The invention relates to a novel
crystalline silicon cell in the field of a photovoltaic technology, and specifically relates to a full back side contact
crystalline silicon cell which is prepared through combination with an
ion implantation technology, and also relates to a preparation method of the
cell. The full back side contact
crystalline silicon cell comprises a
silicon chip substrate, an anti-reflection layer, a base
electrode, an emitter
electrode, a
metal gate line and the like. The emitter
electrode and the base electrode of the full back side contact crystalline
silicon cell are not disposed in the same plane, so that electrons and cavities can be considered to move to the emitter electrode and the base electrode through a quire short path, and carrier bulk recombination in the cell can be reduced; through moving the emitter electrode and the
metal grate line from a front surface, i.e., a light receiving surface to a back surface, the optical loss is reduced; the emitter electrode is obtained through an
ion implantation method, and the process steps are reduced compared to a conventional thermal
diffusion doping method; and the front surface and the back surface are each provided with a
passivation layer, and the front surface is further provided with a front
surface field (FSF), so that the carrier surface recombination can be reduced, and the invention finally provides a
solar cell which has the advantages of high
batch production efficiency and simple technology.