Method for preparing copper-zinc-tin-sulfur thin film on flexible substrate by magnetron sputtering
A flexible substrate, magnetron sputtering technology, applied in the direction of climate sustainability, final product manufacturing, sustainable manufacturing/processing, etc., to achieve the effect of improving compactness, good repeatability, and improving crystal quality
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Embodiment 1
[0024] Using flexible polyimide as the substrate material, after ultrasonic cleaning with acetone, ethanol and deionized water, dry N 2 Blow dry and install into a magnetron sputtering vacuum chamber. First vacuum the vacuum chamber to a background vacuum of 4×10 -4 Pa, and then pass high-purity Ar as the working gas, the Ar flow rate is 20ml / min, and the working pressure is 0.5Pa. The Cu target, the Zn target and the Sn target are pre-sputtered for 5 minutes respectively to remove impurities on the target surface. Then carry out formal sputtering coating, first DC sputtering Zn, then RF sputtering Sn, and finally DC sputtering Cu, the sputtering times of Zn, Sn, and Cu were 92 seconds, 2173 seconds and 221 seconds respectively, and the sputtering powers were respectively 50W, 50W and 40W, so as to realize the deposition of Cu-Zn-Sn metal stack on the polyimide substrate as the precursor of copper-zinc-tin-sulfur thin film. Carry out vulcanization treatment to precursor aga...
Embodiment 2
[0026] Using flexible polyimide as the substrate material, after ultrasonic cleaning with acetone, ethanol and deionized water, dry N 2 Blow dry and install into a magnetron sputtering vacuum chamber. First vacuum the vacuum chamber to a background vacuum of 4×10 -4 Pa, and then pass high-purity Ar as the working gas, the Ar flow rate is 20ml / min, and the working pressure is 0.5Pa. The Cu target, the Zn target and the Sn target are pre-sputtered for 5 minutes respectively to remove impurities on the target surface. Then carry out formal sputtering coating, first DC sputtering Zn, then RF sputtering Sn, and finally DC sputtering Cu, the sputtering times of Zn, Sn, and Cu were 92 seconds, 2173 seconds and 221 seconds respectively, and the sputtering powers were respectively 50W, 50W and 40W, so as to realize the deposition of Cu-Zn-Sn metal stack on the polyimide substrate as the precursor of copper-zinc-tin-sulfur thin film. Carry out vulcanization treatment to precursor aga...
Embodiment 3
[0028] Using flexible molybdenum foil as the substrate material, after ultrasonic cleaning with acetone, ethanol and deionized water, dry N 2 Blow dry and install into a magnetron sputtering vacuum chamber. First vacuum the vacuum chamber to a background vacuum of 4×10 -4Pa, and then pass high-purity Ar as the working gas, the Ar flow rate is 20ml / min, and the working pressure is 0.5Pa. The Cu target, the Zn target and the Sn target are pre-sputtered for 5 minutes respectively to remove impurities on the target surface. Then carry out formal sputtering coating, first DC sputtering Zn, then RF sputtering Sn, and finally DC sputtering Cu, the sputtering times of Zn, Sn, and Cu were 92 seconds, 2173 seconds and 221 seconds respectively, and the sputtering powers were respectively 50W, 50W and 40W, so as to realize the deposition of Cu-Zn-Sn metal stack on the molybdenum foil substrate as the precursor of copper-zinc-tin-sulfur thin film. Carry out vulcanization treatment to pr...
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