The invention discloses an inverted structure of an III conductor light-emitting device. The inverted structure comprises a substrate, a buffer layer, an N-type nitride semiconductor layer, an active layer, a P-type nitride semiconductor layer, a transparent conductive layer, a first insulating layer structure, P-type contact metal, N-type contact metal, a second insulating layer structure, an inverted P-type electrode and an inverted N-type electrode. The substrate, the buffer layer, the N-type nitride semiconductor layer, the active layer and the P-type nitride semiconductor layer arranged in order from top to bottom form a linear raised top. The linear raised top replaces the prior multiple vias; the first insulating layer structure, using a Bragg reflector layer-metal layer-single oxide insulating layer or a Bragg reflector layer-metal layer-multiple oxide insulating layers as a reflector structure and insulating layer, replaces the inverted reflector structure and first insulating layer; a metal protective layer can be omitted.