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Method for preparing copper zinc tin sulfide thin film on flexible substrate through magnetron sputtering method

A flexible substrate, magnetron sputtering technology, applied in the direction of climate sustainability, final product manufacturing, sustainable manufacturing/processing, etc., to achieve the effect of improving density, reducing secondary phases, and improving crystal quality

Active Publication Date: 2014-08-13
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing copper-zinc-tin-sulfur thin films on flexible substrates by magnetron sputtering of single metal targets in view of the existing problems in the preparation of copper-zinc-tin-sulfur thin films on flexible substrates

Method used

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  • Method for preparing copper zinc tin sulfide thin film on flexible substrate through magnetron sputtering method
  • Method for preparing copper zinc tin sulfide thin film on flexible substrate through magnetron sputtering method
  • Method for preparing copper zinc tin sulfide thin film on flexible substrate through magnetron sputtering method

Examples

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Effect test

Embodiment 1

[0027] Use flexible polyimide as the substrate material. After ultrasonic cleaning with acetone, ethanol and deionized water, dry N 2 Blow dry and put into a magnetron sputtering vacuum chamber. First evacuate the vacuum chamber to a background vacuum of 4×10 -4 Pa, then pass high-purity Ar as the working gas, the flow rate of Ar is 20ml / min, and the working pressure is 0.5Pa. The Cu target, Zn target and Sn target were pre-sputtered for 5 minutes to remove impurities on the surface of the target. Then proceed to the formal sputtering coating, first DC sputtering Zn, then radio frequency sputtering Sn, and finally DC sputtering Cu, the sputtering time of Zn, Sn, and Cu are 92 seconds, 2173 seconds and 221 seconds, respectively. It is 50W, 50W and 40W, so as to realize the deposition of Cu-Zn-Sn metal stack on the polyimide substrate as the precursor of the copper-zinc-tin-sulfur film. The precursor is then vulcanized. The vulcanization source material is solid sulfur powder wi...

Embodiment 2

[0029] Use flexible polyimide as the substrate material. After ultrasonic cleaning with acetone, ethanol and deionized water, dry N 2 Blow dry and put into a magnetron sputtering vacuum chamber. First evacuate the vacuum chamber to a background vacuum of 4×10 -4 Pa, then pass high-purity Ar as the working gas, the flow rate of Ar is 20ml / min, and the working pressure is 0.5Pa. The Cu target, Zn target and Sn target were pre-sputtered for 5 minutes to remove impurities on the surface of the target. Then proceed to the formal sputtering coating, first DC sputtering Zn, then radio frequency sputtering Sn, and finally DC sputtering Cu, the sputtering time of Zn, Sn, and Cu are 92 seconds, 2173 seconds and 221 seconds, respectively. It is 50W, 50W and 40W, so as to realize the deposition of Cu-Zn-Sn metal stack on the polyimide substrate as the precursor of the copper-zinc-tin-sulfur film. The precursor is then vulcanized. The vulcanization source material is solid sulfur powder wi...

Embodiment 3

[0031] The flexible molybdenum foil is used as the substrate material. After ultrasonic cleaning with acetone, ethanol and deionized water, dry N 2 Blow dry and put into a magnetron sputtering vacuum chamber. First evacuate the vacuum chamber to a background vacuum of 4×10 -4 Pa, then pass high-purity Ar as the working gas, the flow rate of Ar is 20ml / min, and the working pressure is 0.5Pa. The Cu target, Zn target and Sn target were pre-sputtered for 5 minutes to remove impurities on the surface of the target. Then proceed to the formal sputtering coating, first DC sputtering Zn, then radio frequency sputtering Sn, and finally DC sputtering Cu, the sputtering time of Zn, Sn, and Cu are 92 seconds, 2173 seconds and 221 seconds, respectively. It is 50W, 50W and 40W, so as to realize the deposition of Cu-Zn-Sn metal stack on the molybdenum foil substrate as the precursor of the copper-zinc-tin-sulfur film. The precursor is then vulcanized. The vulcanization source material is so...

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Abstract

The invention discloses a method for preparing a copper zinc tin sulfide thin film on a flexible substrate through a magnetron sputtering method. According to the method, magnetron sputtering is conducted on a metal Cu-Zn-Sn precursor on a flexible substrate material first, and then a sulfidizing method is used for preparing the copper zinc tin sulfide thin film. The method specifically includes the following steps that metal Cu, Zn and Sn targets are chosen as sputtering target materials; the flexible substrate material is cleaned; the magnetron sputtering method is used, and the metal Cu-Zn-Sn precursor is deposited on the flexible substrate; sulfidizing is conducted on the Cu-Zn-Sn precursor in a sulfur-containing atmosphere, so that the flexible substrate copper zinc tin sulfide thin film is obtained; the prepared flexible substrate copper zinc tin sulfide thin film has an excellent optical absorption property in a visible region. The method for preparing the copper zinc tin sulfide thin film on the flexible substrate through the magnetron sputtering method can be applied to different types of flexible substrate materials, and has the advantages of being capable of effectively adjusting the components of the thin film, improving the crystal quality of the thin film, being good in technological process repeatability and the like.

Description

Technical field [0001] The invention relates to the technical field of preparation of solar cell absorber layer materials, in particular to a method for preparing a copper-zinc-tin-sulfur thin film on a flexible substrate by using a magnetron sputtering method. Background technique [0002] In contemporary society, energy shortages and environmental pollution are key factors restricting the sustainable development of human society. Solar energy has the advantages of being safe, reliable, inexhaustible, and pollution-free during use. It is an ideal renewable energy source. Effective use of solar energy is one of the effective ways to solve the energy crisis and environmental pollution. Solar cells are devices that convert solar energy into electrical energy. Compared with traditional monocrystalline silicon and polycrystalline silicon solar cells, thin-film solar cells have the advantages of less raw materials and lower manufacturing costs. Among them, copper indium gallium selen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/02966H01L31/1828Y02P70/50
Inventor 许佳雄曹中明杨元政谢致薇陈先朝何玉定
Owner GUANGDONG UNIV OF TECH
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