oriented silicon steel, and belongs to the technical field of steel smelting. The non-oriented silicon steel comprises the following chemical components: not greater than 0.005% of C, 0.4-1.0% of Si, 0.20-0.80% of Mn, not greater than 0.04% of P, not greater than 0.005% of S, not greater than 0.005% of Als, and the balance Fe and inevitable impurities. The method comprises the processes of smelting through a converter, refining under RH and vacuum, and continuously casting; the slag amount of the steel from the converteris strictly controlled; lime, synthetic slag and calcium carbide are added to adjust the slag; the refining under HR and vacuum is that a deep decarbonization mode is carried out; after decarbonization, metallic aluminum is added to realize preliminary dexidation, and SiC is added to the ladle slag surface at the same time in order to deoxidize and modify the slag; the operation is circulated for1-3min; then low-carbon low-titanium ferrosilicon is added to realize Low carbon, low titanium ferrosilicon; the operation is circulated for 3-6min, then manganese metal, ferrophosphorus and the likeare added to alloy, and the net circulating time is beyond 8min after alloying. With the adoption of the method, the composition of nonmetal inclusions in the steel can be improved, so that the performances of the non-oriented silicon steel can be improved, and the foundation is supplied to develop high-performance non-oriented silicon steels.

The present invention provides a chemical vapor deposition device and method, comprising an outer cavity, a moving tray, an inner cavity, an exhaust cavity, a tray groove, a wafer loading area, a heating device, a gas supply pipeline, a first exhaust pipeline and The second exhaust pipe; the same or different reaction precursor gas or inert gas is passed into several independent inner cavities, and the capillary gap between the inner cavity and the upper surface of the tray is sealed, so that the pressure of the inner cavity is always higher than The pressure of the outer cavity; each inner cavity has independent air intake and exhaust, independent heating and cooling; by controlling the continuous or indexed rotation of the moving tray, the wafers on each wafer loading area on the upper surface of the moving tray can be received in turn The reactive precursors ejected from the nozzles in different inner cavities realize continuous chemical vapor deposition or periodic atomic layer deposition of thin films. The invention can isolate different reaction precursors, realize rapid heating and cooling temperature and gas switching, and help to improve the yield and productivity of semiconductor thin film growth.

The application discloses a preparation method of silicon carbide crystal, which belongs to the field of semiconductor material preparation. The method includes: providing a reaction chamber, a crystal growing chamber and a material removing mechanism, the reaction chamber includes a raw material chamber and a waste chamber, and the silicon carbide raw material is loaded into the raw material chamber; The raw material gas generated by the sublimation of the raw material in the chamber is transmitted to the crystal growth chamber through the gas phase transmission channel for crystal growth. When the sublimation rate of the silicon carbide raw material is the first sublimation rate, the material removal mechanism is activated, and the material removal mechanism is used to remove the reaction chamber. The waste generated after the sublimation of the inner raw material is transferred to the waste chamber, and the remaining raw material in the raw material chamber continues to sublime for crystal growth under the crystal growth conditions. Silicon carbide crystals. The present application can improve the sublimation rate and utilization rate of raw materials, and reduce crystal defects.